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®
N-Channel PowerTrench MOSFET
40V, 80A, 3.0mΩ
Features
Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 142nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
©2011 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
Publication Order Number:
FDB8443-F085/D
FDB8443-F085 N-Channel PowerTrench® MOSFET
FDB8443-F085
Symbol
Drain to Source Voltage
VDSS
VGS
Parameter
Ratings
40
Units
V
Gate to Source Voltage
±20
V
Drain Current Continuous (TC < 146oC, VGS = 10V)
80
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
ID
25
Pulsed
Single Pulse Avalanche Energy
EAS
PD
A
See Figure 4
(Note 1)
531
mJ
Power Dissipation
188
W
Derate above 25oC
1.25
W/oC
-55 to +175
oC
0.8
oC/W
62
o
C/W
43
o
C/W
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
(Note 2)
2
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
RθJA
Package Marking and Ordering Information
Device Marking
Device
Package
FDB8443
FDB8443-F085
TO-263AB
Reel Size
Tape Width
Quantity
24mm
800 units
330mm
Electrical Characteristics TC = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
40
-
-
-
V
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
VGS = VDS, ID = 250μA
2
2.8
4
V
ID = 80A, VGS= 10V
-
2.3
3.0
ID = 80A, VGS= 10V,
TJ = 175oC
-
4.2
5.5
VDS = 25V, VGS = 0V,
f = 1MHz
-
9310
-
pF
-
800
-
pF
pF
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 32V,
VGS = 0V
TC = 150oC
μA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
510
-
RG
Gate Resistance
VGS = 0.5V, f = 1MHz
-
0.9
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
-
142
185
nC
VGS = 0 to 2V
Qg(TH)
Threshold Gate Charge
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller“ Charge
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2
VDD = 20V
ID = 35A
Ig = 1mA
-
17.5
23
nC
-
36
-
nC
-
18.8
-
nC
-
32
-
nC
FDB8443-F085 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics (VGS = 10V)
ton
Turn-On Time
-
-
58
ns
td(on)
Turn-On Delay Time
-
18.4
-
ns
tr
Rise Time
-
17.9
-
ns
td(off)
Turn-Off Delay Time
-
55
-
ns
tf
Fall Time
-
13.5
-
ns
toff
Turn-Off Time
-
-
109
ns
ISD = 35A
-
0.8
1.25
ISD = 15A
-
0.8
1.0
VDD = 20V, ID = 35A
VGS = 10V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 35A, dISD/dt = 100A/μs
Notes:
1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A.
2: Pulse width = 100s.
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3
V
-
42
55
ns
-
48
62
nC
FDB8443-F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TC = 25oC unless otherwise noted
200
1.0
160
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
25
0
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
VGS = 10V
120
80
40
0
25
175
CURRENT LIMITED
BY PACKGAE
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
-3
10
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)
1000
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
0
10
1
10
FDB8443-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
500
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
10us
100
100us
100
10
LIMITED
BY PACKAGE
1ms
1
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
10ms
TJ = MAX RATED
o
TC = 25 C
80
TJ = 25oC
TJ = -55oC
2.5
3.0
3.5
4.0
4.5
VGS = 5V
VGS = 4.5V
80
40
0
TJ = 175 C
20
5
6
7
8
9
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
10
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
o
3
1000 5000
VGS = 4V
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 8. Saturation Characteristics
TJ = 25oC
0
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120
5.0
60
40
10
160
Figure 7. Transfer Characteristics
ID = 80A
1
Figure 6. Unclamped Inductive Switching
Capability
VGS, GATE TO SOURCE VOLTAGE (V)
80
0.1
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = 175oC
0
2.0
1
0.01
VGS = 10V
VDD = 5V
40
STARTING TJ = 150oC
200
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120
10
100
Figure 5. Forward Bias Safe Operating Area
160
STARTING TJ = 25oC
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1.8
1.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
FDB8443-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.15
1.10
1.0
1.05
0.8
1.00
0.6
0.4
-80
0.95
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
20000
Ciss
10000
Coss
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.90
-80
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
CAPACITANCE (pF)
ID = 1mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
VGS = VDS
ID = 250μA
50
Figure 13. Capacitance vs Drain to Source
Voltage
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
10
ID = 35A
VDD = 15V
8
VDD = 20V
6
VDD = 25V
4
2
0
0
20
40
60
80 100 120
Qg, GATE CHARGE(nC)
140
160
Figure 14. Gate Charge vs Gate to Source Voltage
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6
FDB8443-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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