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FCD4N60
N 沟道 SuperFET® MOSFET
600 V, 3.9 A, 1.2
特性
说明
• 650 V @TJ = 150 °C
SuperFET® MOSFET 是飞兆半导体第一代利用电荷平衡技术实
现 出色 低 导通 电 阻和 更 低栅 极 电荷 性 能的 高 压超 级 结 (SJ)
MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓
越的开关性能、 dv/dt 额定值和更高雪崩能量。因此, SuperFET
MOSFET 非常适合开关电源应用,如功率因数校正 (PFC)、服务
器 / 电信电源、平板电视电源、 ATX 电源及工业电源应用。
• Typ.RDS(on) = 1.0
• 超低栅极电荷 (典型值 Qg = 12.8 nC)
• 低有效输出电容 (典型值 Coss.eff=32 pF)
• 100% 经过雪崩测试
• 符合 RoHS 标准
应用
• 照明
• AC-DC 电源
• 光伏逆变器
D
D
G
S
G
D-PAK
S
MOSFET 最大额定值 TC =25°C 除非另有说明。
FCD4N60TM
600
符号
VDSS
漏极-源极电压
参数
ID
漏极电流
- 连续 (TC=25°C)
3.9
- 连续 (TC=100°C)
2.5
IDM
漏极电流
- 脉冲
VGSS
栅极-源极电压
EAS
单脉冲雪崩能量
(说明 1)
11.7
单位
V
A
A
±30
V
(说明 2)
128
mJ
IAR
雪崩电流
(说明 1)
3.9
A
EAR
重复雪崩能量
(说明 1)
5.0
mJ
dv/dt
二极管恢复 dv/dt 峰值
(说明 3)
4.5
V/ns
PD
功耗
TJ, TSTG
工作和存储温度范围
用于焊接的最高引脚温度,
距离外壳 1/8”,持续 5 秒
TL
(TC = 25°C)
50
W
- 超过 25°C 时降低
0.4
W/°C
-55 至 +150
°C
300
°C
FCD4N60TM
热性能
RJC
符号
结至外壳热阻最大值
2.5
单位
°C/W
RJA
结至环境热阻最大值
83
°C/W
©2008 飞兆半导体公司
FCD4N60 Rev. C1
参数
1
www.fairchildsemi.com
FCD4N60 — N 沟道 SuperFET® MOSFET
2014 年 2 月
器件标识
FCD4N60
器件
FCD4N60TM
封装
D-PAK
卷尺寸
380mm
带宽
16m
数量
2500
电气特性 TC =25°C 除非另有说明。
符号
参数
测试条件
最小值
典型值
最大值
单位
关断特性
BVDSS
BVDSS
/ TJ
BVDS
VGS = 0 V, ID = 250 μA, TC = 25°C
600
-
-
V
VGS = 0 V, ID = 250 μA, TC = 150°C
-
650
-
V
击穿电压温度系数
ID=1 mA,以 25°C 为参考
-
0.6
-
V/°C
漏源极雪崩击穿电压
VGS = 0 V, ID = 3.9 A
-
700
-
V
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, TC = 125°C
-
-
10
-
-
±100
3.0
-
5.0
V
-
1.0
1.2
-
3.2
-
S
漏极-源极击穿电压
IDSS
零栅极电压漏极电流
IGSS
栅极 - 体漏电流
VGS = ±30 V, VDS = 0 V
VGS(th)
RDS(on)
栅极阈值电压
VGS = VDS, ID = 250 A
漏极至源极静态导通电阻
gFS
正向跨导
VGS = 10 V, ID = 2.0 A
VDS = 40 V, ID = 2.0 A
A
nA
导通特性
动态特性
Ciss
输入电容
Coss
输出电容
Crss
反向传输电容
Coss
Cosseff.
