FDP8443_F085

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDP8443-F085 N-Channel PowerTrench® MOSFET FDP8443-F085 ® N-Channel PowerTrench MOSFET 40V, 80A, 3.5mΩ Features Applications „ Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 142nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers „ Low Qrr Body Diode „ Electronic Steering „ UIS Capability (Single Pulse and Repetitive Pulse) „ Integrated Starter / Alternator „ Qualified to AEC Q101 „ Distributed Power Architecture and VRMs „ RoHS Compliant „ Primary Switch for 12V Systems ©2009 Semiconductor Components Industries, LLC. September-2017, Rev. 1 Publication Order Number: FDP8443-F085/D Symbol Drain to Source Voltage VDSS VGS Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 144oC, VGS = 10V) 80 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) ID 20 Pulsed Single Pulse Avalanche Energy EAS PD A See Figure 4 (Note 1) 531 mJ Power Dissipation 188 W Derate above 25oC 1.25 W/oC -55 to +175 oC 0.8 oC/W 62 o TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient (Note 2) C/W Package Marking and Ordering Information Device Marking Device FDP8443 FDP8443-F085 Package Reel Size Tape Width Quantity Tube N/A 50 units TO-220AB Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 40 - - - V - 1 - - 250 VGS = ±20V - - ±100 nA VGS = VDS, ID = 250μA 2 2.8 4 V ID = 80A, VGS= 10V - 2.7 3.5 ID = 80A, VGS= 10V, TJ = 175oC - 4.7 6.1 VDS = 25V, VGS = 0V, f = 1MHz - 9310 - pF - 800 - pF pF Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 32V, VGS = 0V TC = 150oC μA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 510 - RG Gate Resistance VGS = 0.5V, f = 1MHz - 0.9 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 142 185 nC VGS = 0 to 2V Qg(TH) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller“ Charge www.onsemi.com 2 VDD = 20V ID = 35A Ig = 1mA - 17.5 23 nC - 36 - nC - 18.8 - nC - 32 - nC FDP8443-F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics (VGS = 10V) ton Turn-On Time - - 58 ns td(on) Turn-On Delay Time - 18.4 - ns tr Rise Time - 17.9 - ns td(off) Turn-Off Delay Time - 55 - ns tf Fall Time - 13.5 - ns toff Turn-Off Time - - 109 ns ISD = 35A - 0.8 1.25 ISD = 15A - 0.8 1.0 VDD = 20V, ID = 35A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 35A, dISD/dt = 100A/μs Notes: 1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A. 2: Pulse width = 100s. www.onsemi.com 3 V - 42 55 ns - 48 62 nC FDP8443-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted 200 1.0 160 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 25 0 50 75 100 125 150 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 VGS = 10V 120 80 40 0 25 175 CURRENT LIMITED BY PACKAGE 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK IDM, PEAK CURRENT (A) 1000 CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 0 10 1 10 FDP8443-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 500 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 10us 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 SINGLE PULSE OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 1 10ms TJ = MAX RATED o TC = 25 C 80 TJ = 25oC TJ = -55oC 2.5 3.0 3.5 4.0 4.5 VGS = 5V VGS = 4.5V 80 40 0 TJ = 175 C 20 5 6 7 8 9 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX o 3 1000 5000 VGS = 4V 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics TJ = 25oC 0 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 120 5.0 60 40 10 160 Figure 7. Transfer Characteristics ID = 80A 1 Figure 6. Unclamped Inductive Switching Capability VGS, GATE TO SOURCE VOLTAGE (V) 80 0.1 tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 175oC 0 2.0 1 0.01 VGS = 10V VDD = 5V 40 STARTING TJ = 150oC 200 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 120 10 100 Figure 5. Forward Bias Safe Operating Area 160 STARTING TJ = 25oC DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 5 FDP8443-F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1.15 1.10 1.0 1.05 0.8 1.00 0.6 0.4 -80 0.95 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 20000 Ciss 10000 Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.90 -80 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250μA 50 Figure 13. Capacitance vs Drain to Source Voltage -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) NORMALIZED GATE THRESHOLD VOLTAGE 1.2 10 ID = 35A VDD = 15V 8 VDD = 20V 6 VDD = 25V 4 2 0 0 20 40 60 80 100 120 Qg, GATE CHARGE(nC) 140 160 Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 6 FDP8443-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com