FDS8433A

FDS8433A FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect transistors is produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. • -5 A, -20 V. RDS(on) = 0.047 Ω @ VGS = -4.5 V RDS(on) = 0.070 Ω @ VGS = -2.5 V • Fast switching speed. • High density cell design for extremely low RDS(on). • High power and current handling capability. Applications • • • Load switch DC/DC converter Battery protection D D 5 4 6 3 7 2 8 1 D D SO-8 S S S G Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter FDS8433A Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage V ID Drain Current ±8 -5 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation TJ, Tstg A -50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1 Operating and Storage Junction Temperature Range W -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS8433A FDS8433A 13’’ 12mm 2500 units 2000 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDS8433A/D Symbol Parameter Off Characteristics TA = 25°C unless otherwise noted Test Conditions Min VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C -20 Typ Max Units V BVDSS Drain-Source Breakdown Voltage BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA -1 V On Characteristics mV/°C -25 -1 (Note 2) VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = -4.5 V, ID = -5 A VGS = -4.5 V, ID = -5 A, TJ=125°C VGS = -2.5 V, ID = -4.3 A VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -5 A -0.4 -0.6 mV/°C 4 0.036 0.050 0.047 0.047 0.085 0.070 -25 Ω Ω Ω A 16 S 1130 pF 480 pF 120 pF Dynamic Characteristics VDS = -10 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 8 16 ns 23 37 ns Turn-Off Delay Time 260 360 ns Turn-Off Fall Time 90 125 ns 20 28 nC VDS = -5 V, ID = -5 A, VGS = -5 V, 2.8 nC 3.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) -0.8 -2.1 A -1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 c) 125° C/W on a minimum mounting pad of 2 oz. copper. FDS8433A DMOS Electrical Characteristics FDS8433A Typical Characteristics 2 VGS = -4.5V -3.5V 40 30 R DS(on) , NORMALIZ ED -3.0V -2.5V 20 -2.0V 10 -1.5V DRAIN-SOURCE ON-RESISTANCE - I D , DRAIN-SOURCE CURRENT (A) 50 1.8 VGS = -2 .0 V 1.6 -2 .5 V 1.4 -3 .0 V 1 0.8 0 0 1 2 3 4 -3 .5 V -4 .0 V -4 .5 V 1.2 5 0 10 20 Figure 1. On-Region Characteristics. 1.4 R D S(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 0.15 ID = -5A VGS = -4.5V 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 ID = -2.5A 0.12 0.09 0.03 0 150 TJ = 1 25° C 0.06 25° C 1 2 - IS , REVERSE DRAIN CURRENT (A) 25°C 1 25° C 6 4 2 0.8 1.2 5 10 TJ = -55° C 8 4 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V 3 -VGS , GATE TO SOURCE VOLT AG E (V) Figure 3. On-Resistance Variation with Temperature. - ID , DRAIN CURRENT (A) 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0 0.4 30 - I D , DRAIN CURRENT (A) -VDS , DRAIN-SOURCE VOLTAGE (V) 1.6 2 VGS= 0V 3 1 TJ =1 25°C 0.01 0.001 0 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 25°C -55°C 0.1 0.2 0.4 0.6 0.8 1 -VS D , BODY DIODE F ORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.2 (continued) 3000 5 -VGS , GATE-SOURCE VOLTAGE (V) I D =-5.0A 2000 VDS = -5V 4 Ciss 1000 CAPACITANCE (pF) -10V -15V 3 2 200 Crss 100 0 4 8 12 Q g , GATE CHARGE (nC) 16 f = 1 MHz V GS = 0 V 50 0.1 20 Figure 7. Gate-Charge Characteristics. 0.2 0.5 1 2 5 -V DS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 8. Capacitance Characteristics. 100 50 100 IT LIM N) S(O RD 10 1m s V GS = -4.5V SINGLE PULSE R θJA = 125°C/W T A = 25°C 0.1 0.01 0.1 0.2 40 10m s 10 0m s 1s 10s DC 1 SINGLE PULSE R θJA=125°C/W TA = 25°C us POWER (W) -ID, DRAIN CURRENT (A) Coss 500 1 0 FDS8433A Typical Characteristics 30 20 10 0.5 1 2 5 10 -VDS , DRAIN-SOURCE VOLTAGE (V) 20 0 0.001 50 Figure 9. Maximum Safe Operating Area. 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) 100 Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 0.2 R θJA (t) = r(t) * R θJA RθJA =125°C/W 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse 0.005 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 100 300 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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