SI8445DB-T2-E1

Si8445DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5 Qg (Typ.) COMPLIANT APPLICATIONS • Portable Devices - Battery Management - Low Threshold Load Switch - Battery Protection Backside View G S 1 D 3 XXX 2 8445 S RoHS 9.5 nC MICRO FOOT Bump Side View • TrenchFET® Power MOSFET • Ultra Small 1.2 mm Length x 1 mm Width • Ultra Thin 0.59 mm Height S G 4 Device Marking: 8445 xxx = Date/Lot Traceability Code D Ordering Information: Si8445DB-T2-E1 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±5 Continuous Drain Current (TJ = 150 °C) TC = 25 °C - 9.8 TC = 70 °C - 7.9 TA = 25 °C ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD IR/Convection - 10 - 9.5 - 1.5a, b 7.3 1.8a, b W 1.1a, b TJ, Tstg Operating Junction and Storage Temperature Range A 11.4 TA = 70 °C Package Reflow Conditionsc V - 3.9a, b - 3.1a, b TA = 70 °C Unit - 55 to 150 260 °C Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TC = 25 °C. Document Number: 69984 S-82768-Rev. C, 17-Nov-08 www.vishay.com 1 Si8445DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Steady State Typical Maximum RthJA 55 70 RthJF 8.5 11 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 100 °C/W. c. Case is defined as top surface of the package. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V - 19 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.85 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistance Forward Transconductancea a RDS(on) gfs VDS ≤ - 5 V, VGS = - 4.5 V 2.3 - 0.35 -5 µA A VGS = - 4.5 V, ID = - 1 A 0.070 0.084 VGS = - 2.5 V, ID = - 1 A 0.082 0.100 VGS = - 1.8 V, ID = - 1 A 0.097 0.120 VGS = - 1.5 V, ID = - 0.7 A 0.115 0.155 VGS = - 1.2 V, ID = - 0.2 A 0.165 0.495 VDS = - 10 V, ID = - 1 A 6.5 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 700 VDS = - 10 V, VGS = 0 V, f = 1 MHz 80 VDS = - 10 V, VGS = - 5 V, ID = - 1 A VDS = - 10 V, VGS = - 4.5 V, ID = 1 A td(off) tf 10.5 16 9.5 15 0.9 nC 2.2 VGS = - 0.1 V, f = 1 MHz td(on) tr pF 130 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 5.5 11 20 25 40 37 55 10 15 ns Document Number: 69984 S-82768-Rev. C, 17-Nov-08 Si8445DB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 9.5 - 10 IS = - 1 A, VGS = 0 V IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.7 - 1.2 V 25 50 ns 10 20 nC 9 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69984 S-82768-Rev. C, 17-Nov-08 www.vishay.com 3 Si8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 5 VGS = 5 thru 2 V 4 6 I D - Drain Current (A) I D - Drain Current (A) 8 VGS = 1.5 V 4 2 3 TC = 125 °C 2 TC = 25 °C 1 VGS = 1 V TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 0 0.0 2.5 0.3 VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 1200 VGS = 1.2 V 900 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.25 0.20 VGS = 1.5 V VGS = 1.8 V 0.15 VGS = 2.5 V 0.10 Ciss 600 300 0.05 Coss VGS = 4.5 V Crss 0.00 0 0 2 4 6 8 10 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.4 5 ID = 1 A VGS = 4.5 V, 2.5 V, 1.8 V, ID = 1 A 1.3 4 3 VDS = 10 V VDS = 16 V 2 1 VGS = 1.5 V, ID = 0.7 A 1.2 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.1 VGS = 1.2 V, ID = 0.5 A 1.0 0.9 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 10 12 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69984 S-82768-Rev. C, 17-Nov-08 Si8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.25 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 1 A TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0.20 0.15 TJ = 125 °C 0.10 0.05 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 25 0.8 0.7 20 Power (W) VGS(th) (V) 0.6 ID = 250 µA 0.5 15 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms, 1 s 10 s DC 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69984 S-82768-Rev. C, 17-Nov-08 www.vishay.com 5 Si8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 12 8 Power Dissipation (W) I D - Drain Current (A) 10 Package Limited 6 4 9 6 3 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69984 S-82768-Rev. C, 17-Nov-08 Si8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 69984 S-82768-Rev. C, 17-Nov-08 www.vishay.com 7 Si8445DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 x 2, 0.5 mm PITCH) 3 1 4 e A1 A 2 A2 4 x Ø 0.24 to 0.26 Note 4 Solder Mask ~ Ø 0.25 Bump Note 2 e S D G e 8445 S s2 XXX D 4xØb Recommended Land s1 Mark on Backside of die e E Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ∅ 0.30 to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of pin 1. · Dim. Millimetersa Inches Min. Nom. Max. Min. Nom. Max. A 0.510 0.550 0.590 0.0201 0.0217 0.0232 A1 0.220 0.250 0.280 0.0087 0.0098 0.0110 A2 0.290 0.300 0.310 0.0114 0.0118 0.0122 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s1 0.330 0.340 0.350 0.0130 0.0134 0.0138 s2 0.230 0.240 0.250 0.0090 0.0094 0.0098 D 0.960 0.980 1.000 0.0378 0.0388 0.0394 E 1.160 1.180 1.200 0.0457 0.0465 0.0472 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69984. www.vishay.com 8 Document Number: 69984 S-82768-Rev. 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