FDPF041N06BL1-F154

MOSFET – N-Channel, POWERTRENCH) 60 V, 77 A, 4.1 mW FDPF041N06BL1-F154 Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. www.onsemi.com VDSS RDS(ON) MAX ID MAX 60 V 4.1 mW @ 10 V 77 A Features • • • • • • • • D RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, ID = 77 A Low FOM RDS(on)*QG Low Reverse Recovery Charge, Qrr Soft Reverse Recovery Body Diode Enables Highly Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested These Devices are Pb−Free and are RoHS Compliant G S MOSFET Applications • • • • Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System G D S TO−220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FDPF 041N06BL1 $Y &Z &3 &K FDPF041N06BL1 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 0 1 Publication Order Number: FDPF041N06BL1−F154/D FDPF041N06BL1−F154 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Value Unit VDSS Drain to Source Voltage 60 V VGSS Gate to Source Voltage ±20 V − Continuous (TC = 25°C, Silicon Limited) 77 A − Continuous (TC = 100°C, Silicon Limited) 55 − Pulsed (Note 1) 308 ID Parameter Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) 365 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (TC = 25°C) 44.1 W − Derate Above 25°C 0.29 W/°C −55 to +175 °C 300 °C PD TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8″ from Case for 5 Seconds A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. L = 3 mH, IAS = 15,6 A, starting TJ = 25°C. 3. ISD ≤ 100 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 3.4 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Quantity FDPF041N06BL1−F154 FDPF041N06BL1 TO−220F (Pb−Free) 50 Units / Tube www.onsemi.com 2 FDPF041N06BL1−F154 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 60 − − V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25_C − 0.03 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V − − 1 mA IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA BVDSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 mA 2 − 4 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 77 A − 3.5 4.1 mW Forward Transconductance VDS = 10 V, ID = 77 A − 125 − S VDS = 30 V, VGS = 0 V, f = 1 MHz − 4280 5690 pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 1050 1400 pF Crss Reverse Transfer Capacitance − 23 − pF Coss(er) Energy Related Output Capacitance VDS = 30 V, VGS = 0 V − 1787 − pF Qg(tot) Total Gate Charge at 10 V VDS = 30 V, ID = 100 A, VGS = 10 V (Note 4) − 53 69 nC − 23 − nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge − 8 − nC Gate Plateau Voltage − 5.7 − V Vplateau Qsync Total Gate Charge Sync. VDS = 0 V, ID = 50 A − 48.6 − nC Qoss Output Charge VDS = 30 V, VGS = 0 V − 63.8 − nC VDD = 30 V, ID = 100 A, VGS = 10 V, RGEN = 4.7 W (Note 4) − 29 68 ns − 22 54 ns − 38 86 ns − 11 32 ns − 0,8 − W Maximum Continuous Source to Drain Diode Forward Current − − 77 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 308 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 77 A − − 1.25 V trr Reverse Recovery Time 65 − ns Reverse Recovery Charge VGS = 0 V, ISD = 100 A, dIF/dt = 100 A/ms − Qrr − 63 − nC SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf ESR Turn-Off Fall Time Equivalent Series Resistance (G−S) f = 1 MHz DRAIN−SOURCE DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FDPF041N06BL1−F154 TYPICAL PERFORMANCE CHARACTERISTICS 200 300 10 1 0.1 250 ms Pulse Test TC = 25°C ID, Drain Current (A) 100 ID, Drain Current (A) VDS = 10 V 250 ms Pulse Test 