FDD6030BL

FDD6030BL/FDU6030BL July 2001 FDD6030BL/FDU6030BL 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Features • 42 A, 30 V RDS(ON) = 16 mΩ @ V GS = 10 V RDS(ON) = 22 mΩ @ V GS = 4.5 V • Low gate charge (22 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Motor drives D G S D-PAK TO-252 (TO-252) D I-PAK (TO-251AA) GDS G S Absolute Maximum Ratings Symbol V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Units V V A Continuous Drain Current @TC=25°C @TA =25°C Pulsed 42 10 100 50 3.8 1.6 –55 to +175 PD Power Dissipation @TC=25°C @TA =25°C @TA =25°C W TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ J C Rθ JA Rθ JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 3.0 45 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD6030BL FDU6030BL Device FDD6030BL FDU6030BL Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 © 2001 Fairchild Semiconductor Corporation FDD6030BL/FDU6030BL Rev C(W) FDD6030BL/FDU6030BL Electrical Characteristics Symbol WDSS IAR BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, V DD = 15 V Min Typ Max 130 10 Units mJ A V Drain-Source Avalanche Ratings (Note 2) Off Characteristics Drain–Source Breakdown Voltage V GS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA,Referenced to 25°C Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) 30 22 1 100 –100 mV/°C µA nA nA V DS = 24 V, V GS = 20 V, V GS = –20 V, V GS = 0 V V DS = 0 V V DS = 0 V On Characteristics V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C V GS V GS V GS V GS = 10 V, = 4.5 V, = 10 V, = 10 V, ID = 10 A ID = 8.4 A ID = 10 A, TJ =125°C V DS = 5 V ID = 10 A 1 1.6 –4 12 17 19 3 V mV/°C mΩ 16 22 26 ID(on) gFS 50 29 A S V DS = 10 V, Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ( Note 2) V DS = 15 V, f = 1.0 MHz V GS = 0 V, 1143 249 107 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 6 V DD = 15 V, V GS = 10 V, ID = 1 A, RGEN = 6 Ω 10 18 5 V DS = 15V, V GS = 10 V ID = 10 A, 22 3 4 12 18 29 12 31 ns ns ns ns nC nC nC FDD6030BL/FDU6030BL Rev. C(W) FDD6030BL/FDU6030BL Electrical Characteristics Symbol IS V SD Notes: TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max 3.2 1.2 Units A V Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = 3.2 A Voltage (Note 2) 0.7 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6030BL/FDU6030BL Rev. C(W) FDD6030BL/FDU6030BL Typical Characteristics 80 V GS = 10V 6.0V 5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 2.2 V GS = 3.5V 2 1.8 4.0V 1.6 1.4 6.0V 1.2 1 0.8 0 1 2 3 4 5 0 20 40 ID, DRAIN CURRENT (A) 60 80 VDS , DRAIN-SOURCE VOLTAGE (V) 10V 4.5V 5.0V ID, DRAIN CURRENT (A) 60 4.0V 40 3.5V 20 3.0V 0 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.06 2 R DS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ , JUNCTION TEMPERATURE (oC) ID = 10A VGS = 10V ID = 5 A RDS(ON) ON-RESISTANCE (OHM) , 0.05 0.04 TA = 125o C 0.03 0.02 TA = 25 oC 0.01 0 2 4 6 8 10 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature 60 V DS = 5V 50 ID, DRAIN CURRENT (A) 40 T A =-55o C 25oC IS, REVERSE DRAIN CURRENT (A) 125 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 VGS = 0V 10 T A = 125o C 1 25oC 0.1 -55o C 0.01 30 20 10 0.001 0 1 2 3 4 5 V GS, GATE TO SOURCE VOLTAGE (V) 0 .0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6030BL/FDU6030BL Rev. C(W) FDD6030BL/FDU6030BL Typical Characteristics 10 V GS, GATE-SOURCE VOLTAGE (V) ID = 10A 8 15V 6 CAPACITANCE (pF) VDS = 5V 10V 1600 f = 1MHz V GS = 0 V 1200 CISS 800 4 COSS 400 2 0 0 4 8 12 16 20 24 Q g, GATE CHARGE (nC) CRSS 0 0 5 10 15 20 25 30 V D S DRAIN TO SOURCE VOLTAGE (V) , Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics 100 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 100µs 1m 10ms 100ms 1s 10s 80 SINGLE PULSE R θJA = 96°C/W TA = 25°C 60 1 V GS = 10V SINGLE PULSE Rθ JA = 96 oC/W TA = 25o C 0.01 0.01 DC 40 0.1 20 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 V DS, DRAIN-SOURCE VOLTAGE (V) t1 , TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 Rθ JA(t) = r(t) + RθJA RθJA = 96 °C/W P(pk) 0.02 0.01 t1 t2 SINGLE PULSE 0.01 T J - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6030BL/FDU6030BL Rev. C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ DISCLAIMER FAST  FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET  VCX™ STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3