FDD8445-F085

FDD8445-F085 N-Channel PowerTrench® MOSFET FDD8445-F085 ® N-Channel PowerTrench MOSFET 40V, 50A, 6.7mΩ Features  Typ RDS(on) = 6.7m at VGS = 10V, ID = 50A  Typ Qg(10) = 45nC at VGS = 10V, ID = 50A  Low Miller Charge D  Low Qrr Body Diode  UIS Capability (Single Pulse/ Repetitive Pulse)  RoHS Compliant D G  Qualified to AEC Q101 G Applications S  Automotive Engine Control  Powertrain Management D-PAK TO-252 (TO-252) S  Solenoid and Motor Drivers  Electronic Transmission  Distributed Power Architecture and VRMs  Primary Switch for 12V Systems MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (VGS = 10V) 50 Pulsed A Figure 4 Single Pulse Avalanche Energy (Note 1) 144 mJ Power Dissipation 79 W Derate above 25oC 0.53 W/oC -55 to +175 oC RJC Thermal Resistance Junction to Case 1.9 oC/W RJA Thermal Resistance Junction to Ambient, 1in2 copper pad area 52 oC/W TJ, TSTG Operating and Storage Temperature Package Marking and Ordering Information Device Marking FDD8445 Device FDD8445-F085 Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Starting TJ = 25°C, L = 0.18mH, IAS = 40A 2: A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. ©2016 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: FDD8445-F085/D Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250A, VGS = 0V 40 - - V - - 1 - - 250 A VGS = ±20V - - ±100 nA VGS = VDS, ID = 250A 2 2.8 4 V ID = 50A, VGS= 10V - 6.7 8.7 ID = 50A, VGS= 10V TJ = 175oC - 12.5 16.3 VDS = 25V, VGS = 0V, f = 1MHz - 3040 4050 pF - 295 390 pF pF VDS = 32V, VGS = 0V TA = 150oC On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance m Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 178 270 RG Gate Resistance f = 1MHz - 1.7 -  Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 45 59 nC VGS = 0 to 2V 5.8 7.6 nC - 12.5 - nC - 10.5 - nC Qg(TH) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDD = 20V ID = 50A Switching Characteristics ton Turn-On Time - - 138 ns td(on) Turn-On Delay Time - 10 - ns tr Rise Time - 82 - ns td(off) Turn-Off Delay Time - 26 - ns tf Fall Time - 9.6 - ns toff Turn-Off Time - - 53 ns VDD = 20V, ID = 50A VGS = 10V, RGS = 2 Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 50A - - 1.25 ISD = 25A - - 1.0 ISD = 50A, dISD/dt = 100A/s www.onsemi.com 2 V - - 39 ns - - 38 nC FDD8445-F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 3. Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability www.onsemi.com 3 FDD8445-F085 N-Channel PowerTrench® MOSFET Typical Characteristics Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 4 FDD8445-F085 N-Channel PowerTrench® MOSFET Typical Characteristics Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 5 FDD8445-F085 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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