FDN5618P

FDN5618P FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses ON Semiconductor’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS(ON) = 0.170 Ω @ VGS = –10 V RDS(ON) = 0.230 Ω @ VGS = –4.5 V Applications • Fast switching speed • DC-DC converters • High performance trench technology for extremely low RDS(ON) • Load switch • Power management D D S TM SuperSOT -3 Absolute Maximum Ratings Symbol S G G TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –60 V VGSS Gate-Source Voltage ±20 V ID Drain Current –1.25 A – Continuous (Note 1a) – Pulsed –10 Maximum Power Dissipation PD TJ, TSTG (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range –55 to +150 W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 250 °C/W (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 618 FDN5618P 7’’ 8mm 3000 units 2000 Semiconductor Components Industries, LLC. October-2017, Rev.3 Publication Order Number: FDN5618P/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –58 mV/°C Off Characteristics –60 V BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ===∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –48 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA On Characteristics (Note 2) –1 –1.6 –3 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ===∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C 4 Static Drain–Source On–Resistance 0.148 0.185 0.245 ID(on) On–State Drain Current VGS = –10 V, ID = –1.25 A VGS = –4.5 V, ID = –1.0 A VGS = –10 V, ID = –3 A TJ=125°C VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –1.25 A 4.3 VDS = –30 V, f = 1.0 MHz V GS = 0 V, 430 pF 52 pF 19 pF mV/°C 0.170 0.230 0.315 –5 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –30 V, VGS = –10 V, VDS = –30 V, VGS = –10 V ID = –1 A, RGEN = 6 Ω ID = –1.25 A, 6.5 13 ns 8 16 ns 16.5 30 ns 4 8 ns 8.6 13.8 nC 1.5 nC 1.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –0.42 Voltage (Note 2) –0.7 –0.42 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0 www.onsemi.com 2 FDN5618P Electrical Characteristics FDN5618P Typical Characteristics 5 2.2 VGS = -10V 2 -6.0V 4 -4.5V VGS = -3.0V -4.0V -3.5V 1.8 -3.0V 3 1.6 -3.5V 1.4 2 -4.0V -4.5V 1.2 1 -2.5V -6.0V -10V 1 0.8 0 0 1 2 3 0 4 1 2 3 4 5 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 1.3 ID = -1.25A VGS = -10V ID = -0.65 A 1.2 0.5 1.1 0.4 1 0.3 0.9 0.2 o TA = 125 C o TA = 25 C 0.8 -50 -25 0 25 50 75 100 125 150 0.1 2 4 o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. 10 10 VGS = 0V o o 25 C TA = 125 C 5 8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 6 VDS = - 5V 6 -VGS, GATE TO SOURCE VOLTAGE (V) 1 o -55 C 4 o TA = 125 C 0.1 o 25 C 3 o -55 C 0.01 2 0.001 1 0.0001 0 1 1.5 2 2.5 3 3.5 4 0 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDN5618P Typical Characteristics 700 10 VDS = -20V ID = -1.25A 8 f = 1MHz VGS = 0 V 600 -30V -40V 500 6 CISS 400 300 4 200 2 COSS 100 CRSS 0 0 0 2 4 6 8 0 10 2 Figure 7. Gate Charge Characteristics. 6 8 10 20 10 12 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) RDS(ON) LIMIT 1ms SINGLE PULSE RθJA = 270°C/W TA = 25°C 15 10ms 1 100ms 0.1 DC VGS =-10V SINGLE PULSE RθJA = 270oC/W 0.01 10s 10 1s 5 o TA = 25 C 0 0.001 0.1 1 10 100 0.001 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 1 1 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 0.1 10 t1, TIME (sec) RθJA = 270 °C/W 0.05 0.02 P(pk) 0.01 t1 0.01 t2 SINGLE PULSE TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. 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