FDS6680A
FDS6680A
Single N-Channel, Logic Level, PowerTrench® MOSFET
Features
General Description
• 12.5 A, 30 V
This N-Channel Logic Level MOSFET is produced
using
ON
Semiconductor’s
advanced
Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Ultra-low gate charge
• High performance trench technology for extremely
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D
D
DD
• High power and current handling capability
G
SS G
S
SS S
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
low RDS(ON)
DD
DD
SO-8
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
– Continuous
Power Dissipation for Single Operation
6
3
7
2
8
1
Ratings
Units
30
V
12.5
A
50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
4
±20
(Note 1a)
– Pulsed
PD
5
TA=25oC unless otherwise noted
Parameter
VDSS
RDS(ON) = 9.5 mΩ @ VGS = 10 V
Operating and Storage Junction Temperature Range
W
1.0
–55 to +150
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Case
(Note 1a)
50
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6680A
FDS6680A
13’’
12mm
2500 units
©2012 Semiconductor Components Industries, LLC.
October-2017, Rev. 6
Publication Order Number:
FDS6680A/D
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
ID = 250 µA
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V,
V
30
25
VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ=55°C
IGSS
VGS = ±20 V,
Gate–Body Leakage
On Characteristics
VDS = 0 V
mV/°C
1
µA
10
µA
±100
nA
(Note 2)
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 15 V,
ID = 12.5 A
64
S
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1620
pF
380
pF
160
pF
Ω
1
VGS = 10 V,
ID = 12.5 A
VGS = 4.5 V,
ID = 10.5 A
VGS = 10 V, ID = 12.5 A, TJ=125°C
2
–4.9
3
7.8
9.9
11.0
9.5
13
15
V
mV/°C
25
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
VGS = 15 mV,
f = 1.0 MHz
1.3
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
10
19
ns
ns
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
5
10
td(off)
Turn–Off Delay Time
27
43
ns
tf
Turn–Off Fall Time
15
27
ns
16
23
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 5 V
ID = 12.5 A,
nC
5
nC
5.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
trr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
(Note 2)
VGS = 0 V, IS = 2.1 A
Voltage
Diode Reverse Recovery Time
IF = 12.5 A, diF/dt = 100 A/µs
Qrr
Diode Reverse Recovery Charge
IS
VSD
0.73
2.1
A
1.2
V
28
ns
18
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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c) 125°C/W when mounted
on a minimum pad.
FDS6680A
Electrical Characteristics
FDS6680A
Typical Characteristics
2.2
50
VGS = 10V
6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
40
4.0V
4.5V
3.5V
30
20
10
3.0V
2
VGS = 3.5V
1.8
1.6
1.4
1
1.5
0.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
5.0V
6.0V
10V
1
2
0
Figure 1. On-Region Characteristics.
10
20
30
ID, DRAIN CURRENT (A)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.03
ID = 12.5A
VGS = 10V
ID = 6.2A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
1.2
0.8
0
1.4
1.2
1
0.8
0.025
0.02
TA = 125oC
0.015
0.01
TA = 25oC
0.005
0.6
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
2
150
Figure 3. On-Resist ance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
40
30
TA = 125oC
o
-55 C
20
10
25oC
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
0
4
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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FDS6680A
Typical Characteristics
2400
f = 1 MHz
VGS = 0 V
ID = 12.5A
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
15V
6
20V
4
1800
Ciss
1200
Coss
600
2
Crss
0
0
0
5
10
15
20
25
30
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
50
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
100µs
ID, DRAIN CURRENT (A)
30
Figure 8. Capacitance Characteristics.
100
1ms
10ms
10
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RθJA = 125oC/W
40
TA = 25oC
30
20
10
0
0.001
100
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
o
RθJA = 125 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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100
1000
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