BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
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170 mAMPS
100 VOLTS
RDS(on) = 6 W
Features
• BVSS Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
N−Channel
3
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
Drain Current
− Continuous (Note 1)
− Pulsed (Note 2)
Symbol
Value
Unit
VDSS
100
Vdc
VGS
VGSM
± 20
± 40
ID
0.17
0.68
1
Vdc
Vpk
2
Adc
IDM
MARKING DIAGRAM
& PIN ASSIGNMENT
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Drain
3
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
SA MG
G
2
Symbol
Max
Unit
PD
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR− 5 = 1.0 0.75 0.062 in.
SOT−23
CASE 318
STYLE 21
SA
M
G
1
Gate
2
Source
= Device Code
= Date Code
= Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
March, 2019 − Rev. 11
1
Publication Order Number:
BSS123LT1/D
BSS123LT1G, BVSS123LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
100
−
−
Vdc
−
−
−
−
15
60
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 mAdc)
Zero Gate Voltage Drain Current
TJ = 25°C
(VGS = 0, VDS = 100 Vdc)
TJ = 125°C
IDSS
Gate−Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
−
−
50
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
1.6
−
2.6
Vdc
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
−
−
6.0
W
gfs
80
−
−
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
20
−
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
−
9.0
−
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
−
4.0
−
pF
td(on)
−
20
−
ns
td(off)
−
40
−
ns
VSD
−
−
1.3
V
mAdc
ON CHARACTERISTICS (Note 4)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS(4)
Turn−On Delay Time
Turn−Off Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 W)
REVERSE DIODE
Diode Forward On−Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Package
Shipping†
BSS123LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BVSS123LT1G*
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BSS123LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
BSS123LT7G
SOT−23
(Pb−Free)
3,500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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2
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.6
1.6
6V
1.0
5V
0.8
4V
0.6
0.4
3V
0.2
VGS, GATE−TO−SOURCE VOLTAGE (V)
0
1
2
4
3
5
6
8
7
9
1.2
1.0
0.8
0.6
TJ = 25°C
0.4
0
10
TJ = 150°C
1
TJ = −55°C
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
50
3.50
3.25
VGS = 4.5 V
3.00
2.75
VGS = 10 V
2.50
2.25
80
100
120
140
160
180
40
30
Ciss
20
Coss
10
0
200
Crss
0
30
40
50
60
70
80
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
Figure 4. Capacitance Variation
90 100
1
VGS = 0 V
8
6
QGS
TJ = 25°C
VGS = 10 V
VDS = 30 V
ID = 0.2 A
QGD
2
0
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QT
4
10
ID, DRAIN CURRENT (mA)
10
6
TJ = 25°C
VGS = 0
TJ = 25°C
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
VDS = 10 V
0.2
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
1.2
1.4
ID, DRAIN CURRENT (A)
TJ = 25°C
1.4
VGS = 10 V
8V
0
1
2
3
4
5
6
7
0.1
0.01
0.001
TJ = 125°C
0.0001
8
0
0.2
TJ = 25°C
0.4
TJ = −55°C
0.6
0.8
1.0
QG, TOTAL GATE CHARGE (nC)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 5. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 6. Diode Forward Voltage vs. Current
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3
1.2
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
1
0 V ≤ VGS ≤ 20 V
SINGLE PULSE
TA = 25°C
TJ = 150°C
100 ms
1 ms
10 ms
0.1
100 ms
0.01
0.001
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
dc
100
10
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
1000
D = 0.5
100
10
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.1
0.00001
0.000001
1 oz. Cu Pad, 5mm thick, 25mm2 area
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 8. Thermal Response
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4
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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