BD788G

BD787G (NPN), BD788G(PNP) Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features http://onsemi.com 4 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 15 WATTS • Low Collector−Emitter Sustaining Voltage • High Current−Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Symbol Value Unit PNP NPN Collector−Emitter Voltage VCEO 60 Vdc COLLECTOR 2, 4 COLLECTOR 2, 4 Collector−Base Voltage VCBO 80 Vdc Emitter Base Voltage VEBO 6.0 Vdc IC 4.0 Adc 3 BASE 3 BASE Rating Collector Current − Continuous Collector Current − Peak ICM 8.0 Adc Base Current − Continuous IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 15 0.12 W mW/_C –65 to +150 _C Operating and Storage Junction Temperature Range TJ, Tstg EMITTER 1 EMITTER 1 TO−225 CASE 77−09 STYLE 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 8.34 _C/W MARKING DIAGRAM YWW BD78xG Y = Year WW = Work Week BD78x = Device Code x = 7 or 8 G = Pb−Free Package ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 13 1 Package Shipping BD787G TO−225 (Pb−Free) 500 Units/Box BD788G TO−225 (Pb−Free) 500 Units/Box Publication Order Number: BD787/D BD787G (NPN), BD788G (PNP) ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 60 − − 100 mAdc − − 1.0 0.1 mAdc mAdc − 1.0 40 25 20 5.0 250 − − − − − − − 0.4 0.6 0.8 2.5 − 2.0 − 1.8 50 − OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125°C) ICEX Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO Vdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 200 mAdc, VCE = 3.0 Vdc) (IC = 1.0 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 4.0 Adc, IB = 800 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz) fT Output Capacitance (VCB = 10 Vdc, IC = 0) BD787G (f = 0.1 MHz) BD788G Cob Small−Signal Current Gain (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz pF − 50 − 70 10 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data 1. Pulse Test; Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 16 1.6 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 100 80 120 TA PD, POWER DISSIPATION (WATTS) TC PD, POWER DISSIPATION (WATTS) BD787G (NPN), BD788G (PNP) 0 160 140 T, TEMPERATURE (°C) Figure 1. Power Derating 500 + 30 V VCC 25 ms 300 RC + 11 V VCC = 30 V IC/IB = 10 TJ = 25°C 200 SCOPE 100 - 9.0 V 51 tr, tf v 10 ns DUTY CYCLE = 1.0% t, TIME (ns) RB 0 D1 -4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS tr 70 50 30 20 td @ VBE(off) = 5.0 V 10 7.0 5.0 0.04 0.06 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. BD787 (NPN) BD788 (PNP) 0.1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 4.0 2.0 Figure 3. Turn−On Time D = 0.5 0.2 0.1 P(pk) 0.05 0.02 t1 0.01 t2 0 (SINGLE PULSE) 0.05 RqJC(t) = r(t) RqJC RqJC = 8.34°C/W MAX 0.1 DUTY CYCLE, D = t1/t2 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 Figure 4. Thermal Response http://onsemi.com 3 10 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 20 50 100 200 BD787G (NPN), BD788G (PNP) 10 5.0 IC, COLLECTOR CURRENT (AMP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 1.0 ms 500 ms 5.0 ms 2.0 dc TJ = 150°C 1.0 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.1 0.05 0.02 BD787 (NPN) BD788 (PNP) 0.01 1.0 60 V 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 200 2000 ts t, TIME (ns) 700 500 TJ = 25°C 100 C, CAPACITANCE (pF) 1000 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 200 tf 100 70 Cib 70 50 30 Cob 20 50 30 20 0.04 0.06 (NPN) (PNP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) (NPN) (PNP) 2.0 10 1.0 4.0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn−Off Time NPN BD788 400 200 TJ = 150°C 200 VCE = 1.0 V VCE = 3.0 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 70 100 Figure 7. Capacitance NPN BD787 300 50 25°C -55°C 100 70 50 100 TJ = 150°C VCE = 1.0 V VCE = 3.0 V 25°C 70 50 -55°C 30 20 30 20 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 10 0.04 0.06 4.0 Figure 8. DC Current Gain http://onsemi.com 4 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 BD787G (NPN), BD788G (PNP) 2.0 2.0 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3.0 V 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 3.0 V 0.4 0.4 VCE(sat) @ IC/IB = 10 0 0.04 0.06 VCE(sat) @ IC/IB = 10 0.2 0.1 0.6 0.4 1.0 2.0 0 0.04 0.06 4.0 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) +2.5 +2.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 9. “On” Voltages *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 *qVC FOR VCE(sat) 25°C to 150°C 0 - 55°C to 25°C -0.5 -1.0 -1.5 25°C to 150°C qVB FOR VBE -2.0 -2.5 0.04 0.06 - 55°C to 25°C 0.1 0.2 0.4 0.6 1.0 2.0 +2.5 +2.0 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 0 - 55°C to 25°C -0.5 -1.0 -1.5 25°C to 150°C qVB FOR VBE - 55°C to 25°C -2.0 -2.5 0.04 0.06 4.0 25°C to 150°C *qVC FOR VCE(sat) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients http://onsemi.com 5 2.0 4.0 BD787G (NPN), BD788G (PNP) PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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