FDD8445

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD8445 N-Channel PowerTrench® MOSFET 40V, 50A, 8.7m Features Applications  RDS(ON) = 6.7 m (Typ), VGS = 10V, ID=50A  Powertrain Management  Qg(10) = 45nC (Typ), VGS=10V  Electronic Transmission  Low Miller Charge  Distributed Power Architecture and VRMs  Low Qrr Body Diode  Primary Switch for 12V Systems  UIS Capability (Single Pulse/ Repetitive Pulse)   RoHS Compliant D G S ©2007 Fairchild Semiconductor Corporation FDD8445 Rev. 1.3 1 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET April 2015 Symbol VDSS Drain to Source Voltage Parameter Ratings 40 Units V VGS Gate to Source Voltage ±20 V 70 A 15.2 A Drain Current Continuous (VGS=10v) (Note 1) Continuous (VGS=10v,with RJA = 52oC/W) ID Pulsed EAS PD TJ, TSTG Figure 4 Single Pulse Avalanche Energy (Note 2) 144 Power Dissipation 79 W Derate above 25oC 0.53 W/oC Operating and Storage Temperature mJ o -55 to +175 C Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-252, lin2 copper pad area 1.9 oC/W 52 oC/W Package Marking and Ordering Information Device Marking FDD8445 Device FDD8445 Package TO-252AA Reel Size 13” Tape Width 16mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 40 - - V - - 1 A Off Characteristics Drain to Source Breakdown Voltage ID = 250A, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V - - 250 IGSS Gate to Source Leakage Current VGS = 20V - - 100 nA VDS = VGS, ID = 250A 2 2.8 4 V ID = 50A, VGS = 10V - 6.7 8.7 ID = 50A, VGS = 10V, TJ = 175°C - 12.5 16.3 VDS = 25V, VGS = 0V, f = 1MHz - 3040 4050 pF - 295 390 pF pF BVDSS TJ=150°C On Characteristics VGS(th) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance m Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance - 178 270 RG Gate Resistance f = 1MHz - 1.7 -  Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 45 59 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V - 17 22 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 5.8 7.6 nC Qgs Gate to Source Gate Charge - 12.5 - nC Qgs2 Gate Charge Threshold to Plateau - 9.5 - nC Qgd Gate to Drain “Miller” Charge - 10.5 - nC FDD8445 Rev. 1.3 2 VDD = 20V, ID = 50A www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings Tc = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 138 ns td(on) Turn-On Delay Time - 10 - ns tr Turn-On Rise Time - 82 - ns td(off) Turn-Off Delay Time - 26 - ns tf Turn-Off Fall Time - 9.6 - ns toff Turn-Off Time - - 53 ns V VDD = 20V, ID = 50A VGS = 10V, RGS = 2 Drain-Source Diode Characteristics ISD=50A - - 1.25 ISD=25A - - 1.0 V Reverse Recovery Time IF= 50A, dIF/dt=100A/s - - 39 ns Reverse Recovery Charge IF= 50A, dIF/dt=100A/s - - 38 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Maximum package current capability is 50A. 2: Starting TJ = 25oC, L=0.18mH, IAS=40A. FDD8445 Rev. 1.3 3 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 80 VGS=10V CURRENT LIMITED BY PACKAGE 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 60 40 20 0.2 0.0 0 25 50 75 100 125 150 0 25 175 o TC , CASE TEMPERATURE( C) Figure 1. Normalized Power Dissipation vs Case Temperature 50 75 100 125 o TC, CASE TEMPERATURE( C) 150 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.01 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 VGS = 10V IDM, PEAK CURRENT (A) 1000 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDD8445 Rev. 1.3 4 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Typical Characteristics 200 IAS, AVALANCHE CURRENT (A) 1000 ID, DRAIN CURRENT (A) 100 100us 10 CURRENT LIMITED BY PACKAGE 1 0.1 1 1ms OPERATION IN THIS SINGLE PULSE AREA MAY BE TJ = MAX RATED LIMITED BY rDS(ON) TC = 25oC 10ms DC 10 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 10us O STARTING TJ = 25 C 10 O STARTING TJ = 150 C 1 0.01 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Indutive Switching Capability Figure 5. Forward Bias Safe Operating Area 120 140 VDD = 6V 80 5.0V ID, DRAIN CURRENT (A) 100 ID, DRAIN CURRENT (A) 120 PULSE DURATION=80s DUTY CYCLE=0.5% MAX O TJ = 175 C 60 O TJ = 25 C 40 O TJ = - 55 C 20 0 2.0 4.5V 60 40 4.0V 20 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.0 6.0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 Figure 8. Saturation Characteristics 20 2.0 PULSE DURATION=80S DUTY CYCLE=0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (m ) PULSE DURATION =80S DUTY CYCLE =0.5% MAX 80 Figure 7. Transfer Characteristics ID=12A 16 TJ = 175oC 12 8 4 VGS=10V 100 TJ = 25oC 3.5 4.5 6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V) 10 PULSE DURATION =80S DUTY CYCLE =0.5% MAX 1.6 1.4 1.2 1.0 ID = 50A VGS = 10V 0.8 0.6 -80 -40 0 40 80 120 160 200 o TJ, JUNCTION TEMPERATURE( C) Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Drain to Source On-Resistance Variation vsGate to Source Voltage FDD8445 Rev. 1.3 1.8 5 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Typical Characteristics 1.10 1.2 ID =250A NORMALIZED GATE THRESHOLD VOLTAGE 1.1 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS=VDS 1.0 0.9 0.8 0.7 0.6 0.5 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 0.95 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 200 10 1000 VGS, GATE TO SOURCE VOLTAGE(V) f = 1MHz VGS = 0V CISS CAPACITANCE (pF) 1.00 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 COSS CRSS VDD=15V ID=50A 8 VDD=20V VDD=25V 6 4 2 0 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 40 Figure 13. Capacitance vs Drain to Source Voltage FDD8445 Rev. 1.3 1.05 0.90 -80 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 100 0.1 ID =250A 20 40 Qg , GATE CHARGE (nC) 60 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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