2SA1417T-TD-E

DATA SHEET www.onsemi.com Bipolar Transistor 1 (-)100 V, (-)2 A, Low VCE(sat), (PNP)NPN Single PCP 2 3 SOT−89−3 CASE 419AU 2SA1417, 2SC3647 ELECTRICAL CONNECTION Features • Adoption of FBET, MBIT Processes • High Breakdown Voltage and Large Current Capacity • Ultrasmall Size Making it Easy to Provide High−density Small−sized 2 2 1 1 : Base 2 : Collector 3 : Emitter 1 Hybrid ICs • These Devices are Pb−Free and Halide Free SPECIFICATIONS ( ): 2SA1417 3 3 2SA1417 2SC3647 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Unit VCBO Collector−to−Base Voltage (−)120 V VCEO Collector−to−Emitter Voltage (−)100 V VEBO Emitter−to− Base Voltage (−)6 V IC Collector Current (−)2 A ICP Collector Current (Pulse) (−)3 A PC Collector Dissipation 500 mW 1.5 W RANK RANK 2SA1417 2SC3647 ORDERING INFORMATION When mounted on ceramic substrate (250 mm2 x 0.8 mm) Tj Junction Temperature 150 °C Tstg Storage Temperature − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2013 June, 2022 − Rev 3 LOT No. MARKING DIAGRAM Ratings CC Conditions LOT No. Parameter AC Symbol 1 Package Shipping† 2SA1417S−TD−E PCP (Pb−Free) 1000 / Tape & Reel 2SA1417T−TD−E PCP (Pb−Free) 1000 / Tape & Reel 2SC3647S−TD−E PCP (Pb−Free) 1000 / Tape & Reel 2SC3647T−TD−E PCP (Pb−Free) 1000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2SA1417/D 2SA1417, 2SC3647 ELECTRICAL CHARACTERISTICS (TA = 25°C) Ratings Parameter Symbol Conditions Min Typ Max Unit − − (−)100 nA ICBO Collector Cutoff Current VCB = (−)100 V, IE = 0 A IEBO Emitter Cutoff Current VEB = (−)4 V IC = 0 A − − (−)100 nA hFE DC Current Gain VCE = (−)5 V, IC = (−)100 mA 100* − 400* − Gain−Bandwidth Product VCE = (−)10 V, IC = (−)100 mA − 120 − MHz Output Capacitance VCB = (−)10 V, f = 1 MHz − (25)16 − pF VCE(sat) Collector−to−Emitter Saturation Voltage IC = (−)1 A, IB= (−)100 mA − (−0.22) 0.13 (−0.6) 0.4 V VBE(sat) Base−to−Emitter Saturation Voltage IC = (−)1 A, IB= (−)100 mA − (−)0.85 (−)1.2 V V(BR)CBO Collector−to−Base Breakdown Voltage IC = (−)10 mA, IE = 0 A (−)120 − − V V(BR)CEO Collector−to−Emitter Breakdown Voltage IC = (−)1 mA, RBE = ∞ (−)100 − − V V(BR)EBO Emitter−to−Base Breakdown Voltage IE = (−)10 mA, IC = 0 A (−)6 − − V ton Turn−On Time See specified Test Circuit. − (80)80 − ns tstg Storage Time − (750)1000 − ns Fall Time − (40)50 − ns fT Cob tf Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *The 2SA1417/2SC3647 are Classified by 100 mA hFE as Follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 SWITCHING TIME TEST CIRCUIT IB1 PW = 20 ms D.C. = ≤ 1% INPUT OUTPUT IB2 VR RB RL 50 W 100 mF VBE = − 5 V 470 mF VCC = 50 V IC = 10 IB1 = −10 IB2 = 0.7 A For PNP, the polarity is reversed. Figure 1. Switching Time Test Circuit www.onsemi.com 2 2SA1417, 2SC3647 TYPICAL CHARACTERISTICS −2.0 2.0 −40 mA 2SA1417 30 mA −20 mA IC, Collector Current (A) IC, Collector Current (A) −1.6 −10 mA −1.2 −5 mA −0.8 −3 mA −2 mA 0.4 1 mA IB = 0 mA 0 0 −1 −2 −3 −4 1.6 10 mA 1.2 5 mA 0.8 3 mA 2 mA 0.4 0 −5 20 mA 1 mA IB = 0 mA 0 1 VCE, Collector−to−Emitter Voltage (V) 2 −4 mA −3 mA −0.6 −2 mA −0.4 −1 mA −0.2 0 IB = 0 mA 0 −10 −20 −30 3.5 mA 0.8 3.0 mA 2.5 mA 0.6 2.0 mA 0.4 1.5 mA 1.0 mA 0.2 0 −50 −40 0.5 mA IB = 0 mA 0 10 VCE, Collector−to−Emitter Voltage (V) 40 2.4 IC, Collector