FMB3906

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Block Diagram E2 E2 C2 B2 B1 C1 E1 B2 C1 C2 SC70-6 Mark: .2A .1A 1A E1 pin #1 B1 Figure 1. FFB3906 Device Package Figure 2. FFB3906 Internal Connections C2 E1 C2 B2 E1 E2 C1 B1 C1 B2 E2 pin #1 B1 SuperSOT™-6 Mark: .2A Dot denotes pin #1 Figure 3. FMB3906 Device Package E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Figure 4. FMB3906 Internal Connections B4 C2 C1 C3 C2 B2 E2 B2 E3 B3 E4 B4 C1 C1 C2 C2 C3 C3 C4 C4 C4 C4 C3 Mark: MMPQ3906 Figure 5. MMPQ3906 Device Package Figure 6. MMPQ3906 Internal Connections © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 E1 www.fairchildsemi.com 1 FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier December 2013 Part Number Top Mark Package Packing Method FFB3906 .2A SC70 6L Tape and Reel FMB3906 .2A SSOT 6L Tape and Reel MMPQ3906 MMPQ3906 SOIC 16L Tape and Reel Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5 V -200 mA -55 to +150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Note: 1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics(2) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Max. Parameter Unit FFB3906 FMB3906 MMPQ3906 Total Device Dissipation 300 700 1,000 mW Derate Above 25°C 2.4 5.6 8.0 mW/°C Thermal Resistance, Junction to Ambient 415 180 °C/W Thermal Resistance, Junction to Ambient, Effective 4 Die 125 °C/W Thermal Resistance, Junction to Ambient, Each Die 240 °C/W Note: 2. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 www.fairchildsemi.com 2 FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Ordering Information Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(3) IC = -1.0 mA, IB = 0 -40 V V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Base Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA Collector Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA V(BR)EBO IBL ICEX On Characteristics FFB3906, FMB3906 MMPQ3906 FFB3906, FMB3906 hFE MMPQ3906 DC Current Gain(3) FFB3906, FMB3906 MMPQ3906 IC = -0.1 mA, VCE = -1.0 V IC = -1.0 mA, VCE = -1.0 V IC = 10 mA, VCE = -1.0 V 60 40 80 60 100 75 All Devices IC = -50 mA, VCE = -1.0 V 60 All Devices IC = -100 mA, VCE = -1.0 V 30 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 300 IC = -10 mA, IB = -1.0 mA -0.25 IC = -50 mA, IB = -5.0 mA -0.40 IC = -10 mA, IB = -1.0 mA -0.65 -0.85 IC = -50 mA, IB = -5.0 mA -0.95 V V Small-Signal Characteristics (MMPQ3906 Only) Current Gain-Bandwidth Product IC = -10 mA, VCE = -20 V, f = 100 MHz 200 MHz Cob Output Capacitance VCB = -5.0 V, IE = 0, f = 140 kHz 4.5 pF Cib Input Capacitance VEB = -0.5 V, IC = 0, f = 140 kHz 10 pF fT Note: 3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 www.fairchildsemi.com 3 FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Electrical Characteristics V CESAT - COLLECTOR EMITTER VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN 250 V CE = 1 .0V 150 100 - 40 °C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 125°C 0 VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 200 Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current β = 10 - 40 °C 1 0.8 0.8 25 °C 125 °C 0.6 - 40 °C 25 °C 0.6 125 °C 0.4 0.4 V CE = 1V 0.2 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 Figure 9. Base-Emitter Saturation Voltage vs. Collector Current 100 1 10 I C - COLLECTOR CURRENT (mA) 25 10 V CB = 25V C ob 10 1 0.1 0.01 25 0 0.1 Figure 10. Base-Emitter On Voltage vs. Collector Current CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 25 °C 0.05 Figure 7. Typical Pulsed Current Gain vs. Collector Current 1 0.2 0.15 25 °C 50 0.1 β = 10 0.25 125 °C 200 0.3 8 6 4 2 0 0.1 50 75 100 TA - AMBIE NT TEMP ERATURE (° C) 125 Figure 11. Collector Cut-Off Current vs. Ambient Temperature 1 REVERSE BIAS VOLTAGE (V) 10 Figure 12. Common-Base Open Circuit Input and Output Capacitance vs. Reverse Bias Voltage © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 C ib www.fairchildsemi.com 4 FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Typical Performance Characteristics 12 6 V CE = 5.0V f = 1.0 kHz 5 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 4 3 I C = 100 μA, R S = 200Ω 2 I C = 1.0 mA, R S = 200Ω 1 10 6 4 I C = 100 μA 2 I C = 100 μA, R S = 2.0 kΩ 0 0.1 1 10 f - FREQUENCY (kHz) 0 0.1 100 Figure 13. Noise Figure vs. Frequency 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 Figure 14. Noise Figure vs. Source Resistance 500 500 ts tf 10 I B1 = I B2 = Ic t off 100 TIME (nS) 100 TIME (nS) I C = 1.0 mA 8 tr Ic t on I B1 = 10 t on VBE(OFF) = 0.5V 10 t off I = I = B1 B2 10 Ic 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 1 100 1 I 100 Figure 16. Turn-On and Turn-Off Times vs. Collector Current h re - VOLTAGE FEEDBACK RATIO (x10 _ 4 ) Figure 15. Switching Times vs. Collector Current 10 - COLLECTOR CURRENT (mA) PD - POWER DISSIPATION (W) 1 SOIC-16 SOT-6 0.75 0.5 SC70-6 0.25 0 0 25 50 75 100 TEMPERATURE (º C) 125 150 10 1 0.1 1 I C - COLLE CTOR CURRENT (mA) 10 Figure 18. Voltage Feedback Ratio Figure 17. Power Dissipation vs. Ambient Temperature © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 100 www.fairchildsemi.com 5 FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Typical Performance Characteristics (Continued) h oe - OUTPUT ADMITTANCE (μ mhos) h ie - INPUT IMPEDANCE (k Ω) 10 VCE = 10 V f = 1.0 kHz 1 0.1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Figure 19. Input Impedance 1000 V CE = 10 V f = 1.0 kHz 100 10 0.1 1 I C - COLLECTOR CURRENT ( mA) 10 Figure 20. Output Admittance V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN 1000 200 100 50 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Figure 21. Current Gain © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 www.fairchildsemi.com 6 FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Typical Performance Characteristics (Continued) FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions SC70 6L SYMM C L 2.00±0.20 0.65 A 0.50 MIN 6 4 B PIN ONE 1.25±0.10 1 1.90 3 0.30 0.15 (0.25) 0.40 MIN 0.10 0.65 A B 1.30 LAND PATTERN RECOMMENDATION 1.30 1.00 0.80 SEE DETAIL A 1.10 0.80 0.10 C 0.10 0.00 C 2.10±0.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE (R0.10) 0.25 0.10 0.20 A) THIS PACKAGE CONFORMS TO EIAJ SC-88, 1996. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. D) DRAWING FILENAME: MKT-MAA06AREV6 30° 0° 0.46 0.26 SCALE: 60X Figure 22. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MAA06A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MAA06A.pdf. © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 www.fairchildsemi.com 7 FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions (Continued) SSOT 6L Figure 23. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA06A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA06A.pdf. © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 www.fairchildsemi.com 8 FFB3906 / FMB3906 / MMPQ3906 — PNP Multi-Chip General-Purpose Amplifier Physical Dimensions (Continued) SO 16L NB 10.00 9.80 A 8.89 16 9 B 4.00 3.80 6.00 PIN ONE INDICATOR 1.75 1 5.6 8 0.51 0.35 1.27 (0.30) 0.25 M 1.27 C B A 0.65 LAND PATTERN RECOMMENDATION 1.75 MAX 1.50 1.25 SEE DETAIL A 0.25 0.10 C 0.25 0.19 0.10 C 0.50 0.25 X 45° NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) GAGE PLANE A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AC, ISSUE C. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) CONFORMS TO ASME Y14.5M-1994 E) LANDPATTERN STANDARD: SOIC127P600X175-16AM F) DRAWING FILE NAME: M16AREV12. (R0.10) 0.36 8° 0° SEATING PLANE 0.90 0.50 (1.04) DETAIL A SCALE: 2:1 Figure 24. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/M1/M16A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-M16A.pdf. © 1998 Fairchild Semiconductor Corporation FFB3906 / FMB3906 / MMPQ3906 Rev. 1.1.0 www.fairchildsemi.com 9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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