FJV1845FMTF

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FJV1845 FJV1845 Amplifier Transistor • Complement to FJV992 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 120 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 120 5 V V IC Collector Current 50 mA IB Base Current 10 mA PC Collector Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=120V, IE=0 Min. Typ. Max. 50 Units nA 50 nA IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE1 hFE2 DC Current Gain VCE=6V, IC=0.1mA VCE=6V, IC=1mA 150 200 580 600 1200 VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.55 0.59 0.65 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.07 0.3 fT Current Gain Bandwidth Product VCE=6V, IC=1mA Cob Output Capacitance VCB=30V, IE=0, f=1MHz 50 V V 110 1.6 MHz 2.5 pF hFE2 Classification Classification P F E U hFE2 200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200 Marking 6E hFE Classification ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 FJV1845 Typical Characteristics 10 1.0 IB=16µA IB=1.4µA IB=1.2µA IB=1.0µA IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT IB=14µA 8 0.8 IB=12µA IB=10µA 6 IB=8µA IB=6µA 4 IB=0.6µA IB=0.4µA 0.4 IB=4µA 2 IB=0.8µA 0.6 IB=0.2µA 0.2 IB=2µA 0 0.0 0 1 2 3 4 5 0 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic hFE, DC CURRENT GAIN 700 600 500 400 300 200 100 0.1 1 10 100 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 6V Pule Test 800 0 0.01 60 80 100 100 IC=10IB Pulse Test 10 VBE(sat) 1 0.1 0.01 0.1 VCE(sat) 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10k f=1MHz IE=0 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 10 Cob[pF], CAPACITANCE 40 Figure 2. Static Characteristic 1000 900 20 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE=6V 1k 100 10 0.1 1 10 100 IE[mA], EMITTER CURRENT Figure 6. Current Gain Bandwidth Product Rev. B1, August 2002 FJV1845 Typical Characteristics (Continued) 500 VCE = 6V Pulse Test PC[mW], POWER DISSIPATION IC[mA], COLLECTOR CURRENT 100 10 1 0.1 0.01 0.4 0.5 0.6 0.7 0.8 0.9 VBE[V], BASE-EMITTER VOLTAGE Figure 7. Collector Current vs. Base-Emitter Voltage ©2002 Fairchild Semiconductor Corporation 400 300 200 100 0 0 25 50 75 100 125 150 175 o Ta[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B1, August 2002 FJV1845 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. 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