FCU850N80Z

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCD850N80Z / FCU850N80Z N- 沟道 SuperFET® II MOSFET 800 V, 6 A, 850 mΩ 特性 描述 • 典型值 RDS(on) = 710 mΩ ( 典型值 ) SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低 导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓越的开关性 能、 dv/dt 额定值和更高雪崩能量。此外，内部栅源极 ESD 二极 管允 许 经受 超 过 2 kV HBM 冲 击 压力。因 此， SuperFET II MOSFET 非常适合功率开关应用，如音频、笔记本适配器、照 明、 ATX 电源和工业电源应用。 • 超低栅极电荷 （典型值 Qg = 22 nC） • 低 Eoss （典型值 2.3 uJ @ 400 V) • 低有效输出电容 （典型值 Coss(eff.)= 106 pF) • 100% 经过雪崩测试 • 符合 RoHS 标准 • 增强的 ESD 能力 应用 • AC-DC 电源 • LED 照明 D D G S D-PAK I-PAK G D G S 最大绝对额定值 TC = 25°C 除非另有说明。 符号 VDSS S FCD850N80Z FCU850N80Z 800 参数 漏极－源极电压 - DC ±20 单位 V VGSS 栅极－源极电压 ID 漏极电流 - 连续 (TC = 25°C) 6 - 连续 (TC = 100°C) 3.8 IDM 漏极电流 - 脉冲 （注 1） 18 A EAS 单脉冲雪崩能量 （注 2） 114 mJ IAR 雪崩电流 （注 1） 1.2 A EAR 重复雪崩能量 MOSFET dv/dt （注 1） 0.284 mJ 二极管恢复 dv/dt 峰值 （注 3） dv/dt - AC (f > 1 Hz) 100 20 V A V/ns (TC = 25°C) 75 Ω - 高于 25°C 的功耗系数 0.6 W/°C -55 至 +150 300 °C PD 功耗 TJ, TSTG 工作和存储温度范围 用于焊接的最大引脚温度， 距离外壳 1/8”，持续 5 秒 TL ±30 °C 热性能 符号 FCD850N80Z FCU850N80Z 参数 RθJC 结至外壳热阻最大值 1.65 RθJA 结至环境热阻最大值 100 © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 1 单位 °C/W www.fairchildsemi.com FCD850N80Z / FCU850N80Z — N- 沟道 SuperFET® II MOSFET 2015 年 4 月 器件编号 FCD850N80Z 顶标 FCD850N80Z 封装 DPAK 包装方法 卷带 卷尺寸 330 mm 带宽 16 mm 数量 2500 颗 FCU850N80Z FCU850N80Z IPAK 塑料管 不适用 不适用 75 个 电气特性 TC = 25°C 除非另有说明。 符号 参数 测试条件 最小值 典型值 最大值 单位 800 - - V - 0.8 - V/°C 关断特性 BVDSS ΔBVDSS / ΔTJ 漏极－源极击穿电压 击穿电压温度系数 IDSS 零栅极电压漏极电流 IGSS VGS = 0 V, ID = 1 mA, TJ = 25°C ID=1 mA，参考 25°C 数值 VDS = 800 V, VGS = 0 V - - 25 VDS = 640 V, VGS = 0 V, TC = 125°C - - 250 栅极－体漏电流 VGS = ±20 V, VDS = 0 V - - ±10 VGS(th) RDS(on) 栅极阈值电压 VGS = VDS, ID = 0.6 mA 2.5 - 4.5 V 漏极至源极静态导通电阻 VGS = 10 V, ID = 3 A - 710 850 mΩ gFS 正向跨导 VDS = 20 V, ID = 3 A - 3.5 - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 990 1315 pF - 28 37 pF - 0.74 - pF VDS = 480 V, VGS = 0 V, f = 1 MHz - 15 - pF 106 - pF μA μA 导通特性 动态特性 Ciss Coss Crss Coss 输入电容 输出电容 反向传输电容 输出电容 Coss(eff.) 有效输出电容 VDS = 0 V 至 480 V, VGS = 0 V - Qg(tot) 10 V 的栅极电荷总量 VDS = 640 V, ID = 6 A, VGS = 10 V - 22 29 nC - 5 - nC - 8.6 - nC - 2.4 - Ω - 16 42 ns - 10 30 ns - 40 90 ns - 4.5 19 ns Qgs Qgd ESR 栅极－源极栅极电荷 （注 4） 栅极－漏极 “ 米勒 ” 电荷 等效串联电阻 f = 1 MHz 开关特性 td(on) 导通延迟时间 tr 开通上升时间 td(off) 关断延迟时间 tf 关断下降时间 VDD = 400 V, ID = 6 A, VGS = 10 V, Rg = 4.7 Ω （注 4） 漏极－源极二极管特性 漏极－源极二极管最大正向连续电流 - - 6 A ISM 漏极－源极二极管最大正向脉冲电流 - - 18 A VSD 漏极－源极二极管正向电压 IS trr 反向恢复时间 Qrr 反向恢复电荷 VGS = 0 V, ISD = 6 A - - 1.2 V VGS = 0 V, ISD = 6 A, dIF/dt = 100 A/μs - 318 - ns - 4.5 - μC 注： 1. 重复额定值：脉冲宽度受限于最大结温。 