LX5510LQ

LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~65mA Power Gain ~20dB @ 2.45GHz and Pout = 19dBm Total Current 125mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) APPLICATIONS The LX5510 is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V 20 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias. With increased bias of 5 V EVM is ~ 4% at 23 dBm. The LX5510 is available in a 16-pin 3mmx3mm micro-lead quad package (MLPQ). The compact footprint, low profile, and excellent thermal capability of the MLPQ package makes the LX5510 an ideal solution for mediumgain power amplifier requirements for IEEE 802.11b/g applications W WW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO LQ Plastic MLPQ 16 pin RoHS Compliant / Pb-free Transition DC: 0418 LX5510 LX5510 LX5510LQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5510LQ-TR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT W WW . Microsemi . C OM DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power........................................................................................... 15dBm Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-65°C to +150°C Peak Package Solder Reflow Temp. (40 seconds maximum exposure) ........ 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. x denotes respective pin designator 1, 2, or 3 VCC N/C VC1 N/C VC2 RF OUT RF OUT N/C 13 14 15 16 12 11 1 0 9 8 7 6 5 * 1 2 3 4 N/C RF IN RF IN N/C VB1 VB2 N/C * Pad is Ground N/C THERMAL DATA LQ PACKAGE (Bottom View) LQ Plastic MLPQ 16-Pin 10°C/W 50°C/W N/C = No connect RoHS / Pb-free 100% Matte Tin Lead Finish THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA FUNCTIONAL PIN DESCRIPTION Name RF IN VB1 VB2 VCC RF OUT VC1 VC2 GND Description RF input. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. Bias current control voltage for the first stage. Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge. Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF output. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 3.3 pF bypass capacitor, followed by a 8.2 nH blocking inductor at the supply side. Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2 nH AC blocking inductor and 1 uF bypass capacitor. The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. P D PACKAGE DATA Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS Test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25°C, unless otherwise specified Parameter SECTION HEADER Frequency Range Power Gain at Pout = 19dBm EVM at Pout = 19dBm Total Current at Pout = 19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Total Current at Pout=23dBm 2 side lobe at 23 dBm Ramp-On Time tON nd W WW . Microsemi . C OM Symbol Test Conditions Min 2.4 LX5510 Typ Max 2.5 Units f Gp 64GQAM / 54Mbps Ic_total Icq Iref S21 ΔS21 ΔS21 S11 S22 S12 Pout = 19dBm Pout = 19dbm 11 Mbps CCK 11 Mbps CCK 10 ~ 90% Over 100MHz 0°C to +70°C For Icq = 65mA GHz dB % mA mA mA dB dB dB dB dB dB dBc dBc mA dBc 20 3.0 125 65 1.2 20 1 1 10 10 -40 -55 -55 180 -52 100 ns Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink. E ELECTRICALS Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET 40 30 20 3.3V S PARAMETER DATA m1 m7 freq=2.400GHz freq=2.500GHz dB(S(2,1))=20.526 dB(S(2,1))=19.355 3.3V POWER SWEEP output power 30 25 Power /dBm, Gain /dB gain current 400 350 300 Current /mA W WW . Microsemi . C OM m1 m7 20 15 10 5 0 -5 dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) 10 0 -10 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 250 200 150 100 50 0 -25 -20 -15 -10 -5 0 5 10 Output Power / dBm -10 freq, GHz Figure 1 (VC = 3.3V, VREF = 2.85V, Icq = 65mA) Figure 2 (Vc = 3.3V, Vref = 2.85V, Icq = 65mA, frequency=2.45 GHz, P1dB=25 dBm) 3.3V EVM DATA 2.4 GHz 10 9 8 ACP_30 MHz /[dBc] -47.5 3.3V ACP DATA 2.4 GHz -45 2.45 GHz 2.5 GHZ 2.45 GHz 2.5 GHz 7 EVM_PA /[% ] 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] -50 -52.5 -55 -57.5 -60 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] Figure 3 – EVM Data with 54Mb/s 64 QAM OFDM (Vc = 3.3V, Vref = 2.85V, Icq = 65mA) Figure 4 – ACP Data with 54MB/s 64 QAM OFDM (VC = 3.3V, Vref = 2.85V, Icq = 65mA) 3.3V SPECTRUM WITH 23DBM 5V S PARAMETER m1 freq=2.400GHz dB(S(2,1))=21.036 40 30 20 DATA m7 freq=2.500GHz dB(S(2,1))=20.043 m1 m7 dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) 10 0 -10 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 GRAPHS GRAPHS freq, GHz Figure 5 – Spectrum with 23dBm 11Mb/s CCK (Vc = 3.3V, Vref =2.85V, Icq = 65mA, Ic = 171mA) Figure 6 – S-Parameter Data (Vc = 5V, Vref = 2.85V, Icq = 80mA) Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET 5V POWER SWEEP 6 5V EVM DATA WITH 54MB/S W WW . Microsemi . C OM 2.4 GHz 2.45 GHz 2.5 GHz 5 4 EVM_PA /[%] 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm] Figure 7 – Power Sweep (Vc = 5V, Vref = 2.85V, Icq = 80mA, frequency=2.45 GHz, P1dB=29 dBm) Figure 8 – EVM Data with 54Mb/s 64QAM OFDM (Vc = 5V, Vref = 2.85V, Icq =80mA,) 5V ACP DATA WITH 54MB/S 2.4 GHz -45 2.45 GHz 2.5 GHZ 5V SPECTRUM WITH 25DMB -47.5 ACP_30 MHz /[dBc] -50 -52.5 -55 -57.5 -60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm] Figure 9 – ACP Data with 54Mb/s 64 QAM OFDM (Vc = 5V, Vref = 2.85V, Icq = 80mA) Figure 10 – Spectrum with 25dBm 11Mb/s CCK (Vc = 5V, Vref = 2.85V, Icq = 80mA, Ic = 214mA, Frequency = 2.45GHz) G GRAPHS Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET EVALUATION BOARD W WW . Microsemi . C OM Location C1 C2 C3 C4,C5 L1,L2 R1 R2 TL1 TL2 TL3 Substrate Recommended BOM Value 2.2 pF (0402) 2.4 pF (0402) 3.3 pF (0402) 1 uF (0603) 8.2 nH(0402) 350 Ω (0402) 200 Ω (0402) 30/22 mil (L/W) 100/10 mil (L/W) 60/10 mil (L/W) 10 mil GETEK εr =3.9, tan δ = 0.01 50Ω Microstrip width: 22 mil EVALUATION EVALUATION Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET PACKAGE DIMENSIONS W WW . Microsemi . C OM LQ 16-Pin MLPQ 3x3 D b E2 L D2 E or A1 A3 A e K or Pin 1 Indicator Dim A A1 A3 b D E e D2 E2 K L L1 MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 0.15 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 0.006 Or D b E2 L Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container. 2. E D2 L1 e A1 A K MECHANICALS MECHANICALS Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET TAPE AND REEL W WW . Microsemi . C OM Tape And Reel Specification Ø 1.50mm 1.75mm 4.00mm Top View 5.5 ± 0.05mm 3.30mm 12.00 ± 0.3mm 3.30mm Ø 1.50mm 1.10mm 8.00mm Part Orientation Side View 0.30mm 2.2mm Ø 13mm +1.5 -0.2 10.6mm Ø 330mm ±0.5 Ø 97mm ±1.0 MECHANICALS MECHANICALS 13mm +1.5 Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET NOTES W WW . Microsemi . C OM N NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 9