FGB40T65SPD-F085

IGBT - Field Stop, Trench 650 V, 40 A FGB40T65SPD-F085 General Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. www.onsemi.com C Features • • • • • • • • • • Low Saturation Voltage: VCE(sat) = 2.0 V (Typ.) @ IC = 40 A 100% of the Parts are Dynamically Tested * Short Circuit Ruggedness > 5 ms @ 25°C Maximum Junction Temperature : TJ = 175°C Fast Switching Tight Parameter Distribution Positive Temperature Coefficient for Easy Parallel Operation Copacked with Soft, Fast Recovery Diode AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and are RoHS Compliant G E COLLECTOR (FLANGE) GCE D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ * VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 W, Inductive Load MARKING DIAGRAM Applications • • • • • Onboard Charger AirCon Compressor PTC Heater Motor Drivers Other Automotive Power−train and Auxiliary Applications ON ZXYYKK FGB40T65 SPD FGB40T65SPD Z XYY KK = Specific Device Code = Assembly Plant Code = 3−Digit Data Code = 2−Digits Lot Run Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2016 April, 2021 − Rev. 3 1 Publication Order Number: FGB40T65SPD−F085/D FGB40T65SPD−F085 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VCES Collector to Emitter Voltage 650 V VGES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V IC ICM IF Description Collector Current @ TC = 25°C 80 A Collector Current @ TC = 100°C 40 A (Note 1) 120 A Diode Forward Current Pulsed Collector Current @ TC = 25°C 40 A Diode Forward Current @ TC = 100°C 20 A (Note 1) 120 A IFM Pulsed Diode Maximum Forward Current PD Maximum Power Dissipation @ TC = 25°C 267 W Maximum Power Dissipation @ TC = 100°C 134 W Short Circuit Withstand Time @ TC = 25°C SCWT 5 ms TJ Operating Junction Temperature −55 to +175 °C Tstg Storage Temperature Range −55 to +175 °C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by max. junction temperature ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 − − V DBV CES Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 mA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA 4.0 5.8 7.5 V DT J ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 40 mA, VCE = VGE VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V − 2.0 2.4 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.9 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 1520 − pF DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance − 92 − pF Cres Reverse Transfer Capacitance − 15 − pF − 18 − ns − 26 − ns SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Turn−On Delay Time Rise Time VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 25°C Turn−Off Delay Time − 35 − ns Fall Time − 10 − ns Eon Turn−On Switching Loss − 0.97 − mJ Eoff Turn−Off Switching Loss − 0.28 − mJ Ets Total Switching Loss − 1.25 − mJ Tf www.onsemi.com 2 FGB40T65SPD−F085 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Condition Min Typ Max Unit − 14 − ns − 35 − ns Turn−Off Delay Time − 38 − ns Fall Time − 13 − ns Eon Turn−On Switching Loss − 1.61 − mJ Eoff Turn−Off Switching Loss − 0.47 − mJ Ets Total Switching Loss − 2.08 − mJ TSC Short Circuit Withstand Time VCC = 400 V, VGE = 15 V, RG = 10 W 5 − − ms Qg Total Gate Charge VCE = 400 V, IC = 40 A, VGE = 15 V − 36 − nC Qge Gate to Emitter Charge − 12 − nC Qgc Gate to Collector Charge − 11 − nC SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Turn−On Delay Time VCC = 400 V, IC = 40 A, RG = 6 W, VGE = 15 V, Inductive Load, TC = 175°C Rise Time Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Erec Trr Qrr Parameter Test Condition Diode Forward Voltage IF = 20 A IF = 20 A, dIF/dt = 200 A/ms Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge Min Typ Max Unit TC = 25°C − 2.0 2.7 V TC = 175°C − 1.8 − TC = 175°C − 51 − mJ TC = 25°C − 34 − ns TC = 175°C − 206 − TC = 25°C − 56 − TC = 175°C − 731 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. THERMAL CHARACTERISTICS Symbol Parameter Typ Max Unit RqJC(IGBT) Thermal Resistance, Junction to Case − 0.56 °C/W RqJC(Diode) Thermal Resistance, Junction to Case − 1.71 °C/W Thermal Resistance, Junction to Ambient − 40 °C/W RqJA www.onsemi.com 3 FGB40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Output Characteristics Figure 4. Transfer Characteristic Figure 5. Typical Saturation Voltage Figure 6. Saturation Voltage vs. VGE Characteristics www.onsemi.com 4 FGB40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics Figure 11. SOA Characteristics Figure 12. Turn Off Switching SOA Characteristics www.onsemi.com 5 FGB40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 15. Turn−on Characteristics vs. Collector Current Figure 16. Turn−off Characteristics vs. Collector Current m Figure 14. Turn−off Characteristics vs. Gate Resistance m Figure 13. Turn−on Characteristics vs. Gate Resistance Figure 17. Switching Loss vs. Gate Resistance Figure 18. Switching Loss vs. Collector Current www.onsemi.com 6 FGB40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure 19. Forward Characteristics Figure 20. Reverse Current Figure 21. Stored Charge Figure 22. Reverse Recovery Time Figure 23. Saturation Voltage vs. Case Temperature at Variant Current Level www.onsemi.com 7 FGB40T65SPD−F085 TYPICAL PERFORMANCE CHARACTERISTICS (continued) PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t 2 PEAK TJ = P DM x Z qJA x R qJA + T C Figure 24. Transient Thermal Impedance of IGBT PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t 2 PEAK TJ = P DM x Z qJA x R qJA + T C Figure 25. Transient Thermal Impedance of Diode PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping† FGB40T65SPD FGB40T65SPD−F085 D2PAK−3 (TO−263, 3−LEAD) (Pb−Free) − − 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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