2. IAS = 1.2 A, VDD = 50 V, RG = 25 Ω, 开始于 TJ = 25°C 3. ISD ≤ 6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, 开始于 TJ = 25°C 4. 典型特性本质上独立于工作温度。 © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 2 www.fairchildsemi.com FCD850N80Z / FCU850N80Z — N- 沟道 SuperFET® II MOSFET 封装标识与定购信息 图 1. 导通区域特性 20 图 2. 传输特性 20 VGS = 20.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 10 ID, Drain Current[A] ID, Drain Current[A] 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 150 C o 25 C o *Notes: 1. 250μs Pulse Test -55 C o 1 2. TC = 25 C 1 10 VDS, Drain-Source Voltage[V] 1 20 图 3. 导通电阻变化与漏极电流和栅极电压的关系 50 o *Note: TC = 25 C 1.25 1.00 VGS = 10V 0.75 VGS = 20V 0.50 0 3 6 9 12 ID, Drain Current [A] 15 Capacitances [pF] VGS, Gate-Source Voltage [V] Ciss Coss 1 2. 250μs Pulse Test o 150 C o *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 25 C 1 10 100 10 *Notes: 1. VGS = 0V 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 图 6. 栅极电荷特性 10000 1000 7 10 0.1 18 图 5. 电容特性 5 6 VGS, Gate-Source Voltage[V] 图 4. 体二极管正向电压变化与源极电流 和温度的关系 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 1.50 4 3 VDS = 160V 8 VDS = 400V VDS = 640V 6 4 2 0 1000 *Note: ID = 6A 0 6 12 18 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FCD850N80Z / FCU850N80Z — N- 沟道 SuperFET® II MOSFET 典型性能特征 图 7. 击穿电压变化与温度的关系 图 8. 导通电阻变化与温度的关系 3.0 1.2 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage *Notes: 1. VGS = 0V 2. ID = 1mA 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.4 *Notes: 1. VGS = 10V 2. ID = 3A 1.8 1.2 0.6 0.0 -100 200 图 9. 最大安全工作区 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 图 10. 最大漏极电流与壳温的关系 6 100 ID, Drain Current [A] 10μs ID, Drain Current [A] 10 100μs 1ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 4 2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 图 11. Eoss 与漏源极电压的关系 6 EOSS, [μJ] 4 2 0 0 200 400 600 VDS, Drain to Source Voltage [V] © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 800 4 www.fairchildsemi.com FCD850N80Z / FCU850N80Z — N- 沟道 SuperFET® II MOSFET 典型性能特征 （接上页） FCD850N80Z / FCU850N80Z — N- 沟道 SuperFET® II MOSFET 典型性能特征 （接上页） 2 1 o ZθJC(t), Thermal Response [ C/W] 图 12. 瞬态热响应曲线 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 Single pulse 0.01 -5 10 © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 t2 *Notes: o 1. ZθJC(t) = 1.65 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FCD850N80Z / FCU850N80Z — N- 沟道 SuperFET® II MOSFET IG= 常量 图 13. 栅极电荷测试电路与波形 VDS RG V 10V GS RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off 图 14. 阻性开关测试电路与波形 VGS 图 15. 