VDS = 25 V, VGS = 0 V
f = 1.0 MHz
-
415
540
pF
-
210
275
pF
-
19.5
-
pF
输出电容
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
-
12
16
pF
有效输出电容
VDS = 0 V 至 400 V, VGS = 0 V
-
32
-
pF
-
16
45
ns
-
45
100
ns
-
36
85
ns
-
30
70
ns
-
12.8
16.6
nC
开关特性
td(on)
导通延迟时间
tr
开通上升时间
td(off)
关断延迟时间
tf
关断下降时间
Qg(tot)
10 V 的栅极电荷总量
Qgs
栅极 - 源极栅极电荷
Qgd
栅极 - 漏极 “ 米勒 ” 电荷
VDD = 300 V, ID = 3.9 A
RG = 25
(说明 4)
VDS = 480 V, ID = 3.9 A,
VGS = 10 V
(说明 4)
-
2.4
-
nC
-
7.1
-
nC
漏极 - 源极二极管特性
IS
漏极 - 源极二极管最大正向连续电流
-
-
3.9
A
ISM
漏极 - 源极二极管最大正向脉冲电流
-
-
11.7
A
VSD
漏极 - 源极二极管正向电压
VGS = 0 V, ISD = 11 A
-
-
1.4
V
trr
反向恢复时间
-
277
-
ns
Qrr
反向恢复电荷
VGS = 0 V, ISD = 11 A
dIF/dt = 100 A/s
-
2.07
-
C
注意:
1. 重复额定值:脉冲宽度受限于最大结温
2. IAS=1.9 A, VDD=50 V, RG=25 ,开始 TJ=25°C
3. ISD 3.9 A, di/dt 200 A/s, VDD BVDSS,开始 TJ=25°C
4. 本质上独立于工作温度的典型特性
©2008 飞兆半导体公司
FCD4N60 Rev. C1
2
www.fairchildsemi.com
FCD4N60 — N 沟道 SuperFET® MOSFET
封装标识与定购信息
图 1. 导通区域特性
VGS
1
10
Top :
15.0 V
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID , Drain Current [A]
ID, Drain Current [A]
10
图 2. 传输特性
1
* Notes :
1. 250s Pulse Test
o
150 C
0
10
o
25 C
o
-55 C
* Note
1. VDS = 40V
o
2. TC = 25 C
0.1
2. 250s Pulse Test
-1
0.1
1
10
10
2
4
VDS, Drain-Source Voltage [V]
图 3. 导通电阻变化与漏极电流和栅极电压的关系
10
4
3
VGS = 10V
2
VGS = 20V
1
1
10
0
10
o
150 C
o
25 C
* Notes :
1. VGS = 0V
o
2. 250s Pulse Test
* Note : TJ = 25 C
0
0.0
-1
2.5
5.0
7.5
10.0
10
12.5
0.2
ID, Drain Current [A]
0.4
0.6
VDS = 120V
VGS, Gate-Source Voltage [V]
Crss = Cgd
1000
800
* Notes :
1. VGS = 0 V
Coss
2. f = 1 MHz
Ciss
400
200
Crss
10
VDS = 300V
10
VDS = 480V
8
6
4
2
* Note : ID = 3.9A
0
1
0
5
10
15
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2008 飞兆半导体公司
FCD4N60 Rev. C1
1.2
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
0
0
10
1.0
图 6. 栅极电荷特性
1200
600
0.8
VSD , Source-Drain Voltage [V]
图 5. 电容特性
Capacitance [pF]
8
图 4. 体二极管正向电压变化与源电流和温度的关系
IDR , Reverse Drain Current [A]
RDS(ON) [],Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
3
www.fairchildsemi.com
FCD4N60 — N 沟道 SuperFET® MOSFET
典型性能特征
图 7. 击穿电压变化与温度的关系
图 8. 导通电阻变化与温度的关系
3.0
RDS(ON), (Normalized)
1.1
1.0
*Notes :
1. VGS = 0 V
0.9
2. ID = 250A
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
*Notes :
1. VGS = 10 V
0.5
2. ID = 2.0 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
TJ, Junction Temperature [ C
50
100
150
200
o
TJ, Junction Temperature [ C
图 9. 最大安全工作区
图 10. 最大漏极电流与壳温的关系
4
Operation in This Area
is Limited by R DS(on)
10 us
ID, Drain Current [A]
3
ID, Drain Current [A]
1
10
100 us
1 ms
10 ms
0
10
DC
* Notes :
o
1. TC = 25 C
2
1
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
10
1
2
10
0
25
3
10
10
50
75
100
125
150
o
TC, Case Temperature [ C]
VDS, Drain-Source Voltage [V]
10
D = 0 .5
0
0 .2
* N o te s :
o
1 . Z J C (t) = 2 .5 C /W M a x.
0 .1
2 . D u ty F a c to r, D = t 1 /t 2
0 .0 5
10
3 . T J M - T C = P D M * Z J C (t)
0 .0 2
0 .0 1
-1
PDM
t1
JC
ZJC
热响应
[oC/W]
Z (t)(t),
Thermal
Response
图 11. 瞬态热响应曲线
sin g le p u lse
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
©2008 飞兆半导体公司
FCD4N60 Rev. C1
4
www.fairchildsemi.com
FCD4N60 — N 沟道 SuperFET® MOSFET
典型性能特性 (接上页)
FCD4N60 — N 沟道 SuperFET® MOSFET
图 12. 栅极电荷测试电路与波形
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG= 常量
3mA
Charge
图 13. 阻性开关测试电路与波形
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
图 14. 非箝位感性开关测试电路与波形
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
tp
©2008 飞兆半导体公司
FCD4N60 Rev. C1
VDS (t)
VDD
DUT
tp
5
Time
www.fairchildsemi.com
FCD4N60 — N 沟道 SuperFET® MOSFET
图 15. 峰值二极管恢复 dv/dt 测试电路与波形
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2008 飞兆半导体公司
FCD4N60 Rev. C1
6
www.fairchildsemi.com
FCD4N60 — N 沟道 SuperFET® MOSFET
机械尺寸
TO-252 3L (DPAK)
图 16. TO252 (D-PAK),模塑, 3 引脚,选项 AA&AB
封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 /
或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003
尺寸 (单位为毫米)
©2008 飞兆半导体公司
FCD4N60 Rev. C1
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2008 飞兆半导体公司
FCD4N60 Rev. C1
8
www.fairchildsemi.com
FCD4N60 — N 沟道 SuperFET® MOSFET
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