FFH75H60S

Hyperfast Diode 75 A, 600 V FFH75H60S Description The FFH75H60S is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. www.onsemi.com Features • • • • • Hyperfast Recovery trr = 75 ns (@ IF = 75 A) Max Forward Voltage, VF = 1.8 V (@ TC = 25°C) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb−Free and is RoHS Compliant 1 1. Cathode 2. Anode 2 TO−247−2LD CASE 340CL Applications • • • • General Purpose SMPS, Solar Inverter, UPC Power Switching Circuits Solar Inverter, UPC 1 2 2. Anode 1. Cathode ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Ratings Unit Peak Repetitive Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current (TC = 105°C) IF(AV) 75 A Non−repetitive Peak Surge Current 60 Hz Single Half−Sine Wave IFSM 750 A TJ, TSTG −65 to 175 °C DC Blocking Voltage Operating Junction and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM $Y&Z&3&K FFH 75H60S $Y &Z &3 &K FFH75H60S = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 March, 2020 − Rev. 3 1 Publication Order Number: FFH75H60S/D FFH75H60S THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Max Unit RqJC 0.4 °C/W Maximum Thermal Resistance, Junction to Case PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Reel Size Tape Width Quantity FFH75H60S FFH75H60S TO−247−2LD Tube N/A N/A 30 ELECTRICAL Characteristics (TC = 25°C unless otherwise specified) Conditions Parameter VF (Note 1) Min Typ Max Unit IF = 75 A TC = 25°C − 1.8 2.2 V IF = 75 A TC = 125°C − 1.6 2.0 V VR = 600 V TC = 25°C − − 100 mA VR = 600 V TC = 125°C − − 1.0 mA IF = 75 A, dIF/dt = 200 A/ms, VR = 390 V TC = 25°C − 40 75 ns TC = 125°C − 85 − ns TC = 25°C − 23 − ns tb TC = 25°C − 17 − ns Qrr TC = 25°C 80 − nC − − mJ IR (Note 1) trr ta IF = 75 A, dIF/dt = 200 A/ms, VR = 390 V WAVL Avalanche Energy (L = 40 mH) 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 ms, Duty Cycle = 2% TEST CIRCUITS AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 Control IF L DUT CURRENT SENSE RG VGE IGBT t1 IF dIF dt ta 0 + VDD − trr tb 0.25 IRM IRM t2 trr Test Circuit trr Waveforms and Definitions Figure 1. Diode Reverse Recovery Test Circuit & Waveform I=1A L = 40 mH R < 0.1 W EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL) VAVL L R CURRENT SENSE + VDD DUT VDD − IL IL I V Q1 t0 Avalanche Energy Test Circuit t1 t2 t Avalanche Current and Voltage Waveforms Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2 FFH75H60S TYPICAL PERFORMANCE CHARACTERISTICS 100 IR, Reverse Current (mA) IF, Forward Current (A) 400 100 TC = 125°C TC = 75°C 10 TC = 25°C 1 0 TC = 125°C 10 1 TC = 75°C 0.1 TC = 25°C 1 0.01 10 3 2 150 VF, Forward Voltage (V) Figure 4. Typical Reverse Current vs. Reverse Voltage 120 800 Reverse Recovery Time, trr (ns) Typical Capacitance at 0 V = 681 pF 600 400 200 0 0.1 10 1 IF = 75 A TC = 125°C 90 TC = 75°C 60 TC = 25°C 30 0 100 100 200 300 di/dt (A/ms) VR, Reverse Voltage (V) 200 IF(AV), Average Forward Current, (A) 20 Irr, Reverse Recovery Current (A) 500 400 Figure 6. Typical Reverse Recovery Time vs. di/dt Figure 5. Typical Junction Capacitance TC = 125°C 15 TC = 75°C 10 TC = 25°C 5 0 100 600 450 VR, Reverse Voltage (V) Figure 3. Typical Forward Voltage Drop vs. Forward Current Cj, Capacitance (pF) 300 IF = 75 A 200 300 400 500 di/dt (A/ms) 175 150 125 100 75 50 25 0 25 50 75 100 125 150 175 TC, Case Temperature (°C) Figure 8. Forward Current Derating Curve Figure 7. Typical Reverse Recovery Current vs. di/dt www.onsemi.com 3 FFH75H60S TYPICAL PERFORMANCE CHARACTERISTICS (continued) Thermal Response (ZqJC) 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 10−5 10−4 PDM t1 t2 *Notes: 1. ZqJC(t) = 0.4°C/W Max. 2. Duty Factor, D = t1/t2 3. TJM − TC = PDM * ZqJC(t) 10−2 10−3 10−1 Rectangular Pulse Duration (sec) Figure 9. Transient Thermal Response Curve www.onsemi.com 4 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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