FCP165N65S3R0

FCP165N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. www.onsemi.com VDSS RDS(ON) MAX ID MAX 650 V 165 mW @ 10 V 19 A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 140 mW Ultra Low Gate Charge (Typ. Qg = 39 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF) 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant G S N-Channel MOSFET Applications • • • • G Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter D S TO−220−3LD CASE 340AT MARKING DIAGRAM $Y&Z&3&K FCP165 N65S3R0 $Y &Z &3 &K FCP165N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 7 1 Publication Order Number: FCP165N65S3R0/D FCP165N65S3R0 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 19 A Continuous (TC = 100°C) 12.3 Pulsed (Note 1) IDM Drain Current 47.5 A EAS Single Pulsed Avalanche Energy (Note 2) 87 mJ IAS Avalanche Current (Note 2) 2.7 A EAR Repetitive Avalanche Energy (Note 1) 1.54 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation TJ, TSTG TL (TC = 25°C) 154 W Derate Above 25°C 1.23 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.7 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 9.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit _C/W RqJC Thermal Resistance, Junction to Case, Max. 0.81 RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping FCP165N65S3R0 FCP165N65S3R0 TO−220−3LD (Pb-Free / Halogen Free) 50 Units / Tube www.onsemi.com 2 FCP165N65S3R0 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.64 V/_C 1 mA ±100 nA 4.5 V 165 mW 0.85 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.44 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 9.5 A 140 Forward Transconductance VDS = 20 V, ID = 9.5 A 12 S 1500 pF 35 pF gFS 2.5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 341 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 49 pF Total Gate Charge at 10 V VDS = 400 V, ID = 9.5 A, VGS = 10 V (Note 4) 39 nC 11 nC 16 nC f = 1 MHz 0.5 W VDD = 400 V, ID = 9.5 A, VGS = 10 V, Rg = 4.7 W (Note 4) 17 ns 15 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 44 ns Turn-Off Fall Time 5 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current 19 A ISM Maximum Pulsed Source to Drain Diode Forward Current 47.5 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 9.5 A 1.2 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 9.5 A, dIF/dt = 100 A/ms 339 ns 5.8 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCP165N65S3R0 TYPICAL PERFORMANCE CHARACTERISTICS 50 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 1 0.2 ID, Drain Current [A] ID, Drain Current [A] 50 *Notes: 1. 250 ms Pulse Test 2. TC = 25°C 1 10 VDS, Drain−Source Voltage [V] 10 150°C 25°C −55°C 1 20 *Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 3 4 Figure 1. On-Region Characteristics 100 *Note: TC = 25°C 0.4 VGS = 10 V 0.2 VGS = 20 V 0.0 0 10 20 30 40 10 *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 1 150°C 25°C 0.1 −55°C 0.01 1E−3 0.0 50 ID, Drain Current [A] 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 10 VGS, Gate−Source Voltage [V] 10000 Capacitances [pF] 9 Figure 2. Transfer Characteristics IS, Reverse Drain Current [A] RDS(ON) , Drain−Source On−Resistance [W ] 0.6 5 6 7 8 VGS, Gate−Source Voltage [V] Ciss 1000 100 Coss *Notes: 1. VGS = 0 V 2. f = 1 MHz 10 1 Ciss = Cgs + Cgd (Cds = Shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 Crss 100 *Note: ID = 9.5 A 8 VDS = 130 V VDS = 400 V 6 4 2 0 1000 1.5 VDS, Drain−Source Voltage [V] Figure 5. Capacitance Characteristics 0 10 20 30 Qg, Total Gate Charge [nC] 40 Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCP165N65S3R0 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3.0 *Notes: 1. VGS = 0 V 2. ID = 10 mA 1.1 RDS(on), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 0.8 −50 0 50 100 2.5 2.0 1.5 1.0 0.5 0.0 150 *Notes: 1. VGS = 10 V 2. ID = 9.5 A TJ, Junction Temperature [oC] −50 0 50 100 150 TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variant vs. Temperature 20 100 30 ms ID, Drain Current [A] ID, Drain Current [A] 100 ms 10 1 ms 10 ms DC 1 Operation in This Area is Limited by RDS(on) *Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 0.1 0.01 1 10 100 VDS, Drain−Source Voltage [V] 15 10 5 0 25 1000 Figure 9. Maximum Safe Operation Area Figure 10. Maximum Drain Current vs. Case Temperature 8 EOSS [m J] 6 4 2 0 0 130 260 390 520 VDS, Drain to Source Voltage [V] 50 75 100 125 TC, Case Temperature [ oC] 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 150 FCP165N65S3R0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2 1 0.1 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 −5 10 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 0.81 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE −4 10 −3 10 −2 10 −1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 0 10 1 10 FCP165N65S3R0 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCP165N65S3R0 + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220−3LD CASE 340AT ISSUE A DATE 03 OCT 2017 Scale 1:1 DOCUMENT NUMBER: DESCRIPTION: 98AON13818G TO−220−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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