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 1 VDS, Drain−Source Voltage (V) 25°C 175°C 10 1 10 2 Figure 1. On−Region Characteristics IS, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance (mW) TC = 25°C 4,0 VGS = 10 V 3.5 VGS = 20 V 3.0 2.5 2.0 0 50 100 150 200 ID, Drain Current (A) 250 300 1.0 1.2 1.4 0.4 0.6 0.8 VSD, Body Diode Forward Voltage (V) 10 VGS, Gate−Source Voltage (V) Capacitances (pF) 25°C Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss 10 0.1 175°C 10 1 0.2 10000 100 6 VGS = 0 V 250 ms Pulse Test 100 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 1000 4 5 3 VGS, Gate−Source Voltage (V) Figure 2. Transfer Characteristics 200 4,5 −55°C Coss VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss 1 10 VDS, Drain−Source Voltage (V) 6 4 2 0 60 Figure 5. Capacitance Characteristics VDS = 12 V VDS = 30 V VDS = 48 V 8 ID = 100 A 0 20 40 Qg, Total Gate Charge (nC) Figure 6. Gate Charge Characteristics www.onsemi.com 4 60 FDPF041N06BL1−F154 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1.8 VGS = 0 V ID = 250 mA 1.05 1.00 0.95 0.90 −100 −50 50 100 150 0 TJ, Junction Temperature (°C) 1.4 1.2 1.0 0.8 0.6 −100 200 100 100 100 ms 10 1 ms 10 ms 100 ms 0.01 0.1 Operation in this Area is Limited by RDS(on) DC SINGLE PULSE TC = 25°C TJ = 175°C RqJC = 3.4°C/W 1 10 VDS, Drain−Source Voltage (V) 60 40 0 25 100 RqJC = 3.4°C/W 50 150 75 100 125 TC, Case Temperature (°C) 175 Figure 10. Maximum Drain Current 2.0 IAS, Avalanche Current (A) 100 1.5 EOSS, (mJ) VGS = 10 V 20 Figure 9. Maximum Safe Operating Area vs. Case Temperature 1.0 0.5 0.0 200 80 ID, Drain Current (A) ID, Drain Current (A) 1000 0.1 −50 50 100 150 0 TJ, Junction Temperature (°C) Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 1 VGS = 10 V ID = 77 A 1.6 RDS(on), Drain−Source On−Resistance (Normalized) BVDSS, Drain−Source Breakdown Voltage (Normalized) 1.10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) TJ = 25°C 10 TJ = 150°C 1 0.001 60 Figure 11. EOSS vs. Drain to Source Voltage 0.01 0.1 1 10 100 tAV, Time in Avalanche (ms) Figure 12. Unclamped Inductive Switching Capability www.onsemi.com 5 1000 FDPF041N06BL1−F154 TYPICAL PERFORMANCE CHARACTERISTICS (continued) ZqJC, Thermal Response (°C/W) 4 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse PDM t1 0.01 0.001 −5 10 t2 ZqJC(t) = 3.4°C/W Max. Duty Factor, D = t1 / t2 TJM − TC = PDM × ZqJC(t) 10 −4 −3 −2 10 10 t, Rectangular Pulse Duration (s) Figure 13. Transient Thermal Response Curve www.onsemi.com 6 10 −1 1 FDPF041N06BL1−F154 VGS RL Qg 10 V VDS D VGS Qgs Qgd G DUT 1 mA S Charge Figure 14. Gate Charge Test Circuit & Waveform VDS RL VDS 90% 90% 90% VDD VGS RG VGS DUT 10 V 10% td(on) 10% td(off) tr ton tf toff Figure 15. Resistive Switching Test Circuit & Waveforms L E AS + 1 LI AS 2 VDS BVDSS ID IAS RG VDD DUT 10 V 2 ID (t) VDD VDS (t) tp tp Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FDPF041N06BL1−F154 + DUT VDS − ISD L Driver RG Same Type as DUT VGS • dv/dt controlled by RG • ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 8 FDPF041N06BL1−F154 VCC Driver VGS (Driver) t VDD VGS (DUT) 10 V t 10 V V RG RG DUT Qsync + 1 · RG ŕV RG·(t) dt Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD (ULTRA NARROW LEAD) CASE 221BN ISSUE A DATE 07 MAY 2021 GENERIC MARKING DIAGRAM* XXXXXXXXXX G AYWW DOCUMENT NUMBER: DESCRIPTION: XXXX A Y WW G 98AON01135H = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 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