FDC658P

FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET Features General Description This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. SuperSOTTM-6 SOT-23 SuperSOTTM-8 -4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V RDS(ON) = 0.075 Ω @ VGS = -4.5 V. Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOIC-16 SOT-223 SO-8 S 1 6 8 .65 2 5 3 4 D D G D SuperSOT TM -6 pin 1 Absolute Maximum Ratings Symbol Parameter VDSS D TA = 25°C unless otherwise note Ratings Units Drain-Source Voltage -30 V VGSS Gate-Source Voltage - Continuous ±20 V ID Drain Current - Continuous -4 A (Note 1a) - Pulsed PD Maximum Power Dissipation -20 (Note 1a) (Note 1b) TJ,TSTG Operating and Storage Temperature Range 1.6 W 0.8 -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W © 1999 Semiconductor Components, Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDC658P/D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V o V mV/oC -22 TJ = 55 oC -1 µA -10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th)/∆TJ Gate Threshold VoltageTemp.Coefficient ID = -250 µA, Referenced to 25 oC -1 RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -4.0 A TJ = 125 C VGS = -4.5 V, ID = -3.4 A On-State Drain Current VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -5V, ID = -4 A -3 V mV/oC 4.1 o ID(on) -1.7 0.041 0.05 0.058 0.08 0.06 0.075 -20 Ω A 9 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = -15 V, VGS = 0 V, 750 pF Coss Output Capacitance f = 1.0 MHz 220 pF Crss Reverse Transfer Capacitance 100 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDD = -15 V, ID = -1 A, 12 22 ns tr Turn - On Rise Time VGS = -10 V, RGEN = 6 Ω 14 25 ns tD(off) Turn - Off Delay Time 24 38 ns tf Turn - Off Fall Time 16 27 ns Qg Total Gate Charge VDS = -15 V, ID = -4.0 A, 8 12 nC Qgs Gate-Source Charge VGS = -5 V Qgd Gate-Drain Charge 1.8 nC 3 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Continuous Source Diode Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.76 -1.3 A -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78oC/W when mounted on a 1 in2 pad of 2oz Cu on FR-4 board. b. 156oC/W when mounted on a minimum pad of 2oz Cu on FR-4 board. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2 Typical Electrical Characteristics 16 R DS(on) , NORMALIZED - ID , DRAIN-SOURCE CURRENT (A) VGS= -10V -6.0V -4.5V -4.0V 12 -3.5V 8 -3.0V 4 0 0 1 2 3 -VDS , DRAIN-SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 2 20 1.8 VGS = -4.0 V 1.6 -4.5V 1.4 -6.0V 1.2 -8.0V -10.0V 1 0.8 4 -5.0V 0 4 8 12 - I D , DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Figure 1. On-Region Characteristics. Drain Current and Gate Voltage. 0.16 I D = -4A V GS = -10V 1.4 1.2 1 0.8 0.6 -50 ID = -2A R DS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.12 0.08 TJ = 125°C 0.04 TJ = 25°C 0 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 150 Figure 3. On-Resistance Variation 20 10 - I D , DRAIN CURRENT (A) 16 -IS , REVERSE DRAIN CURRENT (A) 20 TJ = -55°C 125°C 25°C 12 8 4 0 1 2 3 4 5 -VGS , GATE TO SOURCE VOLTAGE (V) 4 6 8 -V GS , GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. with Temperature. V DS = -5V 2 6 VGS = 0V TJ = 125°C 1 25°C 0.1 -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Figure 5. Transfer Characteristics. Variation with Source Current and Temperature. www.onsemi.com 3 Typical Electrical Characteristics (continued) 3000 I D = -4A 8 VDS = -5V -10V CAPACITANCE (pF) -VGS , GATE-SOURCE VOLTAGE (V) 10 -15V 6 4 1000 Ciss 300 Coss 2 0 0 3 6 9 Q g , GATE CHARGE (nC) 12 100 30 0.1 15 0.3 1 3 7 -V DS , DRAIN TO SOURCE VOLTAGE (V) 15 80 5 10 S RD (ON )L IMI 100 us T 1m s 10m s 10 0m s 1s 3 1 0.3 VGS = -10V SINGLE PULSE R θJA = 156°C/W TA = 25°C 0.1 0.03 0.01 0.1 0.2 SINGLE PULSE RθJA =156°C/W TA = 25°C 4 POWER (W) 30 3 2 DC 1 0.5 1 2 5 10 20 50 0 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE 1 r(t), NORMALIZED EFFECTIVE 30 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 0.5 D = 0.5 0.2 0.1 0.05 R θJA (t) = r(t) * R θJA R θJA = 156°C/W 0.2 0.1 P(pk) 0.05 t1 0.02 0.02 0.01 t2 TJ - TA = P * R θJA (t) 0.01 Duty Cycle, D = t 1/ t 2 Single Pulse 0.005 0.00001 0.0001 0.001 0.01 0.1 1 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 10 100 300 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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