N-Channel UniFETTM MOSFET
500 V, 4 A, 1.4 Ω
Description
Features
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A
• Low Gate Charge (Typ. 11 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
D
D
G
S
MOSFET Maximum Ratings
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
D-PAK
G
S
TC = 25oC unless otherwise noted.
Parameter
- Continuous (TC = 25oC)
FDD5N50TM-WS
500
Unit
V
±30
V
4
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
4
A
EAR
Repetitive Avalanche Energy
(Note 1)
4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
16
A
(Note 2)
256
mJ
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
A
2.4
- Derate Above 25oC
40
W
0.3
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
FDD5N50TM-WS
RθJC
Thermal Resistance, Junction to Case, Max.
1.4
RθJA
Thermal Resistance, Junction to Ambient, Max.
110
©2008 Semiconductor Components Industries, LLC.
October-2017,Rev 3
Unit
o
C/W
PPublication Order Number:
FDD5N50/D
FDD5N50 — N-Channel UniFETTM MOSFET
FDD5N50
Part Number
FDD5N50TM-WS
Top Mark
FDD5N50
Electrical Characteristics
Symbol
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
TC = 25oC unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
-
0.6
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to
25oC
VDS = 500 V, VGS = 0 V
-
-
1
VDS = 400 V, TC = 125oC
-
-
10
VGS = ±30 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10 V, ID = 2 A
-
1.15
1.4
Ω
gFS
Forward Transconductance
VDS = 20 V, ID = 2 A
-
4.3
-
S
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
480
640
pF
-
66
88
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400 V, ID = 5 A,
VGS = 10 V
(Note 4)
-
5
8
pF
-
11
15
nC
-
3
-
nC
-
5
-
nC
-
13
36
ns
-
22
54
ns
-
28
66
ns
-
20
50
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250 V, ID = 5 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
4
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
16
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 4 A
-
-
1.4
V
trr
Reverse Recovery Time
300
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 5 A,
dIF/dt = 100 A/μs
-
1.8
-
μC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 32 mH, IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD ≤ 4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
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2
FDD5N50 — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
20
10
ID,Drain Current[A]
ID,Drain Current[A]
20
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
Figure 2. Transfer Characteristics
1
o
150 C
o
25 C
1
o
-55 C
*Notes:
1. 250μs Pulse Test
0.1
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
0.04
0.1
2. TC = 25 C
1
10
VDS,Drain-Source Voltage[V]
30
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.1
5
6
7
VGS,Gate-Source Voltage[V]
IS, Reverse Drain Current [A]
70
2.5
VGS = 10V
2.0
VGS = 20V
1.5
o
150 C
10
o
25 C
*Notes:
1. VGS = 0V
o
1.0
*Note: TJ = 25 C
0
3
6
ID, Drain Current [A]
9
1.6
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
Ciss
2. 250μs Pulse Test
0.8
1.2
VSD, Body Diode Forward Voltage [V]
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
750
1
0.4
12
Figure 5. Capacitance Characteristics
1000
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3.0
RDS(ON) [Ω],
Drain-Source On-Resistance
4
*Note:
1. VGS = 0V
2. f = 1MHz
500
Coss
250
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
0
30
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3
*Note: ID = 5A
0
4
8
Qg, Total Gate Charge [nC]
12
FDD5N50 — N-Channel UniFETTM MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
0.8
-75
*Notes:
1. VGS = 0V
2. ID = 250μA
-25
25
75
125
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
0.0
-75
175
Figure 9. Maximum Safe Operating Area
-25
25
75
125
o
TJ, Junction Temperature [ C]
175
Figure 10. Maximum Drain Current
vs. Case Temperature
4.5
30
30μs
10
4
100μs
ID, Drain Current [A]
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
1. TC = 25 C
3
2
1
o
10
100
VDS, Drain-Source Voltage [V]
0
25
800
50
75
100
125
o
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
(t), Thermal Response [oC/W]
1
Z
0.01
2. TJ = 150 C
3. Single Pulse
θJC
Thermal
Response [ZθJC]
ID, Drain Current [A]
*Notes:
1. VGS = 10V
2. ID = 2A
0.5
3
1
0.5
0.2
PDM
0.1
0.1
t1
0.05
0.02
o
1. ZθJC(t) = 1.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
Single pulse
0.01
-5
10
t2
*Notes:
-4
10
-3
-2
-1
10
10
10
Pulse Duration [sec]
tRectangular
1, Rectangular Pulse Duration [sec]
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4
0
10
1
10
150
FDD5N50 — N-Channel UniFETTM MOSFET
Typical Performance Characteristics (Continued)
FDD5N50 — N-Channel UniFETTM MOSFET
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
DUT
VGS
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
FDD5N50 — N-Channel UniFETTM MOSFET
DUT
FDD5N50 — N-Channel UniFETTM MOSFET
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
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