CM100BU-12H

MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H K F G V T U N L TAB#110 t=0.5 V W X P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of four IGBTs in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100BU-12H is a 600V (VCES), 100 Ampere FourIGBT Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 12 GuP EuP U GvP EvP V GuN EuN N GvN EvN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 2.83 2.17±0.01 3.58 2.91±0.01 0.43 0.79 0.69 0.75 0.39 0.41 0.05 Millimeters 72.0 55±0.25 91.0 74.0±0.25 11.0 20.0 17.5 19.1 10.0 10.5 1.25 Dimensions M N P Q R S T U V W X Inches 0.74 0.02 1.55 0.63 0.57 0.22 Dia. 0.32 1.02 0.59 0.20 1.61 Millimeters 18.7 0.5 39.3 16.0 14.4 5.5 Dia. 8.1 26.0 15.0 5.0 41.0 Sep.1998 MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M4 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM100BU-12H -40 to 150 -40 to 125 600 ±20 100 200* 100 200* 400 1.3 ~ 1.7 2.5 ~ 3.5 390 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25°C IC = 100A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage* VCC = 300V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6 2.4 2.6 200 – Max. 1 0.5 7.5 3.0 – – 2.6 Units mA µA Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 100A, VGE1 = VGE2 = 15V, RG = 6.3Ω, Resistive Load Switching Operation IE = 100A, diE/dt = -200A/µs IE = 100A, diE/dt = -200A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.24 Max. 8.8 4.8 1.3 100 250 200 300 160 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/4 Module Per FWDi 1/4 Module Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.025 Max. 0.31 0.7 – Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 160 15 13 160 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 200 14 COLLECTOR CURRENT, IC, (AMPERES) 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 12 120 11 120 80 10 80 40 0 40 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 50 100 150 200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C 101 Tj = 25°C Cies CAPACITANCE, Cies, Coes, Cres, (nF) 8 6 4 2 IC = 200A EMITTER CURRENT, IE, (AMPERES) 100 Coes IC = 100A 102 Cres 10-1 VGE = 0V IC = 40A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-2 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -200 A/µsec Tj = 25°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, trr, (ns) 103 VCC = 300V VGE = ±15V RG = 6.3 Ω Tj = 125°C td(off) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 100A 16 12 8 4 VCC = 200V VCC = 300V SWITCHING TIME, (ns) tf 102 td(on) 102 trr Irr 101 tr 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 50 100 150 200 250 300 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998