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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FDB8443
tm
®
N-Channel PowerTrench MOSFET
40 V, 182 A, 3.0 mΩ
Features
Applications
RDS(on) = 2.3 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A
Power Tools
QG(tot) = 142 nC ( Typ.)
Motor drives and Uninterruptible Power Supplies
Low Miller Charge, QGD = 32 nC( Typ.)
Synchronous Rectification
UIS Capability (Single Pulse and Repetitive Pulse)
Battery Protection Circuit
RoHS Compliant
D
G
S
D2-PAK
(TO-263)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
VGS
ID
Parameter
Gate to Source Voltage
- Continuous (TC = 25oC, Silicon Limited)
Drain Current
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Continuous (TA = 25oC, RθJA = 43oC/W)
IDM
Drain Current
EAS
Single Pulse Avalanche Energy
PD
- Pulsed
FDB8443
40
Unit
V
±20
V
182*
129*
A
120
25
See Figure 4
(Note 1)
531
mJ
Power Dissipation
188
W
Derate above 25oC
1.25
W/oC
TJ, TSTG Operating and Storage Temperature
o
-55 to +175
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case, Max.
RθJA
Thermal Resistance Junction to Ambient, Max.
RθJA
FDB8443
(Note 2)
2
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area, Max.
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
1
Unit
0.8
o
C/W
62
o
C/W
43
o
C/W
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
March 2013
Device Marking
FDB8443
Device
FDB8443
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
VGS = VDS, ID = 250μA
2
2.8
4
V
ID = 80A, VGS= 10V
-
2.3
3.0
ID = 80A, VGS= 10V,
TJ = 175oC
-
4.2
5.5
VDS = 25V, VGS = 0V,
f = 1MHz
-
9310
-
pF
-
800
-
pF
pF
VDS = 32V,
VGS = 0V
TC = 150oC
μA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
510
-
RG
Gate Resistance
VGS = 0.5V, f = 1MHz
-
0.9
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
-
142
185
nC
VGS = 0 to 2V
Qg(TH)
Threshold Gate Charge
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller“ Charge
VDD = 20V
ID = 35A
Ig = 1mA
-
17.5
23
nC
-
36
-
nC
-
18.8
-
nC
-
32
-
nC
ns
Switching Characteristics (VGS = 10V)
ton
Turn-On Time
-
-
58
td(on)
Turn-On Delay Time
-
18.4
-
ns
tr
Rise Time
-
17.9
-
ns
td(off)
Turn-Off Delay Time
-
55
-
ns
tf
Fall Time
-
13.5
-
ns
toff
Turn-Off Time
-
-
109
ns
ISD = 35A
-
0.8
1.25
ISD = 15A
-
0.8
1.0
-
42
55
ns
-
48
62
nC
VDD = 20V, ID = 35A
VGS = 10V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 35A, dISD/dt = 100A/μs
V
Notes:
1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A.
2: Pulse width = 100s.
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
2
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
VGS = 10V
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULIPLIER
200
1.2
0.8
0.6
0.4
150
100
CURRENT LIMITED
BY PACKAGE
50
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
0
25
175
NORMALIZED THERMAL
IMPEDANCE, ZθJC
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
1
50
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
-3
10
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
5000
VGSV= 10V
TRANSCONDUCTANCE
TRANSCONDUCTANCE
GS = 10V
MAY
LIMIT
CURRENT
MAY
LIMIT
CURRENT
IN THIS
REGION
IN THIS
REGION
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)
IDM, PEAK CURRENT (A)
1000
1000
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
100
100
SINGLE
PULSE
SINGLE
PULSE
1010
-5
1010-5
-4
1010-4
-3
-2
-1
1010-3
1010-2
1010-1
t, RECTANGULAR
PULSE
DURATION(s)
t, RECTANGULAR
PULSE
DURATION(s)
0
10 1
1
10 10
Figure 4. Peak Current Capability
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
3
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
Typical Characteristics
500
10us
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
1000
100us
100
100
10
LIMITED
BY PACKAGE
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
10ms
SINGLE PULSE
TJ = MAX RATED
o
TC = 25 C
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
100
0.1
1
10
100
1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
200
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
160
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
120
TJ = 175oC
80
TJ = 25oC
TJ = -55oC
40
0
2.0
2.5
3.0
3.5
4.0
4.5
160
VGS = 5V
VGS = 4.5V
120
80
40
0
5.0
VGS = 4V
0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
ID = 80A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
60
TJ = 25oC
TJ = 175oC
40
20
0
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 8. Saturation Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
80
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
1.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
4
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.15
VGS = VDS
ID = 250μA
1.10
1.0
1.05
0.8
1.00
0.6
0.4
-80
0.95
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.90
-80
200
20000
Ciss
10000
Coss
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
Figure 13. Capacitance vs Drain to Source
Voltage
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
CAPACITANCE (pF)
ID = 250μA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
10
ID = 35A
VDD = 15V
8
VDD = 20V
6
VDD = 25V
4
2
0
0
20
40
60
80 100 120
Qg, GATE CHARGE(nC)
140
160
Figure 14. Gate Charge vs Gate to Source Voltage
5
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
Typical Characteristics
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
6
www.fairchildsemi.com
FDB8443 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
Sync-Lock™
FPS™
®
AccuPower™
F-PFS™
®*
®
®
®
PowerTrench
AX-CAP *
FRFET
SM
Global Power Resource
PowerXS™
BitSiC™
TinyBoost™
Programmable Active Droop™
Green Bridge™
Build it Now™
TinyBuck™
QFET®
Green FPS™
CorePLUS™
TinyCalc™
QS™
Green FPS™ e-Series™
CorePOWER™
TinyLogic®
Quiet Series™
Gmax™
CROSSVOLT™
TINYOPTO™
RapidConfigure™
GTO™
CTL™
TinyPower™
IntelliMAX™
Current Transfer Logic™
™
TinyPWM™
®
ISOPLANAR™
DEUXPEED
TinyWire™
Dual Cool™
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
TranSiC®
EcoSPARK®
SignalWise™
and Better™
TriFault Detect™
EfficentMax™
SmartMax™
MegaBuck™
TRUECURRENT®*
ESBC™
SMART START™
MICROCOUPLER™
μSerDes™
Solutions for Your Success™
MicroFET™
®
SPM®
MicroPak™
STEALTH™
MicroPak2™
Fairchild®
UHC®
SuperFET®
MillerDrive™
Fairchild Semiconductor®
Ultra FRFET™
SuperSOT™-3
MotionMax™
FACT Quiet Series™
UniFET™
SuperSOT™-6
mWSaver™
FACT®
VCX™
SuperSOT™-8
OptoHiT™
FAST®
VisualMax™
SupreMOS®
OPTOLOGIC®
FastvCore™
VoltagePlus™
OPTOPLANAR®
SyncFET™
FETBench™
XS™
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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