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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FPF2G120BF07AS
F2, 3ch Boost module with NTC
General Description
* typical appearance
The FPF2G120BF07AS is the 3ch boost topology which is providing an optimized solution for the multi-string solar application.
And the integrated high speed field stop IGBTs and SiC diodes
are providing lower conduction and switching losses. Furthermore, the screw clamp provides a fast and reliable mounting
method.
Electrical Features
Package Code: F2
• High Efficiency
• Low Conduction and Switching Losses
• High Speed Field Stop IGBT
• SiC SBD for Boost Diode
• Built-in NTC for Temperature Monitoring
Mechanical Features
• Compact Size : F2 Package
• Soldering Pin
• Al2O3 Substrate with Low Thermal Resistance
Applications
• Solar Inverter
Related Materials
• AN-5077: Design Considerations for High Power Module
Internal Circuit Diagram
(HPM)
Package Marking and Ordering Information
Device
Device Marking
Package
PCM
Packing Type
Quantity / Tray
FPF2G120BF07AS
FPF2G120BF07AS
F2
X
Tray
14
FPF2G120BF07ASP
FPF2G120BF07ASP
F2
O
Tray
14
©2015 Fairchild Semiconductor Corporation
FPF2G120BF07AS Rev. 1.1
1
www.fairchildsemi.com
FPF2G120BF07AS - F2, 3ch Boost module with NTC
June 2015
Symbol
TC = 25oC unless otherwise noted.
Description
Condition
Rating
Units
Boost IGBT
VCES
Collector-Emitter Voltage
650
V
VGES
Gate-Emitter Voltage
± 20
V
Transient Gate-Emitter Voltage
IC
Continuous Collector Current
TC = 80 °C, TJmax = 175 °C
limited by TJmax
ICM
Pulsed Collector Current
PD
Maximum Power Dissipation
TJ
Operating Junction Temperature
± 25
V
40
A
80
A
156
W
- 40 to + 150
°C
Protection Diode
VRRM
Peak Repetitive Reverse Voltage
IF
Continuous Forward Current
IFM
Maximum Forward Current
TC = 80 °C, TJmax = 175 °C
60Hz Single Half-Sine Wave
650
V
15
A
30
A
IFSM
Non-repetitive Peak Surge Current
150
A
I2t - value
Surge Current Integral Value
93
A2s
PD
Maximum Power Dissipation
140
W
TJ
Operating Junction Temperature
- 40 to + 150
°C
VRRM
Peak Repetitive Reverse Voltage
650
V
IF
Continuous Forward Current
TC = 80 °C, TJmax = 175 °C
15
A
IFM
Maximum Forward Current
30
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
120
A
I2t - value
Surge Current Integral Value
60
A2s
PD
Maximum Power Dissipation
98
W
TJ
Operating Junction Temperature
- 40 to + 150
°C
Storage Temperature
- 40 to + 125
°C
Boost Diode
Module
TSTG
VISO
Isolation Voltage
Iso._Material
Internal Isolation Material
TMOUNT
Mounting Torque
Creepage
Terminal to Heat Sink
Terminal to Terminal
6.3
mm
Clearance
Terminal to Heat Sink
10.0
mm
Terminal to Terminal
5.0
mm
©2015 Fairchild Semiconductor Corporation
FPF2G120BF07AS Rev. 1.1
AC 1 min.
