FMBM5401

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FMBM5401 — PNP General-Purpose Amplifier FMBM5401 PNP General-Purpose Amplifier C2 Description E1 C1 This device has matched dies in SuperSOT-6. B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Ordering Information Part Number Marking Package Packing Method FMBM5401 4S2 SSOT 6L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V -600 mA -55 to +150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Total Power Dissipation 700 mW Thermal Resistance, Junction-to-Ambient, Total 180 °C/W Note: 3. Device mounted on a 1 in 2 pad of 2 oz copper. © 2005 Semiconductor Components Industries, LLC. October-2017,Rev. 2 Publication Order Number: FMBM5401/D Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions (4) Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = -1.0 mA, IB = 0 -150 V BVCBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -160 V BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE1 DIVID1 hFE2 DIVID2 hFE3 DIVID3 DC Current Gain (4) VCB = -120 V, IE = 0 -50 nA VCB = -120 V, IE = 0, TA = 100°C -50 μA VEB = -3.0 V, IC = 0 -50 nA VCE = -5 V, IC = -1 mA 50 Variation Ratio of hFE1 Between Die 1 and Die 2 hFE1(Die1) / hFE1(Die2) 0.9 1.1 DC Current Gain(4) VCE = -5 V, IC = -10 mA 60 240 Variation Ratio of hFE2 Between Die 1 and Die 2 hFE2(Die1) / hFE2(Die2) 0.95 1.05 DC Current Gain(4) VCE = -5 V, IC = -50 mA 50 Variation Ratio of hFE3 Between Die 1 and Die 2 hFE3(Die1) / hFE3(Die2) 0.9 1.1 IC = -10 mA, IB = -1 mA -0.2 IC = -50 mA, IB = -5 mA -0.5 IC = -10 mA, IB = -1 mA -1 IC = -50 mA, IB = -5 mA -1 Base-Emitter On Voltage(4) VCE = -5 V, IC = -10 mA -1 V Difference of VBE(on) Between Die1 and Die 2 VBE(on)(Die1) - VBE(on)(Die2) -8 8 mV Current Gain Bandwidth Product VCE = -10 V, IC = -10 mA, f = 100 MHz 100 300 MHz Cob Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz 6.0 pF NF Noise Figure VCE = -5.0 V, IC = -250 μA, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 8.0 dB VCE(sat) Collector-Emitter Saturation Voltage(4) VBE(sat) Base-Emitter Saturation Voltage(4) VBE(on) DEL fT Note: 4. Pulse test: Pulse width ≤ 300 ms, duty cycle ≤ 2% www.onsemi.com 2 V V FMBM5401 — PNP General-Purpose Amplifier Electrical Characteristics β β = 10 β 0.3 150 o 125 C o 25 C 0.2 100 o 25 C 50 o - 40 C 0 1E-4 o 125 C 0.1 1E-3 0.01 0.1 1 IC - COLLECTOR CURRENT (A) Figure 1. Typical Pulsed Current Gain vs. Collector Current o - 40 C 0.0 0.1 10 100 Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VBESAT - BASE-EMITTER VOLTAGE (V) 1.0 o - 40 C 0.8 o - 40 C 0.8 o 25 C o 25 C 0.6 0.6 o 125 C β o 125 C 0.4 0.4 β 0.2 0.1 1 β = 10 10 100 VCE = 5V 0.2 0.1 1 10 100 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) Figure 4. Base-Emitter On Voltage vs.Collector Current 100 BV CER - BREAKDOWN VOLTAGE (V) Figure 3. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLECTOR CURRENT (nA) 1 IC - COLLECTOR CURRENT (mA) VBC(ON) - BASE-EMITTER ON VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN VCE = 5V VCESAT - COLLECTOR-EMITTER VOLTAGE (V) 0.4 200 Between Emitter-Base 220 V CB = 10 0V 10 210 200 1 190 0.1 180 25 50 75 100 125 T A - AM BIENT TE MPE RATURE (°C) Figure 5. Collector Cut-Off Current vs. Ambient Temperature 150 170 0.1 1 10 RESISTANCEΩ(kΩ ) 100 1000 Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base www.onsemi.com 3 FMBM5401 — PNP General-Purpose Amplifier Typical Performance Characteristics 80 CAPACITANCE (pF) f = 1.0 MHz 60 40 C eb 20 C cb 0 0.1 1 10 100 V R - REVERSE BIAS VOLTAGE(V) Figure 7. Input and Output Capacitance vs. Reverse Voltage www.onsemi.com 4 FMBM5401 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) FMBM5401 — PNP General-Purpose Amplifier Physical Dimensions Figure 8. 6-LEAD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE www.onsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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