Current (A) IC, Collector Current (A) TA = 75°C −1.2 25°C −0.8 −25°C −0.4 0 −0.2 −0.4 −0.6 −0.8 50 2SC3647 VCE = 5 V 2.0 −1.6 0 30 Figure 5. IC − VCE 2SA1417 VCE = −5 V −2.0 20 VCE, Collector−to−Emitter Voltage (V) Figure 4. IC − VCE −2.4 2SC3647 4.0 mA IC, Collector Current (A) IC, Collector Current (A) −0.8 5 4.5 mA 1.0 2SA1417 −5 mA 4 Figure 3. IC − VCE 5.0 mA −6 mA 3 VCE, Collector−to−Emitter Voltage (V) Figure 2. IC − VCE −1.0 40 mA 50 mA 2SC3647 −30 mA −1.0 1.6 TA = 75°C 1.2 0.8 −25°C 0.4 0 −1.2 25°C 0 VBE, Base−to−Emitter Voltage (V) 0.2 0.4 0.6 0.8 1.0 VBE, Base−to−Emitter Voltage (V) Figure 6. IC − VBE Figure 7. IC − VBE www.onsemi.com 3 1.2 2SA1417, 2SC3647 TYPICAL CHARACTERISTICS (continued) 1000 1000 2SA1417 VCE = − 5 V 7 5 5 TA = 75°C 3 hFE, DC Current Gain hFE, DC Current Gain 2SC3647 VCE = 5 V 7 25°C 2 −25°C 100 7 5 3 TA = 75°C 2 25°C −25°C 100 7 5 3 −7 −0.01 −2 −3 −5 −7 −0.1 −2 −3 3 −5 −7 −1.0 −2 −3 7 0.01 2 3 5 7 0.1 IC, Collector Current (A) Output Capacitance Cob − (pF) 100 7 2SC3647 3 2 For PNP minus sign is omitted 7 0.01 2 7 5 7 0.1 2 10 3 5 7 1.0 2 IC, Collector Current (A) Figure 10. fT − IC −1000 7 5 2SA1417 IC / IB = 10 3 2 −100 25°C 7 5 TA = 75°C 3 2 −10 −25°C 7 −0.01 2 3 2 3 5 7 −0.1 2 3 5 7 −1.0 IC, Collector Current (A) 2 3 3 2SA1417 / 2SC3647 f = 1 MHz 7 2SA1417 5 3 2 2SC3647 10 7 5 3 VCE(sat), Collector−to−Emitter Saturation Voltage − (mV) fT, Gain−Bandwidth Product − (Mhz) VCE(sat), Collector−to−Emitter Saturation Voltage − (mV) 100 2SA1417 5 5 7 1.0 Figure 9. hFE − IC 2SA1417 / 2SC3647 VCE = 10 V 2 3 IC, Collector Current (A) Figure 8. hFE − IC 3 2 For PNP minus sign is omitted 7 1.0 2 3 5 7 10 2 3 2 VCB, Collector−to−Base Voltage (V) Figure 11. Cob − VCB 1000 2SC3647 IC / IB = 10 7 5 3 2 100 7 5 Tc = 75°C 25°C 3 2 10 7 −0.01 −25°C 2 3 5 7 −0.1 2 3 5 7 −1.0 IC, Collector Current (A) Figure 13. VCE (sat) − IC Figure 12. VCE (sat) − IC www.onsemi.com 4 5 7 100 2 3 2SA1417, 2SC3647 −10 2SA1417 IC / IB = 10 7 5 3 2 −1.0 TA = − 25°C 25°C 7 5 75°C 3 −7 −0.01 2 3 5 7 −0.1 2 3 5 7 −1.0 2 3 IC, Collector Current (A) VBE(sat), Base−to−Emitter Saturation Voltage (V) VBE(sat), Base−to−Emitter Saturation Voltage (V) TYPICAL CHARACTERISTICS (continued) 10 2SC3647 IC / IB = 10 7 5 3 2 TA = − 25°C 7 5 3 75°C 7 0.01 2 3 0.1 7 5 3 2 1.8 2SA1417 / 2SC3647 1 ms 10 ms 100 ms DC Operation For PNP MINUS SIGN IS OMITTED TA = 25°C Single pulse Mounted on a ceramic board 250 mm2 X 0.8 mm 0.01 7 55 7 1.0 2 3 5 7 10 2 3 7 0.1 2 3 5 7 1.0 2 3 Figure 15. VBE (sat) − IC PC, Collector Dissipation (W) IC, Collector Current (A) 1.0 7 5 3 2 5 IC, Collector Current (A) Figure 14. VBE (sat) − IC 5 I =3A 3 CP IC = 2 A 2 25°C 1.0 2SA1417 / 2SC3647 Mounted on a ceramic board (250 mm2 x 0.8 mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.5 0.4 Infinite Heat Sink 0.2 5 7 100 0 0 2 20 40 60 80 100 120 Ta Ambient Temperature (°C) VCE, Collector−to−Emitter Voltage (V) Figure 16. A S O Figure 17. PC − Ta www.onsemi.com 5 140 160 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−89 / PCP−1 CASE 419AU ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON79746E SOT−89 / PCP−1 DATE 30 APR 2012 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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