FGR3000FX-90DA

MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FGR3000FX-90DA OUTLINE DRAWING Dimensions in mm GATE (WHITE) 500 ± 8 AUXILIARY CATHODE CONNECTOR (RED) φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME q ITQRM Repetitive controllable on-state current ...........3000A q IT(AV) Average on-state current .......................780A q VDRM Repetitive peak off state voltage ...................4500V q Reverse conducting type 26 ± 0.5 0.4 MIN 0.4 MIN φ 85 ± 0.2 φ 85 ± 0.2 φ 120 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VDRM VDSM VD(DC) VLTDS + : VGK = –2V Parameter Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Long term DC stability voltage+ Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing RMS Reverse current Average reverse current Surge (non-repetitive) reverse current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Voltage class 90DA 4500 4500 3600 3000 Conditions VDM = 4500V, Tj = 125°C, CS = 6.0µF, LS = 0.2µH f = 60Hz, sine wave θ = 180°, Tf = 70°C One half cycle at 60Hz One cycle at 60Hz f = 60Hz, sine wave θ = 180°C, Tf = 75°C One half cycle at 60Hz One cycle at 60Hz VD = 3000V, IGM = 75A, Tj = 75°C Ratings 3000 1220 780 16 1.0 × 106 940 600 16 1.0 × 106 500 10 18 100 900 400 27 100 230 –40 ~ +125 –40 ~ +150 31 ~ 43 1450 Unit V V V V Unit A A A kA A2s A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 Symbol ITQRM IT(RMS) IT(AV) ITSM IT2t IR(RMS) IR(AV) IRSM IR2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Recommended value 37 Standard value MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol VTM VRM IDRM IRG dv/dt tgt tgq IGQM VGT IGT Rth(j-f) Parameter On-state voltage Peak reverse voltage drop Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-off time Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Test conditions Tj = 125°C, ITM = 3000A, Instantaneous measurment Tj = 125°C, IRM = 3000A, Instantaneous measurment Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 3000V, VGK = –2V Tj = 125°C, ITM = 3000A, IGM = 75A, VD = 3000V Tj = 125°C, ITM = 3000A, VDM = 4500V, diGQ/dt = –30A/µs VRG = 17V, CS = 6.0µF, LS = 0.2µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C GTO Side (Junction to fin) Diode Side (Junction to fin) Min — — — — 1000 — — — — — — Limits Typ — — — — — — — 720 — — — Max 5.0 4.5 250 500 — 10 30 — 1.5 3000 0.016 0.025 Unit V V mA mA V/µs µs µs A V mA °C/W PERFORMANCE CURVES MAXIMUM ON-STATE AND MAXIMUM REVERSE CHARACTERISTICS 104 7 Tj = 125°C 5 3 2 CURRENT (A) 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 6 7 8 REVERSE CHARACTERISTIC (DIODE PART) ON-STATE CHARACTERISTIC (GTO PART) RATED ON-STATE AND REVERSE SURGE CURRENT 20 SURGE CURRENT (kA) 15 DIODE PART, GTO PART 10 5 00 10 23 5 7 101 23 5 7 102 VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO FIN) 100 2 3 5 7 101 0.040 THERMAL IMPEDANCE (°C/ W) 0.035 0.030 DIODE PART GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 GATE VOLTAGE (V) VFGM = 10V PFGM = 400W PFG(AV) = 100W VGT = 1.5V 0.025 0.020 GTO PART 0.015 0.010 0.005 DIODE PART Tj = 25°C IGT = 3000mA IFGM = 100A 10–1 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 GATE CURRENT (mA) 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) Aug.1998 GTO PART MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (GTO PART, SINGLE-PHASE HALF WAVE) 5000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (GTO PART, SINGLE-PHASE HALF WAVE) 130 120 4000 FIN TEMPERATURE (°C) θ 180° θ 360° RESISTIVE, INDUCTIVE LOAD 360° RESISTIVE, 3000 INDUCTIVE LOAD θ = 30° 60° 110 100 90 80 70 60 θ = 30° 60° 120° 90° 2000 1000 90° 120° 180° 0 0 100 200 300 400 500 600 700 800 50 0 100 200 300 400 500 600 700 800 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (GTO PART, RECTANGULAR WAVE) 5000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (GTO PART, RECTANGULAR