FGB3236-F085

DATA SHEET www.onsemi.com EcoSPARK Ignition IGBT 20 mJ, 360 V, N−Channel Ignition IGBT FGB3236-F085, FGI3236-F085 D2PAK−3 CASE 418AJ I2PAK (TO−262 3 LD) CASE 418AV Features • • • • • Industry Standard D2PAK Package SCIS Energy = 330 mJ at TJ = 25°C Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable RoHS Compliant MARKING DIAGRAM 1 Gate 3 Emitter Applications A Y WW XXXX G • Automotive Ignition Coil Driver Circuits • Coil On Plug Applications MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Units BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 360 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 Self Clamping Inductive Switching Energy (ISCIS = 14.7 A, L = 3.0 mHy, TJ = 25°C) 320 mJ ESCIS150 Self Clamping Inductive Switching Energy (ISCIS = 10.4 A, L = 3.0 mHy, TJ = 150°C) 160 mJ IC25 Collector Current Continuous at VGE = 4.0 V, TC = 25°C 44 A IC110 Collector Current Continuous at VGE = 4.0 V, TC = 110°C 27 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total, at TC = 25°C 187 W Power Dissipation Derating, for TC > 25°C 1.25 W/°C Operating Junction Temperature Range −40 to +175 °C TSTG Storage Junction Temperature Range −40 to +175 °C TL Max. Lead Temperature for Soldering (Leads at 1.6 mm from case for 10 s) 300 °C TPKG Max. Lead Temperature for Soldering (Package Body for 10 s) 260 °C ESD Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV TJ AYWW XXX XXXXXG 2 Collector Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 Collector = Assembly Location = Year = Work Week = Device Code = Pb−Free Package Collector (Flange) $Y&Z&3&K FGI 3236 Gate $Y &Z &3 &K FGI3236 Emitter = onsemi Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code SYMBOL COLLECTOR GATE R1 R2 EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2008 July, 2022 − Rev. 2 1 Publication Order Number: FGB3236−F085/D FGB3236−F085, FGI3236−F085 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units OFF STATE CHARACTERISTICS BVCER Collector to Emitter Breakdown Voltage ICE = 2 mA, VGE = 0 V, RGE = 1 kW, see Figure 15 TJ = −40 to 150°C 330 363 390 V BVCES Collector to Emitter Breakdown Voltage ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = −40 to 150°C 350 378 410 V BVECS Emitter to Collector Breakdown Voltage ICE = −75 mA, VGE = 0 V, TJ = 25°C 30 − − V BVGES Gate to Emitter Breakdown Voltage IGES = ±2 mA ±12 ±14 − V ICES Collector to Emitter Leakage Current VCES = 250 V, see Figure 11 TJ = 25°C − − 25 mA TJ = 150°C − − 1 mA IECS Emitter to Collector Leakage Current VEC = 24 V, see Figure 11 TJ = 25°C − − 1 mA TJ = 150°C − − 40 − 120 − W 10K − 30K W R1 Series Gate Resistance R2 Gate to Emitter Resistance ON STATE CHARACTERISTICS VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6 A, VGE = 4 V, TC = 25°C, see Figure 3 − 1.14 1.4 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10 A, VGE = 4.5 V, TC = 150°C, see Figure 4 − 1.32 1.7 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15 A, VGE = 4.5 V, TC = 150°C − 1.61 2.05 V Collector to Emitter On State Current VGE = 5 V, VCE = 5 V 50 − − A − 20 − nC TC = 25°C 1.3 1.6 2.2 V TC = 150°C 0.75 1.1 1.8 VCE = 12 V, ICE = 10 A − 2.6 − V VCE = 14 V, RL = 1 W, VGE = 5 V, RG = 1 kW, TJ = 25°C, see Figure 12 − 0.65 4 ms − 1.7 7 VCE = 300 V, L = 500 mHy, VGE = 5 V, RG = 1 kW, TJ = 25°C, see Figure 12 − 5.4 15 − 1.64 15 TJ = 25°C, L = 3.0 mHy, ICE = 14.7 A, VGE = 5 V, RG = 1 kW, see Figures 1 & 2 − − 320 mJ All Packages − − 0.8 °C/W ICE(ON) DYNAMIC CHARACTERISTICS QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V, see Figure 14 VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA, VCE = VGE, see Figure 10 VGEP Gate to Emitter Plateau Voltage SWITCHING CHARACTERISTICS td(ON)R trR td(OFF)L tfL SCIS Current Turn−On Delay Time−Resistive Current Rise Time−Resistive Current Turn−Off Delay Time−Inductive Current Fall Time−Inductive Self Clamped Inductive Switching THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 FGB3236−F085, FGI3236−F085 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Package Shipping† FGB3236−F085 FGB3236 D2PAK (Pb−Free) 800 units / Tape & Reel FGB3236−F085C FGB3236 D2PAK (Pb−Free) 800 units / Tape & Reel FGI3236−F085 FGI3236 I2PAK (TO−262 3 LD) (Pb−Free) 400 units / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 FGB3236−F085, FGI3236−F085 35 ISCIS , INDUCTIVE SWITCHING CURRENT (A) ISCIS , INDUCTIVE SWITCHING CURRENT (A) TYPICAL PERFORMANCE CHARACTERISTICS RG = 1K W , V GE = 5V 30 25 20 o T J = 25 C 15 o T J = 150 C 10 5 0 SCIS Curves valid for V clamp 0 20 40 60 Voltages of