MSC1090M
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Features
• • • • • • 1025-1150 MHz GOLD METALLIZATION INPUT MATCHED INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 90 W MINIMUM GP = 8.4 dB
DESCRIPTION:
The MSC1090M is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. Low RF thermal resistance and emitter ballasting ensure high reliability and product consistency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
PDISS VCBO Vces Vebo TJ IC TSTG
Power Dissipation Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Junction Temperature Device Current Storage Temperature
220 65 65 3.5 200 5.52 -65 to +150
W V
V V ºC
A ºC
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance .8 °C/W
Revision A, January 2010
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
MSC1090M
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC
Symbol Test Conditions Min. Value Typ. Max. Units
BVCBO BVCER BVEBO ICES HFE
IC = 10 mA IC = 10 mA IE = 1 mA VCE = 50 V VCE = 5 V
IE = 0 mA RBE = 10Ω IC = 0 mA IC = 500 mA
65 65 3.5 --15
-----------
------6.25 120
V V V mA ---
DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Units
POUT ηC GP
Conditions
f =1025 - 1150 MHz f =1025 - 1150 MHz f =1025 - 1150 MHz
PIN = 13W PIN = 13W PIN = 13W
VCE =50V VCE =50V VCE =50V
90 35 8.4
-------
-------
W % dB
Pulse Width = 10 µs Duty Cycle = 1%
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
MSC1090M
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.
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