FDD6637-F085

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Other names and brands may be claimed as the property of others. ® P-Channel PowerTrench MOSFET -35V, -21A, 18mΩ Applications „ Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A „ Inverter „ Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A „ Power Supplies „ Typ Qg(10) = 45nC at VGS = -10V „ „ High performance trench technology for extremely low rDS(on). „ „ Qualified to AEC Q101 „ RoHS Compliant ©2010 Semiconductor Components Industries, LLC. September-2017, Rev. 3 1 ® MOSFET Features FDD6637-F085 P-Channel PowerTrench FDD6637-F085 Publication Order Number: FDD6637-F085/D Symbol VDSS Parameter Ratings -35 Drain to Source Voltage VDS(Avalanche) Drain to Source Avalanche Voltage (maximum) VGS ID EAS PD TJ, TSTG Gate to Source Voltage Units V -45 V ±25 V Drain Current Continuous (TC < 155oC, VGS = 10V) -21 Pulsed A See Figure 4 Single Pulse Avalanche Energy (Note 1) 61 mJ Power Dissipation 68 W Dreate above 25oC 0.46 W/oC Operating and Storage Temperature o -55 to + 175 C Thermal Characteristics RθJC Maximum Thermal Resistance Junction to Case 2.2 o C/W RθJA Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 40 o C/W Package Marking and Ordering Information Device FDD6637-F085 Package TO-252 Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V -35 - - V IDSS Zero Gate Voltage Drain Current VDS = -28V, VGS = 0V - - -1 μA IGSS Gate to Source Leakage Current VGS = ±25V - - ±100 nA VGS = VDS, ID = -250μA -1 -1.6 -3 V - 9.7 11.6 On Characteristics VGS(th) Gate to Source Threshold Voltage ID = -14A, VGS= -10V rDS(on) gFS Drain to Source On Resistance Forward Transconductance ID = -11A, VGS= -4.5V - 14.4 18 ID = -14A, VGS= -10V, TC = 150oC - 15.3 18 VDS = -5V, ID = -14A - 35 - VDS = -20V, VGS = 0V, f = 1MHz - 2370 - pF - 470 - pF pF mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 250 - RG Gate Resistance f = 1MHz - 3.6 - Ω Qg(TOT) Total Gate Charge at -10V VGS = 0 to -10V - 45 63 nC Qg(5) Total Gate Charge at -5V VGS = 0 to -5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge www.onsemi.com 2 VDD = -20V ID = -14A - 25 35 nC - 7 - nC - 10 - nC ® MOSFET Device Marking FDD6637 FDD6637-F085 P-Channel PowerTrench MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units - 18 32 ns - 10 20 ns - 62 100 ns - 36 58 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = -20V, ID = -1A, VGS = -10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = -14A IF = -14A, dISD/dt = 100A/μs - -0.8 -1.2 V - 28 37 ns - 15 20 nC Notes: 1: Starting TJ = 25oC, L = 1mH, IAS = -11A, VGS=10V, VDD=-35V during the inductor charging time and 0V during the time in avalanche FDD6637-F085 P-Channel PowerTrench Electrical Characteristics TC = 25oC unless otherwise noted ® MOSFET This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ www.onsemi.com 3 -ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 70 1.2 1.0 0.8 0.6 0.4 0.2 CURRENT LIMITED BY PACKAGE 60 50 VGS = -10V 40 30 VGS = -4.5V 20 10 o RθJC = 2.2 C/W 0.0 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 1. Normalized Power Dissipation vs Case Temperature 25 50 75 100 125 150 175 o TC, CASE TEMPERATURE ( C) Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZθJC D = 0.50 0.20 0.10 0.05 0.02 0.01 ® MOSFET DUTY CYCLE - DESCENDING ORDER 1 PDM t1 0.1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 VGS = 10V TC = 25oC -IDM, PEAK CURRENT (A) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 0 10 FDD6637-F085 P-Channel PowerTrench Typical Characteristics 1 10 60 100 100us 1ms 10ms DC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 0.3 SINGLE PULSE TJ = MAX RATED TC = 25oC 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = -55oC TJ = 25oC 60 o TJ = 175 C 40 20 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 60 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 80 60 40 30 0 TJ = 175oC TJ = 25oC 2 4 6 VGS = -10V VGS = -6V VGS = -5V VGS = -4.5V VGS = -4V VGS = -3.5V VGS = -3V 20 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics 50 10 100 40 6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 20 10 Figure 6. Unclamped Inductive Switching Capability 8 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = -14A 1 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 Figure 7. Transfer Characteristics 70 0.1 tAV, TIME IN AVALANCHE (ms) -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VDD = -5V 0.01 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 80 1 0.001 ® MOSFET 100 STARTING TJ = 150oC 90 Figure 5. Forward Bias Safe Operating Area rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) STARTING TJ = 25oC 10 10 0 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] -IAS, AVALANCHE CURRENT (A) -ID, DRAIN CURRENT (A) 300 1.8 1.6 1.2 1.0 0.6 -80 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 0.8 ID = -14A VGS = -10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 5 FDD6637-F085 P-Channel PowerTrench Typical Characteristics 1.3 1.10 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) Ciss 1000 Coss f = 1MHz VGS = 0V 100 0.1 Crss 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 13. Capacitance vs Drain to Source Voltage 100 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 10 ® MOSFET 10000 ID = -250μA Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature -VGS, GATE TO SOURCE VOLTAGE(V) NORMALIZED GATE THRESHOLD VOLTAGE 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = -250μA VDD = -10V 8 VDD = -20V 6 VDD = -30V 4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 50 Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 6 FDD6637-F085 P-Channel PowerTrench Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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