FCD2250N80Z

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCD2250N80Z N-Channel SuperFET® II MOSFET 800 V, 2.6 A, 2.25  Features Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications. • RDS(on) = 1.8 Typ.) • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Eoss (Typ. 1.1 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications • AC - DC Power Supply • LED Lighting D D G S G D-PAK S  Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FCD2250N80Z 800 - DC ±20 - AC (f > 1 Hz) o ID Drain Current Unit V - Continuous (TC = 25 C) 2.6 - Continuous (TC = 100oC) A 1.7 IDM Drain Current (Note 1) 6.5 A EAS Single Pulsed Avalanche Energy (Note 2) 21.6 mJ IAR Avalanche Current (Note 1) 0.52 A EAR Repetitive Avalanche Energy (Note 1) 0.39 mJ dv/dt - Pulsed V ±30 MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) o (TC = 25 C) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL - Derate Above 25oC V/ns 20 39 W 0.31 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCD2250N80Z RJC Thermal Resistance, Junction to Case, Max. 3.2 RJA Thermal Resistance, Junction to Ambient, Max. 100 ©2014 Fairchild Semiconductor Corporation FCD2250N80Z Rev. C0 1 Unit o C/W www.fairchildsemi.com FCD2250N80Z — N-Channel SuperFET® II MOSFET December 2014 Part Number FCD2250N80Z Top Mark FCD225080Z Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 800 - - V - 0.85 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 1 mA, TJ = 25C o ID = 1 mA, Referenced to 25 C VDS = 800 V, VGS = 0 V - - 25 VDS = 640 V, VGS = 0 V, TC = 125oC - - 250 VGS = ±20 V, VDS = 0 V - - ±10 2.5 - 4.5 V - 1.87 2.25  - 2.28 - S A A On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 0.26 mA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 1.3 A VDS = 20 V, ID = 1.3 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss VDS = 100 V, VGS = 0 V, f = 1 MHz - 440 585 pF - 16 22 pF - 0.75 - pF Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 8.4 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 51 - pF Qg(tot) Total Gate Charge at 10V 11 14 nC Gate to Source Gate Charge VDS = 640 V, ID = 2.6 A, VGS = 10 V - Qgs - 2.2 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (Note 4) - 4.3 - nC f = 1 MHz - 2.8 -  - 11 32 ns VDD = 400 V, ID = 2.6 A, VGS = 10 V, Rg = 4.7  - 6.7 23 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) - 26 62 ns - 8.7 27 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 2.6 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 6.5 A VSD Drain to Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 2.6 A - - 1.2 V VGS = 0 V, ISD = 2.6 A, dIF/dt = 100 A/s - 260 - ns - 2.2 - C Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 0.52 A, RG = 25 , starting TJ = 25C 3. ISD  2.6 A, di/dt  200 A/s, VDD  BVDSS, starting TJ = 25C 4. Essentially independent of operating temperature typical characteristic. ©2014 Fairchild Semiconductor Corporation FCD2250N80Z Rev. C0 2 www.fairchildsemi.com FCD2250N80Z — N-Channel SuperFET® II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V ID, Drain Current[A] ID, Drain Current[A] 10 1 *Notes: 1. VDS = 20V 2. 250s Pulse Test o 150 C 1 o -55 C o 25 C *Notes: 1. 250s Pulse Test o 2. TC = 25 C 0.1 0.1 1 10 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 o 3.0 VGS = 10V 1.8 VGS = 20V 1.2 0.0 1.2 2.4 3.6 ID, Drain Current [A] 4.8 2. 250s Pulse Test 10 o 25 C 1 o 150 C 0.1 0.01 0.0 6.0 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] 10 Capacitances [pF] 1000 Ciss 100 1 *Note: 1. VGS = 0V 2. f = 1MHz Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCD2250N80Z Rev. C0 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 6. Gate Charge Characteristics 10000 10 7 *Notes: 1. VGS = 0V *Note: TC = 25 C 2.4 3 4 5 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 3.6 2 3 VDS = 160V 8 VDS = 400V VDS = 640V 6 4 2 0 1000 *Note: ID = 2.6A 0 3 6 9 Qg, Total Gate Charge [nC] 12 www.fairchildsemi.com FCD2250N80Z — N-Channel SuperFET® II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 *Notes: 1. VGS = 0V 2. ID = 1mA RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.4 *Notes: 1. VGS = 10V 2. ID = 1.3A 1.8 1.2 0.6 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 3.0 10 2.4 ID, Drain Current [A] ID, Drain Current [A] 10s 100us 1 1ms Operation in This Area is Limited by R DS(on) 0.1 DC o TC = 25 C 1 10 100 VDS, Drain-Source Voltage [V] 1.2 0.6 o TJ = 150 C SINGLE PULSE 0.01 1.8 0.0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 3.0 EOSS, [J] 2.4 1.8 1.2 0.6 0 0 160 320 480 640 VDS, Drain to Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCD2250N80Z Rev. C0 800 4 www.fairchildsemi.com FCD2250N80Z — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) FCD2250N80Z — N-Channel SuperFET® II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve o ZJC(t), Thermal Response [ C/W] 10 0.5 1 0.2 PDM 0.1 t1 0.05 0.1 0.02 0.01 t2 *Notes: o 1. ZJC(t) = 3.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 ©2014 Fairchild Semiconductor Corporation FCD2250N80Z Rev. C0 -4 10 -3 -2 -1 10 10 10 t1, Rectangular Pulse Duration [sec] 5 0 10 1 10 www.fairchildsemi.com FCD2250N80Z — N-Channel SuperFET® II MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCD2250N80Z Rev. C0 6 www.fairchildsemi.com FCD2250N80Z — N-Channel SuperFET® II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCD2250N80Z Rev. C0 7 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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