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Description
N-Channel SuperFET® II MOSFET
600 V, 20.2 A, 199 mΩ
Features
• 650 V @TJ = 150°C
• Max. RDS(on) = 199 mΩ
• Ultra low gate charge (typ. Qg = 57 nC)
• Low effective output capacitance (typ. Coss.eff = 160 pF)
• 100% avalanche tested
SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family
that is utilizing charge balance technology for outstanding low
on-resis-tance and lower gate charge performance. This
advanced tech-nology is tailored to minimize conduction loss,
provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET®II MOSFET is suitable for various
AC/DC power conversion for system minia-turization and
higher efficiency.
Aplications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
D
GD S
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
S
Parameter
FCPF190N60-F152
600
-DC
-AC
±20
(f >1Hz)
V
±30
-Continuous (TC = 25oC)
20.2*
-Continuous (TC = 100oC)
12.7*
A
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
4.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
2.1
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
- Pulsed
Unit
V
MOSFET dv/dt
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate above 25oC
(Note 1)
60.6*
A
(Note 2)
400
mJ
20
V/ns
100
V/ns
39
W
0.31
W/oC
-55 to +150
oC
300
oC
FCPF190N60-F152
Unit
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
3.2
RθCS
Thermal Resistance, Case to Heat Sink (Typical)
0.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2013 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
o
C/W
Publication Order Number:
FCPF190N60-F152/D
FCPF190N60-F152 — N-Channel MOSFET
FCPF190N60-F152
Device Marking
FCPF190N60
Device
FCPF190N60-F152
Package
TO-220F
Eco Status
Green
Packaging Type
Tube
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 10mA, TJ = 25°C
600
-
-
V
VGS = 0V, ID = 10mA, TJ = 150°C
650
-
-
V
-
0.67
-
V/oC
VGS = 0V, ID = 20A
-
700
-
V
VDS = 480V, VGS = 0V
-
-
10
μA
ID = 10mA, Referenced to 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 480V, TC = 125oC
-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
2.5
-
3.5
V
-
0.17
0.199
Ω
-
21
-
S
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 10A
VDS = 20V, ID = 10A
Dynamic Characteristics
-
2220
2950
pF
-
1630
2165
pF
-
85
128
pF
-
42
-
pF
VDS = 0V to 480V, VGS = 0V
-
160
-
pF
VDS = 380V, ID = 10A
VGS = 10V
-
57
74
nC
-
9
-
nC
-
21
-
nC
-
1
-
Ω
-
20
50
ns
-
10
30
ns
-
64
138
ns
-
5
20
ns
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 380V, VGS = 0V, f = 1MHz
Coss eff.
Effective Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
VDS = 25V, VGS = 0V
f = 1MHz
(Note 4)
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380V, ID = 10A
VGS = 10V, Rg = 4.7Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
20.2
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
60.6
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
-
-
1.2
V
trr
Reverse Recovery Time
280
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 10A
dIF/dt = 100A/μs
-
3.8
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
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2
FCPF190N60-F152 — N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
VGS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
ID, Drain Current[A]
ID, Drain Current[A]
50
o
150 C
10
o
25 C
o
-55 C
1
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
0.3
0.1
1
1
VDS, Drain-Source Voltage[V]
10
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
7
VGS, Gate-Source Voltage[V]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
IS, Reverse Drain Current [A]
0.5
RDS(ON) [Ω],
Drain-Source On-Resistance
3
0.4
0.3
VGS = 10V
0.2
VGS = 20V
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
0.1
0
10
20
30
ID, Drain Current [A]
40
1
0.2
50
Figure 5. Capacitance Characteristics
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
1.4
Figure 6. Gate Charge Characteristics
10
10000
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
1000
Coss
100
*Note:
1. VGS = 0V
2. f = 1MHz
10
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.5
0.1
1
10
100
VDS, Drain-Source Voltage [V]
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
*Note: ID = 10A
0
600
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3
0
12
24
36
48
Qg, Total Gate Charge [nC]
60
FCPF190N60-F152 — N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 10mA
0.8
-80
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 10A
0.5
0.0
-80
160
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
2.5
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
160
Figure 10. Eoss vs. Drain to Source Voltage
Switching Capability
10
100
ID, Drain Current [A]
10μs
8
100μs
10
10ms
1
Operation in This Area
is Limited by R DS(on)
0.1
EOSS, [μJ]
1ms
DC
6
4
*Notes:
o
2
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
0.1
1
10
100
VDS, Drain-Source Voltage [V]
0
1000
Figure 11. Maximum Drain Current
25
ID, Drain Current [A]
20
15
10
5
0
25
50
75
100
125
o
TC, Case Temperature [ C]
150
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4
0
100
200
300
400
500
VDS, Drain to Source Voltage [V]
600
FCPF190N60-F152 — N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
Thermal Response [ZθJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
*Notes:
0.01
t2
o
1. ZθJC(t) = 3.2 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
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5
10
100
FCPF190N60-F152 — N-Channel MOSFET
Typical Performance Characteristics (Continued)
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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6
FCPF190N60-F152 — N-Channel MOSFET
Gate Charge Test Circuit & Waveform
FCPF190N60-F152 — N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
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7
VDD
TO-220F
* Front/Back Side Isolation Voltage : AC 2500V
TO-220, MOLDED, 3LD, FULL PACK, EIAJ SC91
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8
FCPF190N60-F152 — N-Channel MOSFET
Mechanical Dimensions
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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