2
2500
V
Al2O3
-
2.0 to 5.0
N•m
11.5
mm
www.fairchildsemi.com
FPF2G120BF07AS - F2, 3ch Boost module with NTC
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
650
-
-
V
Boost IGBT
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0 V, IC = 1 mA
ICES
Collector Cut-off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
Gate-Emitter Leakage Current
VGE = VGES, VCE = 0 V
-
-
±2
A
On Characteristics
VGE(th)
Gate-Emitter Threshold Voltage
VGE = VCE, IC = 40 mA
3.9
5.1
6.8
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 40 A, VGE = 15 V
-
1.55
2.2
V
IC = 40 A, VGE = 15 V, TC = 125 °C
-
1.85
-
V
RLEAD
Lead Resistance of Pin to Chip
per Chip
-
3.3
-
m
VCC = 300 V
IC = 40 A
VGE = 15 V
RG = 15
Inductive Load
TC = 25 °C
-
24
-
ns
-
24
-
ns
-
132
-
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
VCC = 300 V
IC = 40 A
VGE = 15 V
RG = 15
Inductive Load
TC = 125 °C
tf
Fall Time
EON
Turn-On Switching Loss per Pulse
EOFF
Turn-Off Switching Loss per Pulse
Qg
Total Gate Charge
VCC = 300 V, IC = 40 A, VGE = 15 V
RJC
Thermal Resistance of Junction to Case
-
17
-
ns
-
0.40
-
mJ
-
0.28
-
mJ
-
22
-
ns
-
27
-
ns
-
148
-
ns
-
17
-
ns
-
0.59
-
mJ
-
0.37
-
mJ
-
65
-
nC
per Chip
-
-
0.96
°C/W
IF = 15 A
-
1.05
1.4
V
IF = 15 A, TC = 125 °C
-
0.95
-
V
m
Protection Diode
VF
Diode Forward Voltage
RLEAD
Lead Resistance of Pin to Chip
per Chip
-
2.4
-
IR
Reverse Leakage Current
VR = 650 V
-
-
250
A
RJC
Thermal Resistance of Junction to Case
per Chip
-
-
1.07
°C/W
-
1.45
1.9
V
Boost Diode
VF
Diode Forward Voltage
IF = 15 A
IF = 15 A, TC = 125 °C
-
1.75
-
V
RLEAD
Lead Resistance of Pin to Chip
per Chip
-
2.8
-
m
A
IR
Reverse Leakage Current
VR = 650 V
-
-
60
Irr
Reverse Recovery Current
-
9.2
-
A
QC
Total Capacitive Charge
VR = 300 V, IF = 15 A,
di / dt = 1390 A/us
TC = 25 °C
-
60
-
nC
-
4.9
-
J
-
9.2
-
A
nC
Erec
Reverse Recovery Energy
Irr
Reverse Recovery Current
QC
Total Capacitive Charge
Erec
RJC
-
65
-
Reverse Recovery Energy
VR = 300 V, IF = 15 A,
di / dt = 1390 A/us
TC = 125 °C
-
4.9
-
J
Thermal Resistance of Junction to Case
per Chip
-
-
1.52
°C/W
©2015 Fairchild Semiconductor Corporation
FPF2G120BF07AS Rev. 1.1
3
www.fairchildsemi.com
FPF2G120BF07AS - F2, 3ch Boost module with NTC
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
k
NTC(Thermistor)
RNTC
Rated Resistance
TC = 25 °C
-
10
-
TC = 100 °C
-
936
-
Tolerance
TC = 25 °C
-3
-
+3
%
PD
Power Dissipation
TC = 25 °C
-
-
20
mW
BValue
B-Constant
B25/50
-
3450
-
K
B25/100
-
3513
-
K
©2015 Fairchild Semiconductor Corporation
FPF2G120BF07AS Rev. 1.1
4
www.fairchildsemi.com
FPF2G120BF07AS - F2, 3ch Boost module with NTC
Electrical Characteristics TC = 25°C unless otherwise noted.
Fig 1. Typical Output Characteristics
- IGBT
Fig 2. Typical Output Characteristics
- IGBT
80
VGE = 19 V
17 V
15 V
13 V
11 V
9V
60
Collector Current, IC [A]
Collector Current, IC [A]
80
40
20
TC = 25 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
VGE = 19 V
17 V
15 V
13 V
11 V
9V
60
40
20
TC = 125 °C
0
0.0
3.0
0.5
Collector-Emitter Voltage, VCE [V]
2.5
3.0
2.0
Common Emitter
VGE = 15 V
TC = 25°C
TC = 80°C
TC = 125°C
40
20
0.5
with an inductive load
VCE = 300 V
VGE = 15 V
Rg = 15
TC = 25 °C
TC = 125 °C
1.6
Switching Loss [mJ]
60
0
0.0
1.0
1.5
2.0
2.5
0.8
EOFF
0.4
0.0
3.0
Fig 5. Switching Loss vs. Gate Resistance
- IGBT
EON
1.2
0
10
20
30
40
50
60
70
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
80
Fig 6. Transient Thermal Impedance
- IGBT
