2N6388G

2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. www.onsemi.com Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc • • • • VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc − 2N6387, 2N6388 Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package These Devices are Pb−Free and are RoHS Compliant* DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS 4 MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6387 2N6388 VCEO 60 80 Vdc Collector−Base Voltage 2N6387 2N6388 VCB 60 80 Vdc VEB 5.0 Vdc Collector Current − Continuous − Peak IC 10 15 Adc Base Current IB 250 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 65 0.52 W W/°C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/°C TJ, Tstg −65 to +150 °C Emitter−Base Voltage Operating and Storage Junction, Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol Max Unit RqJC 1.92 _C/W RqJA 62.5 _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 15 1 1 2 3 TO−220 CASE 221A STYLE 1 MARKING DIAGRAM 2N638xG AYWW 2N638x = Device Code x = 7 or 8 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping 2N6387G TO−220 (Pb−Free) 50 Units / Rail 2N6388G TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: 2N6387/D PD, POWER DISSIPATION (WATTS) 2N6387, 2N6388 TA 4.0 TC 80 3.0 60 TC 2.0 40 1.0 20 TA 0 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 140 160 Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max 60 80 − − − − 1.0 1.0 − − − − 300 300 3.0 3.0 − 5.0 1000 100 20,000 − − − 2.0 3.0 − − 2.8 4.5 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) VCEO(sus) 2N6387 2N6388 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N6387 2N6388 Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE − 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N6387 2N6388 2N6387 2N6388 Vdc ICEO mAdc mAdc ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (Note 3) hFE DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 1 0 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388 2N6387, 2N6388 Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) 2N6387, 2N6388 2N6387, 2N6388 Base−Emitter On Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc) (IC = 10 Adc, VCE = 3.0 Vdc) 2N6387, 2N6388 2N6387, 2N6388 − VCE(sat) Vdc VBE(on) Vdc DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) |hfe| 20 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 200 pF Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 1000 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 2N6387, 2N6388 VCC + 30 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA RC SCOPE TUT RB V1 APPROX + 12 V 0 51 V2 -8V [ 8.0 k [ 120 - 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 25 ms APPROX D1 tr, tf v 10 ns DUTY CYCLE = 1.0% Figure 2. Switching Times Test Circuit 7.0 5.0 3.0 ts t, TIME (s) μ tf 1.0 0.7 0.3 0.2 0.1 0.07 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 td 0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMPS) 5.0 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Switching Times 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZqJC (t) = r(t) RqJC RqJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 4. Thermal Response http://onsemi.com 3 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k 2N6387, 2N6388 20 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown IC, COLLECTOR CURRENT (AMPS) 10 ms 5.0 50 ms 1 ms dc 2.0 50 ms 5 ms 1.0 TJ = 150°C 0.5 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 100°C SECOND BREAKDOWN LIMITED 0.2 0.1 CURVES APPLY BELOW RATED VCEO 0.03 1.0 2N6387 2N6388 40 10 20 2.0 4.0 6.0 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 Figure 5. Active-Region Safe Operating Area 300 TJ = 25°C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25°C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 Cob 100 Cib 70 50 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 30 0.1 500 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 20,000 VCE = 4.0 V hFE, DC CURRENT GAIN 10,000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 100 Figure 7. Capacitance Figure 6. Small−Signal Current Gain 5000 50 5.0 7.0 10 3.0 TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 Figure 8. DC Current Gain 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 Figure 9. Collector Saturation Region http://onsemi.com 4 20 30 2N6387, 2N6388 θV, TEMPERATURE COEFFICIENTS (mV/°C) 3.0 V, VOLTAGE (VOLTS) TJ = 25°C 2.5 2.0 1.5 1.0 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 + 5.0 + 4.0 + 3.0 hFE@VCE + 4.0V 3 25°C to 150°C + 2.0 + 1.0 *qVC for VCE(sat) -55°C to 25°C 0 - 1.0 - 2.0 - 3.0 25°C to 150°C qVB for VBE -55°C to 25°C - 4.0 - 5.0 0.1 5.0 7.0 10 *IC/IB ≤ 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients 105 IC, COLLECTOR CURRENT (A) μ REVERSE FORWARD COLLECTOR 104 103 VCE = 30 V 102 BASE TJ = 150°C 101 100 [ 8.0 k [ 120 100°C 25°C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 EMITTER +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut−Off Region Figure 13. Darlington Schematic http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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