FCD5N60TM

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCD5N60 / FCU5N60 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 950 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Typ. RDS(on) = 810 mΩ • Ultra Low Gate Charge (Typ. Qg = 16 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 32 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED TV and Monitor • Lighting • Solar Inverter • AC-DC Power Supply D D G S I-PAK D-PAK G D G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS S FCD5N60TM FCD5N60TM_WS FCU5N60TU 600 Parameter Drain to Source Voltage ID Drain Current IDM Drain Current VGSS Gate to Source Voltage - Continuous (TC = 25oC) V 4.6 - Continuous (TC = 100oC) - Pulsed Unit A 2.9 (Note 1) 13.8 A ±30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 159 IAR Avalanche Current (Note 1) 4.6 A EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL - Derate Above 25oC 54 W 0.43 W/oC -55 to +150 oC 300 oC FCD5N60TM FCD5N60TM_WS FCU5N60TU Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 2.3 RθJA Thermal Resistance, Junction to Ambient, Max. 83 ©2008 Fairchild Semiconductor Corporation FCD5N60 / FCU5N60 Rev. C2 1 o C/W www.fairchildsemi.com FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET August 2014 Part Number FCD5N60TM Top Mark FCD5N60 Package D-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FCD5N60TM_WS FCD5N60 D-PAK Tape and Reel 330 mm 16 mm 2500 units FCU5N60TU FCU5N60 IPAK Tube N/A N/A 75 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain to Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 250 μA, TC = 25oC 600 - - V VGS = 0 V, ID = 250 μA, TC = 150oC - 650 - V ID = 250 μA, Referenced to 25oC - 0.6 - V/oC VGS = 0 V, ID = 4.6 A - 700 - V VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = ±30 V, VDS = 0 V - - ±100 3.0 - 5.0 V - 0.81 0.95 Ω - 3.8 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 2.3 A VDS = 40 V, ID = 2.3 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V VDS = 25 V, VGS = 0 V, f = 1 MHz - 470 600 pF - 250 320 pF - 22 - pF - 12 - pF - 32 - pF - 12 30 ns - 40 90 ns - 47 95 ns - 22 55 ns - 16 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 300 V, ID = 4.6 A, VGS = 10 V, RG = 25 Ω (Note 4) VDS = 480 V, ID = 4.6 A, VGS = 10 V (Note 4) - 2.8 - nC - 7 - nC Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4.6 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 13.8 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 4.6 A - - 1.4 V trr Reverse Recovery Time - 295 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 4.6 A dIF/dt = 100 A/μs - 2.7 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.3 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2008 Fairchild Semiconductor Corporation FCD5N60 / FCU5N60 Rev. C2 2 www.fairchildsemi.com FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 ID , Drain Current [A] ID, Drain Current [A] 1 10 0 10 * Notes : 1. 250μs Pulse Test 10 o 150 C o 25 C 0 10 o -55 C * Note 1. VDS = 40V o 2. TC = 25 C -1 10 2. 250μs Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.5 1 ID , Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 3.0 VGS = 10V 2.0 1.5 VGS = 20V 1.0 10 o 150 C o 25 C 0 10 o -55 C * Note 1. VDS = 40V o 2. 250μs Pulse Test * Note : TJ = 25 C 0.5 0.0 -1 2.5 5.0 7.5 10.0 12.5 10 15.0 2 4 Figure 5. Capacitance Characteristics 10 12 Ciss = Cgs + Cgd (Cds = shorted) VDS = 100V Coss = Cds + Cgd VGS, Gate-Source Voltage [V] Crss = Cgd Capacitance [pF] 8 Figure 6. Gate Charge Characteristics 1500 * Notes : 1. VGS = 0 V 1000 2. f = 1 MHz Coss 500 6 VGS , Gate-Source Voltage [V] ID, Drain Current [A] Ciss Crss 0 0 10 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 4.6A 0 1 0 5 10 15 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2008 Fairchild Semiconductor Corporation FCD5N60 / FCU5N60 Rev. C2 10 3 www.fairchildsemi.com FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature RDS(ON), (Normalized) 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 2.3 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 Figure 9. Maximum Safe Operating Area 2 4 10 us 1 ID, Drain Current [A] ID, Drain Current [A] 200 5 10 100 us 0 10 DC 1 ms 10 ms 100 ms * Notes : o 1. TC = 25 C -1 150 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 10 100 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] 10 50 o o 3 2 1 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] D = 0 .5 10 0 0 .2 * N o te s : o 1 . Z θ JC (t) = 2 .3 C /W M a x. 0 .1 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 10 3 . T J M - T C = P D M * Z θ J C (t) 0 .0 2 -1 PDM 0 .0 1 θJC o ZθJC(t), Thermal Response Response [[oC/W] ZθJC Thermal C/W] Z(t),(t), Thermal Response Figure 11. Transient Thermal Response Curve t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ©2008 Fairchild Semiconductor Corporation FCD5N60 / FCU5N60 Rev. C2 4 www.fairchildsemi.com FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET Typical Performance Characteristics (Continued) 50KΩ 200nF 12V FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FCD5N60 / FCU5N60 Rev. C2 5 www.fairchildsemi.com FCD5N60 / FCU5N60 — N-Channel SuperFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FCD5N60 / FCU5N60 Rev. C2 6 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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