FCPF380N60-F152

FCPF380N60_F152 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. • Max. RDS(on) = 380 mΩ • Ultra low gate charge (typ. Qg = 30 nC) • Low effective output capacitance (typ. Coss.eff = 95 pF) • 100% avalanche tested Aplications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply D G GD S TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FCPF380N60_F152 600 -DC Unit V ±20 -AC (f>1HZ) -Continuous (TC = 25oC) 10.2* -Continuous (TC = 100oC) 6.4* A IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 2.3 A EAR Repetitive Avalanche Energy (Note 1) 1.06 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt - Pulsed V ±30 MOSFET dv/dt 30.6* A (Note 2) 211.6 mJ 20 V/ns 100 (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC 31 W 0.25 W/oC -55 to +150 oC 300 oC FCPF380N60_F152 Unit *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2013 Fairchild Semiconductor Corporation FCPF380N60_F152 Rev. C0 4 1 o C/W www.fairchildsemi.com FCPF380N60_F152 — N-Channel MOSFET July 2013 Device Marking FCPF380N60 Device FCPF380N60_F152 Package TO-220F Eco Status Green Packaging Type Tube Quantity 50 For Fairchild's definition of "green" Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0V, ID = 10mA, TJ = 25°C 600 - - V VGS = 0V, ID = 10mA, TJ = 150°C 650 - - V - 0.6 - V/oC VGS = 0V, ID = 10A - 700 - V VDS = 480V, VGS = 0V - - 10 μA Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage ID = 10mA, Referenced to 25oC IDSS Zero Gate Voltage Drain Current VDS = 480V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 - 3.5 V - 0.33 0.38 Ω - 11 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 5A VDS = 20V, ID = 5A Dynamic Characteristics - 1250 1665 pF - 905 1205 pF - 45 60 pF - 23 - pF VDS = 0V to 480V, VGS = 0V - 95 - pF VDS = 380V, ID = 5A VGS = 10V - 30 40 nC - 5 - nC - 10 - nC - 1 - Ω - 14 38 ns - 7 24 ns - 45 100 ns - 6 22 ns Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz Coss eff. Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 25V, VGS = 0V f = 1MHz (Note 4) f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 5A VGS = 10V, R = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30.6 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5A - - 1.2 V trr Reverse Recovery Time 240 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5A dIF/dt = 100A/μs - 2.7 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 5.1A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2013 Fairchild Semiconductor Corporation FCPF380N60_F152 Rev. C0 2 www.fairchildsemi.com FCPF380N60_F152 — N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 50 1 o 150 C 10 o 25 C *Notes: 1. 250μs Pulse Test o -55 C o 2. TC = 25 C 0.1 0.1 1 1 VDS, Drain-Source Voltage[V] 10 3 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 IS, Reverse Drain Current [A] 1.0 0.8 0.6 VGS = 10V 0.4 VGS = 20V o 150 C o 25 C 10 *Notes: 1. VGS = 0V 2. 250μs Pulse Test o *Note: TC = 25 C 0.2 0 5 10 15 20 ID, Drain Current [A] 25 1 0.3 30 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 100 1 0.1 0.1 1.5 10 1000 10 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.2 RDS(ON) [Ω], Drain-Source On-Resistance 4 5 6 7 VGS, Gate-Source Voltage[V] Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 100 VDS, Drain-Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FCPF380N60_F152 Rev. C0 VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 5A 0 1000 0 3 9 18 27 Qg, Total Gate Charge [nC] 36 www.fairchildsemi.com FCPF380N60_F152 — N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 5A 0.5 -80 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature 160 Figure 10. Eoss vs. Drain to Source Voltage Switching Capability 100 6 10μs 5 100μs 1ms 10 4 10ms EOSS, [μJ] ID, Drain Current [A] -40 0 40 80 120 o TJ, Junction Temperature [ C] DC 1 Operation in This Area is Limited by R DS(on) 2 *Notes: 0.1 3 o 1. TC = 25 C 1 o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 1000 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 Figure 11. Maximum Drain Current ID, Drain Current [A] 12 9 6 3 0 25 50 75 100 125 o TC, Case Temperature [ C] ©2013 Fairchild Semiconductor Corporation FCPF380N60_F152 Rev. C0 150 4 www.fairchildsemi.com FCPF380N60_F152 — N-Channel MOSFET Typical Performance Characteristics (Continued) FCPF380N60_F152 — N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 0.05 0.1 PDM 0.02 t1 0.01 t2 *Notes: o 1. ZθJC(t) = 4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 ©2013 Fairchild Semiconductor Corporation FCPF380N60_F152 Rev. C0 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FCPF380N60_F152 — N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FCPF380N60_F152 Rev. C0 6 www.fairchildsemi.com FCPF380N60_F152 — N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2013 Fairchild Semiconductor Corporation FCPF380N60_F152 Rev. C0 7 www.fairchildsemi.com FCPF380N60_F152 — N-Channel MOSFET Mechanical Dimensions TO-220F * Front/Back Side Isolation Voltage : AC 2500V TO-220, MOLDED, 3LD, FULL PACK, EIAJ SC91 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-0A3 ©2013 Fairchild Semiconductor Corporation FCPF380N60_F152 Rev. C0 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2013 Fairchild Semiconductor Corporation FCPF380N60_F152 Rev. C0 9 www.fairchildsemi.com FCPF380N60_F152 — N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS™ Sync-Lock™ 2Cool™ ® F-PFS™ AccuPower™ ®* FRFET® PowerTrench® AX-CAP®* Global Power ResourceSM PowerXS™ BitSiC™ TinyBoost™ Green Bridge™ Programmable Active Droop™ Build it Now™ TinyBuck™ Green FPS™ QFET® CorePLUS™ TinyCalc™ QS™ Green FPS™ e-Series™ CorePOWER™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ GTO™ RapidConfigure™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ DEUXPEED® ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® and Better™ SignalWise™ TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™