FDB8445-F085

FDB8445_F085 N-Channel PowerTrench® MOSFET 40V, 70A, 9mΩ Features Applications „ Typ rDS(on) = 6.8mΩ at VGS = 10V, ID = 70A „ Automotive Engine Control „ Typ Qg(10) = 44nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers „ Low Qrr Body Diode „ Electronic Transmission „ UIS Capability (Single Pulse/ Repetitive Pulse) „ Distributed Power Architecture and VRMs „ Qualified to AEC Q101 „ Primary Switch for 12V Systems A REE I DF M ENTATIO LE N MP LE „ RoHS Compliant D GATE G SOURCE TO-263AB DRAIN (FLANGE) S FDB SERIES ©2010 Fairchild Semiconductor Corporation FDB8445_F085 Rev C (W) 1 www.fairchildsemi.com FDB8445_F085 N-Channel PowerTrench® MOSFET October 2010 Symbol VDSS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current Continuous (VGS = 10V) ID (Note 1) Pulsed EAS PD TJ, TSTG Ratings 40 Units V ±20 V 70 A Figure 4 Single Pulse Avalanche Energy 102 (Note 2) mJ Power Dissipation 92 W Derate above 25oC 0.6 W/oC Operating and Storage Temperature o -55 to +175 C Thermal Characteristics RθJC RθJA Maximum Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TO-263, per pad area lin2 cop- 1.63 oC/W 43 oC/W Package Marking and Ordering Information Device Marking FDB8445 Device FDB8445_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V 40 - - V - - 1 μA IGSS Gate to Source Leakage Current VGS = ±20V - - 250 μA - - ±100 nA VDS = VGS, ID = 250μA 2 2.5 4 V ID = 70A, VGS = 10V - 6.8 9 ID = 70A, VGS = 10V, TJ = 175°C - 13 17.2 VDS = 25V, VGS = 0V, f = 1MHz - 2860 3805 pF - 295 395 pF pF TJ =150°C On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 180 270 RG Gate Resistance f = 1MHz - 1.95 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 44 62 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 2.9 4.1 nC Qgs Gate to Source Gate Charge - 11 - nC Qgs2 Gate Charge Threshold to Plateau - 8.2 - nC Qgd Gate to Drain “Miller” Charge - 11 - nC 2 FDB8445_F085 Rev C (W) VDD = 20V, ID = 70A, www.fairchildsemi.com FDB8445_F085 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 45 ns td(on) Turn-On Delay Time - 10 - ns tr Turn-On Rise Time - 19 - ns td(off) Turn-Off Delay Time - 36 - ns tf Turn-Off Fall Time - 16 - ns toff Turn-Off Time - - 81 ns V VDD = 20V, ID = 70A VGS = 10V, RGS = 5Ω Drain-Source Diode Characteristics ISD = 70A - - 1.25 ISD = 35A - - 1.0 V Reverse Recovery Time IF = 70A, di/dt = 100A/μs - - 59 ns Reverse Recovery Charge IF = 70A, di/dt = 100A/μs - - 77 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Maximum wire current carrying capacity is 70A. 2: Starting TJ = 25oC, L = 65uH, IAS = 56A. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 3 FDB8445_F085 Rev C (W) www.fairchildsemi.com FDB8445_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 0.8 0.6 0.4 0.2 0.0 VGS = 10V CURRENT LIMITED BY WIRE 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 100 1.2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 80 60 40 20 0 25 175 Figure 1. Normalized Power Dissipation vs Case Temperature 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A) 1000 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 VGS = 10V SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability 4 FDB8445_F085 Rev C (W) www.fairchildsemi.com FDB8445_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 10us 100 100us 10 SINGLE PULSE TJ = MAX RATED TC = 25oC 1 0.1 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 100 0.1 1 10 100 400 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 140 140 VGS = 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 120 120 VDD = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability 100 80 TJ = 175oC 60 TJ = 25oC 40 TJ = -55oC 20 0 2.0 100 3.0 3.5 4.0 4.5 5.0 5.5 VGS = 5V VGS = 4.5V 80 60 40 VGS = 4V 20 0 2.5 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 6.0 VGS = 3.5V 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 70A 16 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX TJ = 175oC 12 8 TJ = 25oC 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 2.0 1.8 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 70A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage 5 FDB8445_F085 Rev C (W) 4 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) www.fairchildsemi.com FDB8445_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1.2 1.15 NORMALIZED GATE THRESHOLD VOLTAGE 1.1 1.10 1.0 0.9 1.05 0.8 1.00 0.7 0.6 0.95 0.5 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 1000 Coss f = 1MHz VGS = 0V Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 13. Capacitance vs Drain to Source Voltage 200 10 ID = 70A 9 VDD = 15V 8 7 VDD = 20V 6 VDD = 25V 5 4 3 2 1 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 Figure 14. Gate Charge vs Gate to Source Voltage 6 FDB8445_F085 Rev C (W) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 100 0.1 ID = 250μA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250μA www.fairchildsemi.com FDB8445_F085 N-Channel PowerTrench® MOSFET Typical Characteristics *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 7 FDB8445_F085 Rev C (W) www.fairchildsemi.com FDB8445_F085 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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