FCPF190N60_F152

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Description N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 199 mΩ • Ultra low gate charge (typ. Qg = 57 nC) • Low effective output capacitance (typ. Coss.eff = 160 pF) • 100% avalanche tested SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II MOSFET is suitable for various AC/DC power conversion for system minia-turization and higher efficiency. Aplications • LCD / LED / PDP TV Lighting • Solar Inverter • AC-DC Power Supply D GD S TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current S Parameter FCPF190N60-F152 600 -DC -AC ±20 (f >1Hz) V ±30 -Continuous (TC = 25oC) 20.2* -Continuous (TC = 100oC) 12.7* A IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt - Pulsed Unit V MOSFET dv/dt (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC (Note 1) 60.6* A (Note 2) 400 mJ 20 V/ns 100 V/ns 39 W 0.31 W/oC -55 to +150 oC 300 oC FCPF190N60-F152 Unit *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 3.2 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2013 Semiconductor Components Industries, LLC. September-2017, Rev. 3 o C/W Publication Order Number: FCPF190N60-F152/D FCPF190N60-F152 — N-Channel MOSFET FCPF190N60-F152 Device Marking FCPF190N60 Device FCPF190N60-F152 Package TO-220F Eco Status Green Packaging Type Tube Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 10mA, TJ = 25°C 600 - - V VGS = 0V, ID = 10mA, TJ = 150°C 650 - - V - 0.67 - V/oC VGS = 0V, ID = 20A - 700 - V VDS = 480V, VGS = 0V - - 10 μA ID = 10mA, Referenced to 25oC IDSS Zero Gate Voltage Drain Current VDS = 480V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 - 3.5 V - 0.17 0.199 Ω - 21 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 10A VDS = 20V, ID = 10A Dynamic Characteristics - 2220 2950 pF - 1630 2165 pF - 85 128 pF - 42 - pF VDS = 0V to 480V, VGS = 0V - 160 - pF VDS = 380V, ID = 10A VGS = 10V - 57 74 nC - 9 - nC - 21 - nC - 1 - Ω - 20 50 ns - 10 30 ns - 64 138 ns - 5 20 ns Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz Coss eff. Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 25V, VGS = 0V f = 1MHz (Note 4) f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 10A VGS = 10V, Rg = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 10A - - 1.2 V trr Reverse Recovery Time 280 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 10A dIF/dt = 100A/μs - 3.8 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics www.onsemi.com 2 FCPF190N60-F152 — N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 50 o 150 C 10 o 25 C o -55 C 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.3 0.1 1 1 VDS, Drain-Source Voltage[V] 10 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS, Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 IS, Reverse Drain Current [A] 0.5 RDS(ON) [Ω], Drain-Source On-Resistance 3 0.4 0.3 VGS = 10V 0.2 VGS = 20V o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.1 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 10000 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.5 0.1 1 10 100 VDS, Drain-Source Voltage [V] VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 10A 0 600 www.onsemi.com 3 0 12 24 36 48 Qg, Total Gate Charge [nC] 60 FCPF190N60-F152 — N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 10A 0.5 0.0 -80 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature 2.5 -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Eoss vs. Drain to Source Voltage Switching Capability 10 100 ID, Drain Current [A] 10μs 8 100μs 10 10ms 1 Operation in This Area is Limited by R DS(on) 0.1 EOSS, [μJ] 1ms DC 6 4 *Notes: o 2 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 0.1 1 10 100 VDS, Drain-Source Voltage [V] 0 1000 Figure 11. Maximum Drain Current 25 ID, Drain Current [A] 20 15 10 5 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 www.onsemi.com 4 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 FCPF190N60-F152 — N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 *Notes: 0.01 t2 o 1. ZθJC(t) = 3.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] www.onsemi.com 5 10 100 FCPF190N60-F152 — N-Channel MOSFET Typical Performance Characteristics (Continued) Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 FCPF190N60-F152 — N-Channel MOSFET Gate Charge Test Circuit & Waveform FCPF190N60-F152 — N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 7 VDD TO-220F * Front/Back Side Isolation Voltage : AC 2500V TO-220, MOLDED, 3LD, FULL PACK, EIAJ SC91 www.onsemi.com 8 FCPF190N60-F152 — N-Channel MOSFET Mechanical Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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