LX5503LQ

LX5503 TM ® InGaP HBT 5-6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 5.15-5.85GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~100mA P1dB ~ +25dBm across 5.15~5.85GHz Power Gain ~ 22dB at 5.25GHz & Pout=18dBm Power Gain ~ 18dB at 5.85GHz & Pout=18dBm Total Current < 200mA for Pout=18dBm EVM ~ 4% for 64QAM/ 54Mbps & Pout=18dBm Excellent Temperature Performance Simple Input/Output Match Minimal External Components 2 Small Footprint: 3x3mm Low Profile: 0.9mm APPLICATIONS/BENEFITS The LX5503 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band and HiperLAN2 applications in the 5.15-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output prematching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with +25dBm of P1dB and 22dB power gain between 5.15-5.35GHz and 18dB gain up to 5.85GHz. For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very low EVM (Error-Vector Magnitude) of 4%, and consumes less than 200mA total DC current. The LX5503 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5503 an ideal solution for broadband, medium-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications. WWW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FCC U-NII Wireless IEEE 802.11a HiperLAN2 PRODUCT HIGHLIGHT PACKAGE ORDER INFO LX5503 LX5503 LQ Plastic 16-Pin LX5503LQ RoHS Compliant / Pb-free Transition DC: 0418 Note: Available in Tape & Reel (3K parts per reel). Append the letters “TR” to the part number. (i.e. LX5503LQ-TR) This device is classified as ESD Level 1 in accordance with MILSTD-883, Method 3015 (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright © 2000 Rev. 1.2d, 8/18/2005 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5503 TM ® InGaP HBT 5-6GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT WWW . Microsemi . C OM DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................500mA Total Power Dissipation...................................................................................3 W RF Input Power........................................................................................... 10dBm Operation Ambient Temperature ....................................................... -40 to +85oC Storage Temperature........................................................................ -65 to +150oC Peak Package Solder Reflow Temp (40 seconds maximum exposure) .......... 260°C (+0,-5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. 13 14 15 16 12 11 10 9 8 7 6 5 1 2 3 4 LQ PACKAGE (Bottom View) RoHS / Pb-free 100% Matte Tin Lead Finish FUNCTIONAL PIN DESCRIPTION Pin Name RF IN Vb1 Vb2 Pin Number 2, 3 6 7 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. For 5.15-5.35GHz this pin is pre-matched to 50Ω. Bias current control voltage for the first stage. Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge(R1/R2). Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 1 μF bypass capacitor as close to the device as possible. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1μF bypass capacitor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc). Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1 μF bypass capacitor at the supply side. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage (referred to as Vc). The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. Vcc RF OUT 9 10, 11 Vc1 15 PACKAGE DATA PACKAGE DATA Vc2 14 GND Copyright © 2000 Rev. 1.2d, 8/18/2005 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5503 TM ® InGaP HBT 5-6GHz Power Amplifier P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS Test conditions: Vcc=3.3V, Vref=2.86V, Icq=100mA, TA=25°C. Parameter Frequency Range Output Power at 1dB Compression Power Gain at Pout=18dBm EVM at Pout=18dBm Total Current at Pout=18dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Noise Figure Ramp-On Time Condition Symbol f Pout Gp 64QAM/54Mbps WWW . Microsemi . C OM Min. 5.15 24 20 Typ. 25 22 4 200 100 1.6 21 +/-0.2 +/-1 -15 -9 -40 -45 -37 6 100 Max. 5.35 Min. 5.7 24 16 Typ. 25 18 4 180 100 1.6 17 +/-0.5 +/-1 Max. 5.85 Unit GHz dBm dB % mA mA mA dB dB dB For Icq=100mA Over 100MHz -40 to +85 C o Ic_total Icq Iref S21 ΔS21 ΔS21 S11 S22 S12 -10 Pout = 18dBm Pout = 18dBm NF 10~90% tON Note: All measured data was obtained on a 5 mil GETEK evaluation board without heat sink. -12 -10 -40 -42 -37 6 100 -10 dB dB dB dBc dBc dB ns ELECTRICALS ELECTRICALS Copyright © 2000 Rev. 1.2d, 8/18/2005 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5503 TM ® InGaP HBT 5-6GHz Power Amplifier P RODUCTION D ATA S HEET CHARTS WWW . Microsemi . C OM Typical Power Sweep Data at Room Temperature (Vc=3.3V, Vref=2.86V, Icq=100mA) 30 25 20 15 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10 Pout Gain Freq.=5.15GHz -8 -6 -4 -2 0 2 4 6 Pin (dBm) 30 25 20 15 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10 30 25 20 15 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 Pout Gain Pout Gain Freq.=5.25GHz -8 -6 -4 -2 0 2 4 6 Pin (dBm) Freq.=5.85GHz CHARTS CHARTS 0 2 4 6 8 10 12 Pin (dBm) Copyright © 2000 Rev. 1.2d, 8/18/2005 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5503 TM ® InGaP HBT 5-6GHz Power Amplifier P RODUCTION D ATA S HEET CHARTS WWW . Microsemi . C OM Typical EVM & Total Current vs. Output Power (Vc=3.3V, Vref=2.86V, Icq=100mA, 64QAM/54Mbps) 8 7 6 5 4 3 2 1 0 12 13 14 15 16 17 18 19 20 21 100 150 200 EVM_in EVM_out Ictotal 300 250 Freq.=5.15GHz Pout (dBm) 8 7 6 5 4 3 2 1 0 12 8 7 6 5 4 3 2 1 150 200 EVM_in EVM_out Ictotal 300 EVM_in EVM_out Ictotal 250 200 Freq.=5.25GHz 150 100 13 14 15 16 17 18 19 20 21 300 Pout (dBm) 250 Freq.=5.85GHz CHARTS CHARTS 0 9 10 11 12 13 14 15 16 17 18 19 20 100 Pout (dBm) Copyright © 2000 Rev. 1.2d, 8/18/2005 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5503 TM ® InGaP HBT 5-6GHz Power Amplifier P RODUCTION D ATA S HEET CHARTS WWW . Microsemi . C OM Typical S-Parameter Data at Room Temperature 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Vc=3.3V Vref=2.81V Icq=80mA Frequency, GHz 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Vc=3.3V Vref=2.86V Icq=100mA Frequency, GHz 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Vc=3.3V Vref=2.98V Icq=160mA CHARTS CHARTS Frequency, GHz Copyright © 2000 Rev. 1.2d, 8/18/2005 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5503 TM ® InGaP HBT 5-6GHz Power Amplifier P RODUCTION D ATA S HEET CHARTS WWW . Microsemi . C OM Quiescent Current vs. Vref (VC1=VC2=VCC=Vc=3.3V) 250 225 200 175 150 125 100 75 50 2.75 2.8 2.85 2.9 2.95 3 3.05 Vref (V) Power Down Isolation (Vc=3.3V, Vref=0 to 1V, Icq