FFPF20UA60DN

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FFPF20UA60DN 20 A, 600 V, Ultrafast II Dual Diode Features Description • Ultrafast Recovery trr = 120 ns (@ IF = 10 A) The FFPF20UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applications as welder and UPS application. • Max Forward Voltage, VF = 2.3 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Boost Diode in PFC and SMPS 1 3 2 1. Anode 2. Cathode 3. Anode TO-220F 1 2 3 Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage Parameter VR IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Operating and Storage Temperature Range Rating 600 Unit V VRWM Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 10 A 50 A @ TC = 25oC o -65 to +175 C Thermal Characteristics TC = 25oC unless otherwise noted Symbol RθJC Parameter Max. Maximum Thermal Resistance, Junction to Case Unit o 6.3 C/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF20UA60DN FFPF20UA60DN TO-220F Tube N/A N/A 50 ©2017 Semiconductor Components Industries, LLC FFPF20UA60DN • Rev. 2 1 www.fairchildsemi.com www.onsemi.com FFPF20UA60DN — Ultrafast II Dual Diode February 2018 Symbol Parameter TC = 25oC TC = 125oC VFM1 IF = 10 A IF = 10 A IRM1 VR = 600 V VR = 600 V TC = 25oC TC = 125oC Min. Typ. Max. Unit - 1.8 1.7 2.3 2.2 V - - 100 500 μA trr Irr Qrr IF = 10 A, diF/dt = 200 A/μs TC = 25oC 74 6 213 120 10 600 ns A nC trr Irr Qrr IF = 10 A, diF/dt = 200 A/μs TC = 125oC 120 8.8 530 200 15 1500 ns A nC WAVL Avalanche Energy ( L = 40 mH) - - mJ 10 Notes: 1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform ©2017 Semiconductor Components Industries, LLC FFPF20UA60DN • Rev. 2 2 www.fairchildsemi.com www.onsemi.com FFPF20UA60DN — Ultrafast II Dual Diode Electrical Characteristics TC = 25oC unless otherwise noted Figure 3. Typical Forward Voltage Drop vs. Forward Current Figure 4. Typical Reverse Current vs. Reverse Voltage 10000 100 Reverse Current , IR [μA] Forward Current, IF [A] 1000 10 o TC = 125 C o TC = 75 C 1 o TC = 25 C 0.1 0.5 1.0 1.5 2.0 2.5 Forward Voltage, VF [V] 100 o 10 TC = 75 C 1 o TC = 25 C 0.1 0.01 100 3.0 Figure 5. Typical Junction Capacitance 200 300 400 500 Reverse Voltage, VR [V] 600 Figure 6. Typical Reverse Recovery Time vs. diF/dt 150 40 Reverse Recovery Time, trr [ns] Typical Capacitance at 0V = 36pF Capacitances , Cj [pF] o TC = 125 C 30 20 10 0 0.1 1 10 Reverse Voltage, VR [V] IF = 10A 120 o TC = 125 C 90 o TC = 75 C 60 o TC = 25 C 30 0 100 100 Figure 7. Typical Reverse Recovery Current vs. diF/dt 200 300 diF/dt [A/μs] 400 500 Figure 8. Forward Current Derating Curve Reverse Recovery Current, Irr [A] 12 o TC = 125 C 9 o TC = 75 C 6 o TC = 25 C 3 IF = 10A 0 100 200 diF/dt [A/μs] 300 ©2017 Semiconductor Components Industries, LLC FFPF20UA60DN • Rev. 2 400 3 www.fairchildsemi.com www.onsemi.com FFPF20UA60DN — Ultrafast II Dual Diode Typical Performance Characteristics FFPF20UA60DN — Ultrafast II Dual Diode Package Dimensions ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON ©2017 Semiconductor Components Industries, LLC FFPF20UA60DN • Rev. 2 4 www.fairchildsemi.com www.onsemi.com