FDP6030BL

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low RDS(ON). • 175°C maximum junction temperature rating. D D G G D G TO-220 S FDP Series S TO-263AB S FDB Series Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted FDP6030BL Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Maximum Drain Current - Continuous (Note 1) V V A 120 Total Power Dissipation @ TC = 25°C Derate above 25°C TJ, TSTG Units 30 ±20 40 - Pulsed PD FDB6030BL 60 -65 to +175 W W/°C °C 0.36 Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDB6030BL FDB6030BL 13’’ 24mm 800 FDP6030BL FDP6030BL Tube N/A 45 2000 Fairchild Semiconductor International FDP6030BL/FDB6030BL Rev.C FDP6030BL/FDB6030BL July 2000 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions DRAIN-SOURCE AVALANCHE RATINGS WDSS IAR Min Typ Max Units 150 mJ 40 A (Note 1) Single Pulse Drain-Source VDD = 15 V, ID = 40 A Avalanche Energy Maximum Drain-Source Avalnche Current Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse IGSSR On Characteristics 30 V mV/°C 23 VGS = 20 V, VDS = 0 V 100 µA nA VGS = -20 V, VDS = 0 V -100 nA 3 V mV/°C 0.018 0.030 0.024 Ω 1 (Note 1) VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage ID(on) On-State Drain Current VGS = 10 V, ID = 20 A, VGS = 10 V, ID = 20 A, TJ = 125°C VGS = 4.5 V,ID = 17 A VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 5 V, ID = 20 A Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance 1 1.6 -4.5 0.015 0.021 0.019 40 A 30 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) VDS = 15 V, VGS = 0 V, f = 1.0 MHz 1160 pF 250 pF 100 pF (Note 1) VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 9 17 11 20 ns Turn-Off Delay Time 23 37 ns tf Turn-Off Fall Time 8 16 ns Qg Total Gate Charge 12 17 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 15 V, ID = 20 A, VGS = 5 V ns 3.2 nC 3.7 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current (Note 1) VSD Drain-Source Diode Forward Voltage (Note 1) VGS = 0 V, IS = 20 A 0.95 40 A 1.2 V Note: 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDP6030BL/FDB6030BL Rev.C FDP6030BL/FDB6030BL Electrical Characteristics FDP6030BL/FDB6030BL Typical Characteristics 2.6 VGS = 10V 6.0V 5.0V 4.5V 70 60 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 80 4.0V 50 40 3.5V 30 20 3.0V 10 2.4 2.2 VGS = 3.0V 2 1.8 3.5V 1.6 4.0V 1.4 5.0V 7.0V 1 10V 0.8 0 0 1 2 3 4 0 5 10 20 Figure 1. On-Region Characteristics. 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 1.8 ID = 20A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 ID = 10 A 0.05 0.04 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 VGS = 0V 0.6 0 -50 -25 0 25 50 75 100 125 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 VGS = 0V o IS, REVERSE DRAIN CURRENT (A) TA = -55 C VDS = 5V o 25 C ID, DRAIN CURRENT (A) 4.5V 1.2 40 o 125 C 30 20 10 0 10 o TA = 125 C 1 o 25 C o -55 C 0.1 0.01 0.001 0.0001 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6030BL/FDB6030BL Rev.C (continued) 1600 ID = 20A VDS = 5V 10V 8 f = 1 MHz VGS = 0 V 1400 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 1200 CISS 1000 800 600 400 COSS 200 CRSS 0 0 0 5 10 15 20 0 25 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 2500 1000 VGS = 10V SINGLE PULSE TC = 25 C RDS(ON) LIMIT POWER (W) 10µs 100µs 1ms o 100 SINGLE PULSE R θJC =2.5°C/W TC = 25°C 2000 o RθJC = 2.5 C/W 10ms 100ms DC 10 1500 1000 500 1 0.1 1 10 100 0 0.01 0.1 1 10 100 1,000 SINGLE PULSE TIME (mSEC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) FDP6030BL/FDB6030BL Typical Characteristics D = 0.5 0.5 0.3 R θJC (t) = r(t) * RθJC R θJC = 2.5 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.02 t1 0.03 0.01 0.02 0.01 0.01 t2 TJ - TC = P * RθJC (t) Single Pulse Duty Cycle, D = t1 /t2 0.1 1 10 100 1000 t1 ,TIME (ms) Figure 11. Transient Thermal Response Curve. FDP6030BL/FDB6030BL Rev.C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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