FDC6401N

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 3.0 A, 20 V. • Low gate charge (3.3 nC) Applications • High performance trench technology for extremely RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V low RDS(ON) • DC/DC converter • High power and current handling capability • Battery Protection • Power Management D2 S1 D1 G2 SuperSOT TM -6 S2 3 5 2 6 1 G1 Absolute Maximum Ratings Symbol 4 o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) 3.0 A PD Power Dissipation for Single Operation (Note 1a) 0.96 – Continuous – Pulsed TJ, TSTG 12 (Note 1b) 0.9 (Note 1c) 0.7 W –55 to +150 °C (Note 1a) 130 °C/W (Note 1) 60 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .401 FDC6401N 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDC6401N Rev C (W) FDC6401N October 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V 100 nA ID = 250 µA 1.5 V On Characteristics 20 V 13 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C 0.5 0.9 ID(on) On–State Drain Current VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.5 A VGS = 4.5 V, ID = 3.0 A,TJ=125°C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5V, ID = 3.0 A 10 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 324 pF –3 50 66 71 mV/°C 70 95 106 12 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) 82 pF 42 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 5 10 ns 7 14 ns Turn–Off Delay Time 13 23 ns tf Turn–Off Fall Time 1.6 3 ns Qg Total Gate Charge 3.3 4.6 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, VGS = 4.5 V ID = 3.0 A, 0.95 nC 0.7 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 0.8 A Voltage (Note 2) 0.7 0.8 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 130 °C/W when mounted on a 0.125 2 in pad of 2 oz. copper. b) 140 °C/W when 2 mounted on a .004 in pad of 2 oz copper c) 180 C°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDC6401N Rev C (W) FDC6401N Electrical Characteristics FDC6401N Typical Characteristics 2 12 3.0V 2.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V 10 3.5V 8 2.0V 6 4 2 0 0 1 2 VGS = 2.0V 1.8 1.6 1.4 2.5V 1.2 3.0V 4.5V 0.8 3 0 2 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 10 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.22 ID = 3.0A VGS = 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID = 1.5A 0.18 0.14 o TA = 125 C 0.1 0.06 o TA = 25 C 0.02 -50 -25 0 25 50 75 100 125 150 1 2 o 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 100 TA = -55oC o 25 C IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 3.5V 1 8 125oC 6 4 2 0 VGS = 0V 10 TA = 125oC 1 o 25 C 0.1 -55oC 0.01 0.001 0.0001 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6401N Rev C (W) FDC6401N Typical Characteristics 450 ID = 3A VDS = 5V f = 1 MHz VGS = 0 V 10V 4 360 15V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 270 180 COSS 1 90 0 0 CRSS 0 1 2 3 4 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100µs 10 1ms 10ms 100ms 1s DC VGS = 4.5V SINGLE PULSE RθJA = 180oC/W 0.1 o TA = 25 C 0.01 0.1 1 20 10 100 10 SINGLE PULSE RθJA = 180°C/W TA = 25°C 8 6 4 2 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 180°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDC6401N Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. 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