LX5530LQ

LX5530 TM ® InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES Broadband 4.9 – 5.9GHz Operation Advanced InGaP HBT Single-Polarity 3 – 5V Supply Power Gain up to ~ 33dB for VC=5V, Icq = 250mA Power Gain > ~28dB across 4.95.85GHz OFDM Mask Compliance Power Pout ~ +25dBm over 4.95.85GHz (ACPR ~ -50dBc @ ±30MHz Offset) Pout up to +23dBm with EVM ~3% (VC = 5V) EVM < ~2.5% for Pout=+21dBm across 4.95.85GHz (VC = 5V) EVM < ~2.5% for Pout=+19dBm across 4.95.85GHz (VC = 4V) Total Current ~250mA for Pout = +20dBm, Duty Cycle = 99% (VC= 4V) Complete On-Chip Input Match Simple Output Match for Optimal Broadband EVM On-Chip RF Decoupling Temperature-Compensated OnChip Output Power Detector with Wide Dynamic Range Small Footprint: 3x3mm Low Profile: 0.9mm APPLICATIONS The LX5530 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9 – 5.9 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3 – 5V, with high power gain of up to 33dB. When operated at 5V supply voltage, it provides up to +25dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of 3% for up to +23dBm output power in the 4.9-5.9GHz band. The LX5530 also features an on-chip power detector at the output port of the PA to help reduce BOM cost and PCB space for implementation of power control in a typical wireless system. The power detector is integrated with a temperature-compensated bias network and provides very stable response across a wide range of output power levels, over temperature extremes from -40 to +85°C. The LX5530 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability makes the LX5530 an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN, as well as the emerging 802.16 WiMAX applications. W WW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com BLOCK DIAGRAM Vc RF Input Active Active Bias Network Vref RF Output Det FCC U-NII Wireless IEEE 802.11a HiperLAN2 5GHz Cordless Phone IEEE 802.16 WiMAX 3X3MM MLP PACKAGE PACKAGE ORDER INFO MSC 5530 608Y LQ Plastic MLPQ 16 pin RoHS Compliant / Pb-free LX5530 LX5530 LX5530LQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5530LQ-TR) Copyright © 2000 Rev. 1.0a, 2006-09-12 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 TM ® W WW . Microsemi . C OM INFORMATION Thank you for your interest in Microsemi® IPG products. The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link http://www.microsemi.com/contact/contactfind.asp or Contact us directly by sending an email to: IPGdatasheets@microsemi.com Be sure to specify the data sheet you are requesting and include your company name and contact information and or vcard. We look forward to hearing from you. Copyright Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570