WAVE) 130 120 4000 180° 120° 90° 270° FIN TEMPERATURE (°C) DC θ 360° RESISTIVE, INDUCTIVE LOAD 110 100 90 80 70 60 θ = 30° 60° 3000 θ = 30° 60° 2000 θ 360° RESISTIVE, INDUCTIVE LOAD 1000 90° 180° 120° 270° DC 0 0 300 600 900 1200 1500 50 0 300 600 900 1200 1500 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) REVERSE POWER DISSIPATION (W) MAXIMUM REVERSE POWER DISSIPATION CHARACTERISTICS (DIODE PART, SINGLE PHASE WAVE) 2000 RESISTIVE, INDUCTIVE LOAD 180° CONDUCTION ALLOWABLE FIN TEMPERATURE VS. AVERAGE REVERSE CURRENT (DIODE PART, SINGLE PHASE HALF WAVE) 130 120 RESISTIVE, INDUCTIVE LOAD 180° CONDUCTION 1600 FIN TEMPERATURE (°C) 0 250 500 750 1000 110 100 90 80 70 60 1200 800 400 0 50 0 250 500 750 1000 AVERAGE REVERSE CURRENT (A) AVERAGE REVERSE CURRENT (A) Aug.1998 MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE 8000 GATE TRIGGER CURRENT (mA) 7000 6000 5000 4000 3000 2000 1000 0 –60 –20 20 60 100 140 VD = 5~20V IT = 25~200A HALF SINE WAVE TURN ON TIME tgt, TURN ON DELAY TIME td (µs) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70 80 90 100 TURN ON GATE CURRENT (A) tgt td IT = 3000A VD = 3000V diT/dt = 500A/µs diG/dt = 30A/µs Tj = 125°C JUNCTION TEMPERATURE (°C) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF GATE CURRENT (TYPICAL) 40 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V 30 CS = 6.0µF LS = 0.2µH 25 Tj = 125°C TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 35 tgq 40 tgq 30 20 15 10 5 0 0 ts 20 VD = 2250V VDM = 3375V IT = 3000A 10 VRG = 17V CS = 6.0µF LS = 0.2µH Tj = 125°C ts 500 1000 1500 2000 2500 3000 3500 4000 TURN OFF CURRENT (A) 0 10 20 30 40 50 60 RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 800 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT (A) VD = 2250V VDM = 3375V diGQ/dt = –30A/µs 700 VRG = 17V CS = 6.0µF LS = 0.2µH 600 Tj = 125°C TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 900 VD = 2250V VDM = 3375V IT = 3000A VRG = 17V 800 CS = 6.0µF LS = 0.2µH 750 Tj = 125°C 850 700 650 600 550 500 10 20 30 40 50 60 500 400 300 500 1000 1500 2000 2500 3000 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) Aug.1998 MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FGR3000FX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE TURN ON SWITCHING ENERGY (MAXIMUM) 3.5 SWITCHING ENERGY Eon (J/P) SWITCHING ENERGY Eoff (J/P) VD = 3000V IGM = 75A diG/dt = 30A/µs 3.0 CS = 6.0µF RS = 5Ω Tj = 125°C TURN OFF SWITCHING ENERGY (MAXIMUM) VD = 3000V VDM = 4000V diGQ/dt = –30A/µs VRG = 17V 20 CS = 6.0µF LS = 0.2µH Tj = 125°C 25 diT/dt = 300A/µs 200A/µs 100A/µs 2.5 15 2.0 1.5 1.0 500 10 1100 1700 2300 2900 3500 5 500 1000 1500 2000 2500 3000 ON STATE CURRENT (A) TURN OFF CURRENT (A) OFF STATE RECOVERY CHARGE, OFF STATE RECOVERY TIME VS. JUNCTION TEMPERATURE OFF STATE RECOVERY CHARGE (µC) OFF STATE RECOVERY TIME (µS) OFF STATE RECOVERY CHARGE, OFF STATE RECOVERY TIME VS. REVERSE CURRENT OFF STATE RECOVERY CHARGE (µC) OFF STATE RECOVERY TIME (µS) 3 2 103 7 5 3 2 MAX. 5 di/dt = 100A/µs 3 Tj = 125°C 2 103 7 5 3 2 102 7 5 3 2 MAX. AV. Qdr IRM = 1500A di/dt = 100A/µs Tj = 125°C AV. Qdr 102 7 5 3 2 101 7 5 3 tdr MAX. tdr MAX. AV. 0 20 40 60 80 100 120 140 101 AV. 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 REVERSE CURRENT (A) JUNCTION TEMPERATURE (°C) OFF STATE RECOVERY LOSS(DIODE PART) (J/P) OFF STATE RECOVERY CHARGE (µC) OFF STATE RECOVERY TIME (µS) OFF STATE RECOVERY CHARGE, OFF STATE RECOVERY TIME VS. RATE OF DECREASE OF REVERSE CURRENT 5 IRM = 1500A 3 Tj = 125°C MAX. 2 103 7 5 3 2 102 7 5 3 2 AV. Qdr OFF STATE RECOVERY LOSS(DIODE PART) VS. REVERSE CURRENT (TYPICAL) 8 7 CS = 6.0µF Tj = 125°C VRM = 3000V di/dt = 300A/µs 6 5 4 3 2 1 0 500 1100 1700 2300 2900 3500 100A/µs tdr MAX. 101 7 AV. 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECREASE OF REVERSE CURRENT (A/µS) REVERSE CURRENT (A) Aug.1998