非箝位电感开关测试电路与波形 © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 6 www.fairchildsemi.com FCD850N80Z / FCU850N80Z — N- 沟道 SuperFET® II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 图 16. 二极管恢复 dv/dt 峰值测试电路与波形 © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 7 www.fairchildsemi.com FCD850N80Z / FCU850N80Z — N- 沟道 SuperFET® II MOSFET 机械尺寸 图 17. TO252 (D-PAK), 模塑 3 引脚 , Jedec 变体 AA&AB 封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 / 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆半导体全球范围内的条款与条件，尤其是其中涉及飞兆半 导体产品保修的部分。 随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸： http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 8 www.fairchildsemi.com FCD850N80Z / FCU850N80Z — N- 沟道 SuperFET® II MOSFET 机械尺寸 图 18. TO251 (I-PAK), 模塑 3 引脚 , 变体 AA 封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 / 或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆半导体全球范围内的条款与条件，尤其是其中涉及飞兆半 导体产品保修的部分。 随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸： http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT251-003 © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 9 www.fairchildsemi.com AccuPower™ AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ 仙童 ™ * 商标为 System General Corporation 所有，授权飞兆半导体公司使用。 声明 飞兆半导体公司为提高产品的可靠性、功能或设计，保留对其作出变动的权利，恕不另行通知。对于本文描述的任何产品和电路在应用中所出现的问题，飞兆半 导体公司不承担任何责任；不转让其专利权下的任何许可证，也不转让其他权利。本文中的各项规格说明特定用于本文所述之产品，其保修条款仅用于本文相关 产品，不适用于飞兆半导体全球销售的其他产品。 使用寿命条款 若无飞兆半导体公司正式的书面授权，其产品不可作为生命支持设备或系统中的关键器件。 具体如下： 1. 生命支持器件或系统是指如下的设备或系统：(a) 用于外科植入人体，或 (b) 支持或维持生命，以及 (c) 即使依照标示中的使用说明进行正确操 作，但若操作失败，仍将对使用者造成严重的伤害。 2. 关键器件是指生命支持设备或系统中，由于该器件的失效会导致整个生 命支持设备或系统的失效，或是影响其安全性及使用效果。 防伪条款 飞兆半导体防伪条款。飞兆半导体防伪条款也在我们的外部网站 www.fairchildsemi.com“ 销售支持 ” 部分清楚列明。 半导体产品的仿造行为在行业内已日趋益严重。所有半导体产品制造商都正遭遇其零部件被仿造的问题。无意间购买到假冒零部件的客户遇到很多问题，如品 牌声誉损失、性能不合格、应用失败、生产成本增加和制造延误增多等。飞兆半导体正在采取强有力的措施，保护自己并防止客户购买到仿造零部件。飞兆半 导体强烈鼓励客户直接从飞兆半导体或其网页所列国家 / 地区的授权分销商处购买飞兆半导体的产品。客户直接从飞兆半导体公司或从其授权分销商购买到的 产品都是正品。这些产品具有全面的可追溯性，符合飞兆半导体的质量标准，便于操作和存储，并提供飞兆半导体完整、最新的技术和产品信息的获取途径。 飞兆半导体公司和其授权分销商将做好所有保修工作，并妥善处理可能出现的任何保修问题。对于从非授权分销商购买的零部件， 飞兆半导体将不提供任何保 修或其他援助。飞兆半导体致力于打击这一全球性问题，并鼓励客户尽力通过直接购买或从授权分销商购买的方式阻止产品仿造行为。 产品状态定义 术语定义 数据表标识 产品状态 预告 初级阶段 / 设计阶段 定义 初级 样品 该数据表包含了初始数据，补充数据随后发布。飞兆半导体保留有在任何时间为改进设计 而做出更改，且无需另行通知的权力。 无需标识 量产 该数据表包含了最终的技术规范。飞兆半导体保留在任何时间为改进设计而做出更改，且 无需另行通知的权力。 废弃 停产 数据手册包含飞兆半导体已停产产品的规格数据。该数据表信息仅供参考。 数据表包含了产品开发的设计规格。具体参数可进行改动，且无需做出相应通知。 Rev. I68 © 2014 飞兆半导体公司 FCD850N80Z / FCU850N80ZRev. C0 10 www.fairchildsemi.com FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET 商标 以下注册及未注册的商标或服务标志均为飞兆半导体公司和 / 或其全球子公司所有，且并非所有该类商标的完整目录。 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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