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FDB8445
N-Channel PowerTrench® MOSFET
40V, 70A, 9mΩ
Features
Applications
Typ rDS(on) = 6.8mΩ at VGS = 10V, ID = 70A
Automotive Engine Control
Typ Qg(10) = 44nC at VGS = 10V
Powertrain Management
Low Miller Charge
Solenoid and Motor Drivers
Low Qrr Body Diode
Electronic Transmission
UIS Capability (Single Pulse/ Repetitive Pulse)
Distributed Power Architecture and VRMs
Qualified to AEC Q101
Primary Switch for 12V Systems
A
REE I
DF
M ENTATIO
LE
N
MP
LE
RoHS Compliant
D
GATE
G
SOURCE
TO-263AB
DRAIN
(FLANGE)
S
FDB SERIES
©2006 Fairchild Semiconductor Corporation
FDB8445 Rev A1 (W)
1
www.fairchildsemi.com
FDB8445 N-Channel PowerTrench® MOSFET
January 2006
Symbol
VDSS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current Continuous (VGS = 10V)
ID
(Note 1)
Pulsed
EAS
PD
TJ, TSTG
Ratings
40
Units
V
±20
V
70
A
Figure 4
Single Pulse Avalanche Energy
(Note 2)
102
mJ
Power Dissipation
92
W
Derate above 25oC
0.6
W/oC
Operating and Storage Temperature
o
-55 to +175
C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-263,
area
1in2
copper pad
1.63
oC/W
43
oC/W
Package Marking and Ordering Information
Device Marking
FDB8445
Device
FDB8445
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
40
IDSS
Zero Gate Voltage Drain Current
VDS = 32V
VGS = 0V
-
-
-
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
TJ =150°C
-
-
V
1
µA
-
250
µA
-
±100
nA
V
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VDS = VGS, ID = 250µA
2
2.5
4
ID = 70A, VGS = 10V
-
6.8
9
ID = 70A, VGS = 10V,
TJ = 175°C
-
13
17.2
-
2860
3805
pF
-
295
395
pF
-
180
270
pF
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
f = 1MHz
-
1.95
-
W
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
-
44
62
nC
Qg(TH)
Threshold Gate Charge
VGS = 0 to 2V
-
2.9
4.1
nC
Qgs
Gate to Source Gate Charge
-
11
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
8.2
-
nC
Qgd
Gate to Drain Charge
-
11
-
nC
VDS = 25V, VGS = 0V,
f = 1MHz
2
FDB8445 Rev A1 (W)
VDS= 20V,
ID = 70A,
www.fairchildsemi.com
FDB8445 N-Channel PowerTrench® MOSFET
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
Turn-On Time
-
-
45
ns
td(on)
Turn-On Delay Time
-
10
-
ns
tr
Turn-On Rise Time
-
19
-
ns
td(off)
Turn-Off Delay Time
-
36
-
ns
tf
Turn-Off Fall Time
-
16
-
ns
toff
Turn-Off Time
-
-
81
ns
VDD = 20V, ID = 70A
VGS = 10V, RGS = 5Ω
Drain-Source Diode Characteristics
ISD = 70A
-
-
1.25
V
ISD = 35A
-
-
1.0
V
Reverse Recovery Time
IF = 70A, di/dt = 100A/µs
-
-
59
ns
Reverse Recovery Charge
IF = 70A, di/dt = 100A/µs
-
-
77
nC
VSD
Source to Drain Diode Voltage
trr
Qrr
Notes:
1: Maximum wire current carrying capacity is 70A.
2: Starting TJ = 25oC, L = 65µH, IAS = 56A.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
3
FDB8445 Rev A1 (W)
www.fairchildsemi.com
FDB8445 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
100
POWER DISSIPATION MULIPLIER
1.2
ID, DRAIN CURRENT (A)
0.8
0.6
0.4
0.2
0.0
VGS = 10V
CURRENT LIMITED
BY WIRE
1.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
60
40
20
0
25
175
Figure 1. Normalized Power Dissipation vs Case
Temperature
80
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
IDM, PEAK CURRENT (A)
TC = 25oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1000
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
100
VGS = 10V
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
4
FDB8445 Rev A1 (W)
www.fairchildsemi.com
FDB8445 N-Channel PowerTrench® MOSFET
Typical Characteristics
500
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
1000
10us
100
100us
10
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
1
0.1
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
10ms
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
100
0.1
1
10
100
400
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
140
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120
VGS = 10V
120
VDD = 5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
140
Figure 6. Unclamped Inductive Switching
Capability
100
80
o
TJ = 175 C
60
TJ = 25oC
40
TJ = -55oC
20
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
100
VGS = 4.5V
60
40
VGS = 4V
20
0
6.0
VGS = 5V
80
VGS = 3.5V
0
VGS, GATE TO SOURCE VOLTAGE (V)
20
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
ID = 70A
16
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 175oC
12
8
TJ = 25oC
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. On-Resistance vs Gate to Source
Voltage
2.0
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 70A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
FDB8445 Rev A1 (W)
4
Figure 8. Saturation Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 7. Transfer Characteristics
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
www.fairchildsemi.com
FDB8445 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.2
1.15
NORMALIZED GATE
THRESHOLD VOLTAGE
1.1
1.10
1.0
0.9
1.05
0.8
1.00
0.7
0.6
0.95
0.5
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.90
-80
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
CAPACITANCE (pF)
Ciss
1000
Coss
f = 1MHz
VGS = 0V
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
Figure 13. Capacitance vs Drain to Source
Voltage
200
10
ID = 70A
9
VDD = 15V
8
7
VDD = 20V
6
VDD = 25V
5
4
3
2
1
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
50
Figure 14. Gate Charge vs Gate to Source Voltage
6
FDB8445 Rev A1 (W)
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
100
0.1
ID = 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
VGS = VDS
ID = 250µA
www.fairchildsemi.com
FDB8445 N-Channel PowerTrench® MOSFET
Typical Characteristics
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The datasheet is printed for reference information only.
Rev. I17
FDB8445 Rev A1 (W)
7
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FDB8445 N-Channel PowerTrench® MOSFET
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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