FQB10N50CFTM-WS

N-Channel QFET® FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low gate charge ( Typ. 45 nC) • Low Crss ( Typ. 17.5 pF) • 100% avalanche tested • Fast recovery body diode D D G S G D2-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy FQB10N50CFTM-WS 500 Unit V ±30 V 10 A 6.35 (Note 1) 40 A (Note 2) 825 mJ IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 14.3 mJ dv/dt Peak Diode Recovery dv/dt 2.0 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC 143 W 1.14 W/oC -55 to +150 oC 300 oC FQB10N50CFTM-WS Unit Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max 0.87 Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. ©2010 Semiconductor Components Industries, LLC September-2017, Rev. 3 62.5 oC/W 40 Publication Order Number: FQB10N50CFTM-WS FQB10N50CF — N-Channel QFET® FRFET® MOSFET FQB10N50CF Device Marking FQB10N50CF Device FQB10N50CFTM-WS Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V ID = 250A, Referenced to 25 C - 0.5 - V/oC VDS = 500V , VGS = 0V Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC o - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 5A - 0.51 0.61  gFS Forward Transconductance VDS = 20V, ID = 5A - 105 - S VDS = 25V, VGS = 0V f = 1MHz - 1660 2210 pF - 182 240 pF - 17.5 26 pF - 45 60 nC - 8 - nC - 19 - nC ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400V, ID = 10A VGS = 10V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 10A RG = 25 (Note 4) - 25 60 - 47 105 ns - 138 285 ns - 55 120 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 40 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 10A - - 1.4 V trr Reverse Recovery Time 91 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 10A dIF/dt = 100A/s - 220 - nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 16.5mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25°C 3: ISD 10A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics www.onsemi.com 2 FQB10N50CF — N-Channel QFET® FRFET® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 2. Transfer Characteristics 50 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 10 ID,Drain Current[A] ID,Drain Current[A] Figure 1. On-Region Characteristics 30 10 o 150 C o -55 C o 25 C 1 *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 2. TC = 25 C 0.1 10 VDS,Drain-Source Voltage[V] 30 2 3 4 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.2 100 1.0 0.8 VGS = 10V 0.6 VGS = 20V 0.4 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o 0.2 *Note: TJ = 25 C 0 5 10 15 20 ID, Drain Current [A] 25 0.1 0.0 30 Figure 5. Capacitance Characteristics 3000 Ciss 2500 2000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss 500 0 0.1 1 10 VDS, Drain-Source Voltage [V] 1.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1500 1000 2. 250s Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 30 VGS, Gate-Source Voltage [V] 3500 Capacitances [pF] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 1 0.8 1 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 0 www.onsemi.com 3 *Note: ID = 10A 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 FQB10N50CF — N-Channel QFET® FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 -100 -50 0 50 100 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 5A 0.5 0.0 -100 150 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 12 100 50s 10 ID, Drain Current [A] 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC *Notes: 0.1 o 1. TC = 25 C 1 10 100 VDS, Drain-Source Voltage [V] 6 4 0 25 600 50 75 100 125 o TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 1 0.5 JC 0.01 8 2 o 2. TJ = 150 C 3. Single Pulse o ZThermal Response JC(t), Thermal Response [Z [ C/W] ] ID, Drain Current [A] 100s 10 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 0.01 Single pulse 1E-3 -5 10 t2 *Notes: o 1. ZJC(t) = 0.87 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration t , Square Wave Pulse Duration[sec] [sec] 1 www.onsemi.com 4 0 10 1 10 150 FQB10N50CF — N-Channel QFET® FRFET® MOSFET Typical Performance Characteristics (Continued) FQB10N50CF — N-Channel QFET® FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp www.onsemi.com 5 Time DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FQB10N50CF — N-Channel QFET® FRFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms FQB10N50CF — N-Channel QFET® FRFET® MOSFET Mechanical Dimensions TO-263 2L (D2PAK) Figure 16. 2LD,TO263, Surface Mount Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. 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