BAS31-D87Z

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. BAS31 — Small Signal Diode BAS31 Small Signal Diode Connection Diagram 3 3 3 L21 2 1 1 2 1 2 SOT-23 Ordering Information Part Number Top Mark Package Packing Method BAS31 L21 SOT-23 3L Tape and Reel, 7 inch Reel, 3000 pcs BAS31-D87Z L21 SOT-23 3L Tape and Reel, 13 inch Reel, 10000 pcs Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 120 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-Repetitive Peak Forward Surge Current TSTG Storage Temperature Range TJ Operating Junction Temperature Pulse Width = 1.0 second 1.0 Pulse Width = 1.0 microsecond 2.0 A -55 to +150 °C 150 °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. © 2001 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Publication Order Number: BAS31/D Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction-to-Ambient 357 °C/W Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol VR VF Parameter Breakdown Voltage Forward Voltage Conditions IR = 1.0 mA Min. Max. 120 Unit V IF = 10 mA 750 mV IF = 50 mA 840 mV IF = 100 mA 900 mV IF = 200 mA 1.00 V IF = 400 mA 1.25 V VR = 90 V 100 nA VR = 90 V, TA = 150°C 100 μA IR Reverse Current CT Total Capacitance VR = 0, f = 1.0 MHz 35 pF trr Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω 50 ns www.onsemi.com 2 BAS31 — Small Signal Diode Thermal Characteristics BAS31 — Small Signal Diode IR - REVERSE CURRENT (nA) 325 Ta= 25°C 300 275 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) IIRR - REVERSE CURRENT (nA) 100 Ta= 25°C 80 70 60 50 40 30 20 180 200 220 240 VR - REVERSE VOLTAGE (V) 30 20 10 0 55 255 400 350 300 250 725 Ta= 25°C 700 650 600 550 500 10 Figure 5. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Figure 4. Forward Voltage vs. Forward Current VF - 1.0 to 100 μA VVFF - FORWARD VOLTAGE (mV) VVF F - FORWARD VOLTAGE (mV) Ta= 25°C 450 1 Figure 3. Reverse Current vs. Reverse Voltage IR - 180 to 255 V 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) Figure 2. Reverse Current vs. Reverse Voltage IR - 55 to 205 V GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature 450 0.1 Ta= 25°C 40 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100 μA 90 50 100 V VFF - FORWARD VOLTAGE (mV) VVRR - REVERSE VOLTAGE (V) Typical Performance Characteristics 1.4 Ta= 25°C 1.3 1.2 1.1 1 0.9 0.8 0.7 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 800 Figure 6. Forward Voltage vs. Forward Current VF - 10 to 800 mA www.onsemi.com 3 BAS31 — Small Signal Diode 1.3 Ta= -40°C 600 Ta= 25°C 400 Ta= +80°C 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10 500 I - CURRENT (mA) 50 40 30 20 0 IF = IR = 30 mA Rloop = 100 Ohms 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) 3 Figure 9. Reverse Recovery Time vs. Reverse Recovery Current (Irr) 400 300 100 0 0 PD - POWER DISSIPATION (mW) SOT-23 Pkg 100 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 14 15 -F OR WA RD CU RR EN TS TE AD 50 100 150 o TA - AMBIENT TEMPERATURE ( C) Figure 10. Average Rectified Current(IO) and Forward Current (IF) vs. Ambient Temperature(TA) 300 0 12 Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 400 0 4 6 8 10 REVERSE VOLTAGE (V) IR 500 200 2 Figure 8. Capacitance vs. Reverse Voltage Figure 7. Forward Voltage vs. Ambient Temperature VF - 1.0 μA - 10 mA (- 40 to +80°C) REVERSE RECOVERY (nS) Ta= 25°C 800 CAPACITANCE (pF) VVFF - FORWARD VOLTAGE (mV) Typical Performance Characteristics (Continued) 200 Figure 11. Power Derating Curve www.onsemi.com 4 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE www.onsemi.com 5 BAS31 — Small Signal Diode Physical Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com