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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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FCD3400N80Z / FCU3400N80Z
N-Channel SuperFET® II MOSFET
800 V, 2 A, 3.4 Ω
Features
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• RDS(on) = 2.75 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 7.4 nC)
• Low Eoss (Typ. 0.9 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 41 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
• AC - DC Power Supply
• LED Lighting
D
D
G
S
D-PAK
G
D
G
S
I-PAK
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
FCD3400N80Z
FCU3400N80Z
800
Parameter
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
- DC
Unit
V
±20
- AC
(f > 1 Hz)
- Continuous (TC = 25oC)
2.0
- Continuous (TC = 100oC)
A
1.2
IDM
Drain Current
(Note 1)
4.0
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
12.8
mJ
IAR
Avalanche Current
(Note 1)
0.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.32
mJ
dv/dt
- Pulsed
V
±30
MOSFET dv/dt
100
Peak Diode Recovery dv/dt
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
- Derate Above 25oC
V/ns
20
32
W
0.26
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
FCD3400N80Z
FCU3400N80Z
Parameter
RθJC
Thermal Resistance, Junction to Case, Max.
3.9
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
1
Unit
o
C/W
www.fairchildsemi.com
FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET
March 2015
Part Number
FCD3400N80Z
Top Mark
FCD340080Z
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
FCU3400N80Z
FCU340080Z
IPAK
Tube
N/A
N/A
75 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
800
-
-
V
-
0.9
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25°C
o
ID = 1 mA, Referenced to 25 C
VDS = 800 V, VGS = 0 V
-
-
25
VDS = 640 V, VGS = 0 V,TC = 125oC
-
-
250
VGS = ±20 V, VDS = 0 V
-
-
±10
2.5
-
4.5
V
-
2.75
3.4
Ω
-
2
-
S
μA
μA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 0.2 mA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10 V, ID = 1 A
VDS = 20 V, ID = 1 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
VDS = 100 V, VGS = 0 V,
f = 1 MHz
-
299
400
pF
-
12.7
15
pF
-
0.36
-
pF
Output Capacitance
VDS = 480 V, VGS = 0 V, f = 1 MHz
-
6.2
-
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 480 V, VGS = 0 V
-
41
-
pF
Qg(tot)
Total Gate Charge at 10V
7.4
9.6
nC
Gate to Source Gate Charge
VDS = 640 V, ID = 2 A,
VGS = 10 V
-
Qgs
-
1.6
-
nC
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
(Note 4)
-
3.1
-
nC
f = 1 MHz
-
3.2
-
Ω
-
10
30
ns
VDD = 400 V, ID = 2 A,
VGS = 10 V, Rg = 4.7 Ω
-
6.4
23
ns
-
22.7
55
ns
-
14
38
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
1.6
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
3.8
A
VGS = 0 V, ISD = 2 A
-
-
1.2
V
VGS = 0 V, ISD = 2 A,
dIF/dt = 100 A/μs
-
119
-
ns
-
868
-
nC
VSD
Drain to Source Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 0.4 A, RG = 25 Ω, starting TJ = 25°C
3. ISD ≤ 2 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C
4. Essentially independent of operating temperature typical characteristic.
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
2
www.fairchildsemi.com
FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain Current[A]
ID, Drain Current[A]
5
1
o
o
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
1
10
VDS, Drain-Source Voltage[V]
0.1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
25 C
-55 C
*Notes:
1. 250μs Pulse Test
0.3
o
150 C
1
3
4
5
6
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10
6
o
5
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
*Note: TC = 25 C
4
VGS = 10V
3
VGS = 20V
2
1
0
1
2
3
ID, Drain Current [A]
o
o
25 C
0.1
*Notes:
1. VGS = 0V
0.01
0.2
4
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Ciss
Coss
10
1
0.1
0.1
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
1
10
100
VDS, Drain-Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
1.2
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
100
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10000
1000
150 C
1
6
4
2
0
1000
3
VDS = 160V
VDS = 400V
VDS = 640V
8
*Note: ID = 2A
0
2
4
6
Qg, Total Gate Charge [nC]
8
www.fairchildsemi.com
FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
*Notes:
1. VGS = 0V
2. ID = 1mA
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.5
*Notes:
1. VGS = 10V
2. ID = 1A
2.0
1.5
1.0
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
10
2.0
100μs
ID, Drain Current [A]
ID, Drain Current [A]
10μs
1
1ms
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
1. TC = 25 C
1.5
1.0
0.5
o
0.01
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0.0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
2.5
EOSS, [μJ]
2.0
1.5
1.0
0.5
0
0
200
400
600
VDS, Drain to Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
800
4
www.fairchildsemi.com
FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
0.5
o
ZθJC(t), Thermal Response [ C/W]
5
1
0.2
PDM
0.1
t1
0.05
0.02
0.1
o
1. ZθJC(t) = 3.9 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
Single pulse
0.04
-5
10
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
t2
*Notes:
-4
10
-3
-2
-1
10
10
10
t1, Rectangular Pulse Duration [sec]
5
0
10
1
10
www.fairchildsemi.com
FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET
IG = const.
Fig 13. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Resistive Switching Test Circuit & Waveforms
VGS
Fig 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
6
www.fairchildsemi.com
FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Fig 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
7
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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