10
with an inductive load
VCE = 300 V
VGE = 15 V
IC = 40 A
TC = 25 °C
TC = 125 °C
1.0
0.8
Thermal Response, ZJC [C/W]
1.2
Switching Loss [mJ]
2.0
Fig 4. Switching Loss vs. Collector Current
- IGBT
80
EON
0.6
0.4
EOFF
0.2
0.0
1.5
Collector-Emitter Voltage, VCE [V]
Fig 3. Typical Saturation Voltage Characteristics
- IGBT
Collector Current, IC [A]
1.0
0
10
20
30
40
60
70
Gate Resistance, RG []
©2015 Fairchild Semiconductor Corporation
FPF2G120BF07AS Rev. 1.1
50
80
90
1
0.5
0.3
0.1
0.1
0.05
0.01
t1
Single Pulse
t2
Duty Factor, D = t1/t2
TJ - TC = PDM*ZJC(t)
1E-3
1E-5
100
PDM
0.02
0.01
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration, t1 [sec]
5
www.fairchildsemi.com
FPF2G120BF07AS - F2, 3ch Boost module with NTC
Typical Performance Characteristics
Fig 7. Typical Forward Voltage Drop
- Protection Diode
Fig 8. Transient Thermal Impedance
- Protection Diode
30
10
Forward Current, IF [A]
25
Thermal Response, ZJC(t) [C/W]
TC = 25°C
TC = 80°C
TC = 125°C
20
15
10
5
0
0.0
0.3
0.6
0.9
Forward Voltage, VF [V]
1.2
0.5
0.3
0.1 0.1
0.05
0.02
0.01
PDM
t1
0.01 Single Pulse
t2
Duty Factor, D = t1/t2
TJ - TC = PDM*ZJC(t)
1E-3
1E-5
1.5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration, t1 [sec]
Fig 9. Typical Forward Voltage Drop
- Boost Diode
Fig 10. Reverse Recovery Energy vs. Forward Current
- Boost Diode
30
8
Reverse Recovery Energy, Erec [uJ]
TC = 25°C
TC = 80°C
TC = 125°C
25
Forward Current, IF [A]
1
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
Forward Voltage, VF [V]
2.5
Rg = 15
VR = 300V
TC = 125°C
6
4
2
0
3.0
0
5
10
15
20
25
Forward Current, IF [V]
30
Fig 11. Reverse Recovery Energy vs. Gate Resistance Fig 12. Transient Thermal Impedance
- Boost Diode
- Boost Diode
10
IF = 15 A
VR = 300V
TC = 125°C
Thermal Response, ZJC(t) [C/W]
Reverse Recovery Energy, Erec [uJ]
8
6
4
2
0
0
20
40
Gate Resistance, RG []
©2015 Fairchild Semiconductor Corporation
FPF2G120BF07AS Rev. 1.1
60
80
1
0.5
0.3
0.1
0.1 0.05
0.02
0.01
t1
0.01 Single Pulse
t2
Duty Factor, D = t1/t2
TJ - TC = PDM*ZJC(t)
1E-3
1E-5
100
PDM
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration, t1 [sec]
6
www.fairchildsemi.com
FPF2G120BF07AS - F2, 3ch Boost module with NTC
Typical Performance Characteristic
FPF2G120BF07AS - F2, 3ch Boost module with NTC
Internal Circuit Diagram
DC+1
DC+2
D1
DC+3
D2
L1
D3
L2
T1
L3
T2
Q1
Q2
Q3
G1
G2
G3
E1
E2
E3
DC-1
DC-2
DC-3
Package Outlines [mm]
0.64±0.03
62.8 ±0.5
48.0 ±0.3
53.0 ±0.1
4.5 ±0.1
42.5 ±0.15
5.0 ±0.1
1.4±0.2
2.3 X 8.5
SIDE VIEW
16.4±0.2
22.7 ±0.3
25.5
25.5
24.0
51.0 ±0.15
24.0
56.7±0.3
20.8
TOP VIEW
17.6
14.4
14.4
11.2
8.0
16.4±0.5
8.0
4.8
4.8
E1
G1
9.6
12.8
16.0
DC-1
DC DC
+1 +1
DC DC
-1 -1
DC DC
+2 +2
DC DC
-2 -2
3.2
L1 L1
L2 L2
L3 L3
DC DC
+3 +3
DC DC
-3 -3
26.5
21.3
12.8
16.0
E2
G2
T1
DC-1
T2
E3
G3
DC DC
-2 -2
D C DC
-3 -3
26.5
21.3
FRONT VIEW
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE DOES NOT COMPLY
TO ANY CURRENT PACKAGING STANDARD
B) ALL DIMENSIONS ARE IN MILLIMETERS
C) 3CH-BOOST MODULE TYPE
D) DRAWING FILENAME : 20BF07ASREV3
4x 2.8
2x 9.0
PCB HOLE POSITION
- PIN-GRID 3.2mm
- TOLERANCE OF PCB HOLE PATTERN
©2015 Fairchild Semiconductor Corporation
FPF2G120BF07AS Rev. 1.1
12.0±0.35
1.6
0.1
7
www.fairchildsemi.com
FPF2G120BF07AS - F2, 3ch Boost module with NTC
©2015 Fairchild Semiconductor Corporation
FPF2G120BF07AS Rev. 1.1
8
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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