LX5510-LQ

C ONFIDENTIAL LX5510 INTEGRATED PRODUCTS InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~65mA Power Gain ~20dB @ 2.45GHz and Pout = 19dBm Total Current 120mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3x3mm2) Low Profile (0.9mm) APPLICATIONS The LX5510 is a power amplifier optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V 20dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 120mA total DC current with the nominal 3.3V bias. With increased bias of 4.5V EVM is ~ 5% at 23dBm. The LX5510 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5510 an ideal solution for medium-gain power amplifier requirements for IEEE 802.11b/g applications W WW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO LX5510 LX5510 Plastic MLPQ LQ 16 pin LX5510-LQ Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. LX5510-LQT) Copyright  2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 C ONFIDENTIAL LX5510 INTEGRATED PRODUCTS InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power........................................................................................... 15dBm Maximum Junction Temperature (TJ max) .................................................. 150°C Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-60°C to +150°C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. x denotes respective pin designator 1, 2, or 3 W WW . Microsemi . C OM GND VC2 RF OUT RF OUT GND 12 11 10 9 8 13 14 15 16 * Pad is Ground LQ PACKAGE (Bottom View) GND VC1 7 6 VCC * 1 2 3 4 5 GND RF IN RF IN GND VB1 VB2 GND GND FUNCTIONAL PIN DESCRIPTION Name RF IN VB1 VB2 VCC RF OUT VC1 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. Bias current control voltage for the first stage. Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge. Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF output for the power amplifier. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 4pF bypass capacitor 50mil apart from the device, followed by a 8.2nH blocking inductor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc). Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2nH AC blocking inductor and 1uF bypass capacitor. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage (referred to as Vc). The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. PACKAGE DATA PACKAGE DATA VC2 GND Copyright  2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 C ONFIDENTIAL LX5510 INTEGRATED PRODUCTS InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ TA otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25°C Parameter Frequency Range Power Gain at Pout = 19dBm EVM at Pout = 19dBm Total Current at Pout = 19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Noise Figure Ramp-On Time NF tON 10 ~ 90% Ictotal Icq Iref S21 ∆S21 ∆S21 S11 S22 S12 Pout = 19dBm Pout = 19dbm Over 100MHz -40°C to +85°C For Icq = 65mA Symbol f Gp 64QAM / 54Mbps Test Conditions ELECTRICAL CHARACTERISTICS ≤ 70°C except where W WW . Microsemi . C OM Min 2.4 LX5510 Typ 20 3.0 120 65 1.2 20 ±0.5 TBD 10 10 -40 -60 -50 TBD Max 2.5 Units GHz dB % mA mA mA dB dB dB dB dB dB dBc dBc dB 100 ns Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink. ELECTRICALS ELECTRICALS Copyright  2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 C ONFIDENTIAL LX5510 INTEGRATED PRODUCTS InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET S PARAMETER (3.3V) m1 freq=2.400GHz dB(S (2,1))=19.788 40 POWER SWEEP m2 freq=2.450GHz dB(S (2,1))=19.421 m1 m2 m7 m7 freq=2.500GHz dB(S (2,1))=18.846 W WW . Microsemi . C OM dB(S (2,1)) dB(S (1,1)) dB(S (2,2)) dB(S (1,2)) 30 20 10 0 -10 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 Fre quency GHz Figure 1 – S-Parameter Data (VC = 3.3V, VREF = 2.85V, Icq = 65mA) EVM DATA EVM_PA_ONLY 8 7 6 5 CURRENT_3.3V 180 170 160 Figure 2 – Power Sweep (Vc = 3.3V, Vref = 2.85V, Icq = 65mA) ACP DATA ACP_30MHz -40 -42.5 -45 Current (mA) EVM (%) ACP (dBc) 150 140 130 120 110 100 17 18 19 Output Power (dBm) 20 21 4 3 2 1 0 -47.5 -50 -52.5 -55 17 18 19 Output Power (dBm) 20 21 Figure 3 – EVM Data with 54Mbps 64QAM OFDM (Vc = 3.3V, Vref = 2.85V, Icq = 65mA, Frequency = 2.45GHz) CCK SPECTRUM Figure 4 – ACP Data with 54Mbps 64QAM OFDM (VC = 3.3V, Vref = 2.85V, Icq = 65mA, Frequency = 2.45GHz) S PARAMETER (4.5V) m1 freq=2.400GHz S21 (dB)=20.041 40 m2 freq=2.450GHz S21 (dB)=19.710 m1 m2 m7 m7 freq=2.500GHz S21 (dB)=19.143 dB(S (2,1)) dB(S (1,1)) 30 20 10 GRAPHS GRAPHS 0 -10 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 dB(S (2,2)) dB(S (1,2)) Figure 5 – Spectrum with 23dBm 11Mb/s CCK (Vc = 3.3V, Vref =2.85V, Icq = 65mA, Ic = 180mA, Freq = 2.45GHz) Copyright  2003 Rev. 0.3g, 2003-05-08 fre quency (GHz) Figure 6 – S-Parameter Data (Vc = 4.5V, Vref = 2.85V, Icq = 65mA) Page 4 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 C ONFIDENTIAL LX5510 INTEGRATED PRODUCTS InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET POWER SWEEP 8 7 6 5 EVM (%) EVM DATA EVM_PA_ONLY CURRENT_4.5V 180 170 160 150 140 130 120 110 100 17 18 19 20 21 22 23 24 Output Power (dBm) W WW . Microsemi . C OM 4 3 2 1 0 Figure 7 – Power Sweep (Vc = 4.5V, Vref = 2.85V, Icq = 65mA) ACP DATA ACP_30MHz -45 -47.5 -50 ACP (dBc) Figure 8 – EVM Data with 54Mbps 64QAM OFDM (Vc = 4.5V, Vref = 2.85V, Icq =65mA, Frequency =2.45GHz) CCK SPECTRUM -52.5 -55 -57.5 -60 17 18 19 20 21 22 23 24 Output Power (dBm) Figure 9 – ACP Data with 54Mbps 64QAM OFDM (Vc = 4.5V, Vref = 2.85V, Icq = 65mA, Frequency = 2.45GHz) Figure 10 – Spectrum with 23dBm 11Mb/s CCK (Vc = 4.5V, Vref = 2.85V, Icq = 65mA, Ic = 180mA, Freq = 2.45GHz) Current (mA) GRAPHS GRAPHS Copyright  2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 C ONFIDENTIAL LX5510 INTEGRATED PRODUCTS InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET PACKAGE DIMENSIONS W WW . Microsemi . C OM LQ 16-Pin MLPQ Plastic (3x3mm EP) D b E D2 E2 e A1 A3 A K L Dim A A1 A3 b D E e D2 E2 K L MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.18 0.30 0.18 0.30 3.00 BSC 3.00 BSC 0.5 BSC 1.50 1.80 1.50 1.80 0.2 0.35 0.45 INCHES MIN MAX 0.031 0.039 0 0.002 0.007 0.012 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS MECHANICALS Copyright  2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 C ONFIDENTIAL LX5510 INTEGRATED PRODUCTS InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET NOTES W WW . Microsemi . C OM N NOTES PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production data, and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright  2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8