FDD6637

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using • –55 A, –35 V Fairchild Semiconductor’s proprietary PowerTrench RDS(ON) = 11.6 mΩ @ VGS = –10 V RDS(ON) = 18 mΩ @ VGS = –4.5 V technology to deliver low Rdson and optimized Bvdss • High performance trench technology for extremely capability to offer superior performance benefit in the low RDS(ON) applications. • RoHS Compliant Applications • Inverter • Power Supplies D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol T A =25 oC unless otherwise noted Parameter VDSS Drain-Source Voltage VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) VGSS Gate-Source Voltage ID Continuous Drain Current PD Power Dissipation TJ, TSTG (Note 4) Ratings Units –35 V –40 V ±25 V A @TC=25°C (Note 3) –55 @TA=25°C (Note 1a) –13 Pulsed (Note 1a) –100 @TC=25°C (Note 3) 57 @TA=25°C (Note 1a) 3.1 @TA=25°C (Note 1b) W 1.3 Operating and Storage Junction Temperature Range –55 to +150 °C °C/W Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.2 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6637 FDD6637 D-PAK (TO-252) 13’’ 16mm 2500 units 2006 Fairchild Semiconductor Corporation FDD6637 Rev. 1.2 www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET March 2015 Symbol Parameter T A = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings EAS IAS Drain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current VDD = -35 V, ID= -11 A, L=1mH 61 mJ –14 A Off Characteristics(Note 2) IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current IGSS Gate–Body Leakage BVDSS On Characteristics VGS = 0 V, VDS = –28 V, VGS = ±25 V, ID = –250 µA –35 V VGS = 0 V VDS = 0 V –1 µA ±100 nA –3 11.6 18 19 mΩ (Note 2) VGS(th) Gate Threshold Voltage RDS(on) Static Drain–Source On–Resistance gFS Forward Transconductance VDS = VGS, ID = –250 µA VGS = –10 V, ID = –14 A VGS = –4.5 V, ID = –11 A VGS = –10 V, ID = –14 A, TJ=125°C VDS =–5 V, ID = –14 A –1 –1.6 9.7 14.4 14.7 V 35 S 2370 pF 470 pF 250 pF 3.6 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VDS = –20 V, f = 1.0 MHz V GS = 0 V, f = 1.0 MHz (Note 2) td(on) Turn–On Delay Time 18 32 ns tr Turn–On Rise Time VDD = –20 V, ID = –1 A, 10 20 ns td(off) Turn–Off Delay Time VGS = –10 V, RGEN = 6 Ω 62 100 ns tf Turn–Off Fall Time 36 58 ns Qg Total Gate Charge, VGS = –10V 45 63 nC Qg Total Gate Charge, VGS = –5V 25 35 nC Qgs Gate–Source Charge 7 nC Qgd Gate–Drain Charge 10 nC FDD6637 Rev. 1.2 VDS = – 20 V, ID = –14 A www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Electrical Characteristics Symbol Parameter T A = 25°C unless otherwise noted Test Conditions Min Typ Max Units –0.8 –1.2 Drain–Source Diode Characteristics VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = –14 A IF = –14 A, (Note 2) diF/dt = 100 A/µs V 28 ns 15 nC Notes: 1. RθJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in 2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at T C = 25°C and RDS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A 4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. FDD6637 Rev. 1.2 www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Electrical Characteristics 100 2.4 -6.0V VGS = -3.5V -5.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -4.5V -I D, DRAIN CURRENT (A) 80 -4.0V 60 -3.5V 40 20 -3.0V 0 1 2 3 -VD S, DRAIN-SOURCE VOLTAGE (V) 1.8 -4.0V 1.6 -4.5V -5.0V 1.4 -6.0V 1.2 -8.0V -10V 1 4 0 Figure 1. On-Region Characteristics 20 40 60 -I D, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.05 1.8 ID = -14A V GS = -10V I D = -7A R DS(ON), ON-RESISTANCE (OHM) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 0.8 0 1.6 1.4 1.2 1 0.8 0.6 -50 0.04 0.03 o TA = 125 C 0.02 TA = 25o C 0.01 0 -25 0 25 50 75 100 o TJ , JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation with Temperature 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000 100 VGS = 0V 80 o T A = -55 C -I S, REVERSE DRAIN CURRENT (A) VD S = -5V -I D , DRAIN CURRENT (A) 2.2 o 125 C 60 o 25 C 40 20 0 100 10 TA = 125o C 1 o 0.1 25 C 0.01 o -55 C 0.001 0.0001 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDD6637 Rev. 1.2 5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Typical Characteristics 3200 I D = -14A VDS = 10V f = 1MHz VGS = 0 V 30V 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 4 2400 C iss 1600 C oss 800 2 C rss 0 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 Figure 7. Gate Charge Characteristics 30 P(pk), PEAK TRANSIENT POWER (W) 100 100µs 1ms 10ms 100ms 1s 100 -I D , DRAIN CURRENT (A) 10 15 20 25 VD S, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics 1000 R DS(ON) LIMIT 10 10s DC 1 VGS = -10V SINGLE PULSE o R θJA = 96 C/W 0.1 o T A = 25 C SINGLE PULSE Rθ JA = 96°C/W T A = 25°C 80 60 40 20 0 0.01 0.01 0 0 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 100 1 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 100 1000 SINGLE PULSE Rθ JA = 96°C/W T A = 25°C 80 I (AS) , AVALANCHE CURRENT I(pk), PEAK TRANSIENT CURRENT (A) 5 o 100 60 40 20 0 0.01 0.1 1 10 100 t1 , TIME (sec) Figure 11. Single Pulse Maximum Peak Current FDD6637 Rev. 1.2 1000 TJ = 25 C 10 1 0.001 0.01 0.1 1 10 tA V, TIME IN AVANCHE(ms) Figure 12. Unclamped Inductive Switching Capability www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 Rθ JA(t) = r(t) * RθJA Rθ JA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J - T A = P * Rθ JA (t) Duty Cycle, D = t1 / t 2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6637 Rev. 1.2 www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Typical Characteristics L VDS BVDSS tP VG RGEN DUT VDD VDD + 0V VGS VDS IAS - tp vary tP to obtain required peak IAS IAS 0.01Ω tAV Figure 14. Unclamped Inductive Load Test Circuit Figure 15. Unclamped Inductive Waveforms Drain Current Regulator Same type as DUT + 10µF QG 10V 50kΩ 10V - 1µF + QGD Q GS VGS VDD VG DUT Charge, (nC) Ig(REF) Figure 16. Gate Charge Test Circuit VDS RL t ON DUT VDS Pulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 18. Switching Time Test Circuit tf tr 10% 0V 90% 10% 90% V GS 0V td(OFF) 90% VDD + VGS FDD6637 Rev. 1.2 tOFF t d(ON) VGS RGEN Figure 17. Gate Charge Waveform 50% 10% 50% Pulse Width Figure 19. Switching Time Waveforms www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Test Circuits and Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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