FQPF9P25YDTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQPF9P25YDTU P-Channel QFET® MOSFET -250 V, -6 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • -6 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -3 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested S G D G TO-220F Y-formed S D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. FQPF9P25YDTU -250 Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD TJ, TSTG TL - Pulsed (Note 1) Unit V -6.0 A -3.9 A -24 A ± 30 V (Note 2) 650 mJ Avalanche Current (Note 1) -6.0 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 5.0 -5.5 50 0.4 -55 to +150 mJ V/ns W W/°C °C 300 °C FQPF9P25YDTU  6? (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8” from case for 5 seconds. Thermal Characteristics  +θ Thermal Resistance, Junction-to-Case, Max.    +θ Thermal Resistance, Junction-to-Ambient, Max. ©2014 Fairchild Semiconductor Corporation FQPF9P25 YDTU Rev. C0 1 2.5 -' & 6? www.fairchildsemi.com FQPF9P25 YDTU — P-Channel QFET® MOSFET December 2014 Part Number Top Mark FQPF9P25 YDTU FQPF9P25 Electrical Characteristics Symbol Package TO-220F (Y-formed) Packing Method Reel Size Tape Width Quantity Tube N/A N/A 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit -250 -- -- V -- -0.2 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -250 V, VGS = 0 V -- -- -1 µA VDS = -200 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -3.0 A -- 0.48 0.62 Ω gFS Forward Transconductance VDS = -40 V, ID = -3.0 A -- 4.8 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 910 1180 pF -- 170 220 pF -- 27 35 pF ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -125 V, ID = -9.4 A, RG = 25 Ω (Note 4) VDS = -200 V, ID = -9.4 A, VGS = -10 V (Note 4) -- 20 50 -- 150 310 ns -- 45 100 ns -- 65 140 ns -- 29 38 nC -- 7.6 -- nC -- 14 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -6.0 ISM -- -- -24 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -6.0 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -9.4 A, dIF / dt = 100 A/µs -- 190 -- ns -- 1.45 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 28.9 mH, IAS = -6.0 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -9.4 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2014 Fairchild Semiconductor Corporation FQPF9P25 YDTU Rev. C0 2 www.fairchildsemi.com FQPF9P25 YDTU — P-Channel QFET® MOSFET Package Marking and Ordering Information VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top : -I D, Drain Current [A] 10 1 10 -I D , Drain Current [A] 1 0 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 150℃ 0 10 25℃ ※ Notes : 1. VDS = -50V 2. 250μs Pulse Test -55℃ -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.0 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 1 10 VGS = - 10V 1.5 VGS = - 20V 1.0 0.5 ※ Note : TJ = 25℃ 0 10 150℃ -1 0.0 0 10 20 30 10 40 0.0 0.5 -ID , Drain Current [A] 1.0 1.5 2.0 2.5 3.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 2400 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = -50V 10 -V GS , Gate-Source Voltage [V] 2000 1600 Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Coss 1200 800 Crss 400 0 -1 10 VDS = -125V VDS = -200V 8 6 4 2 ※ Note : ID = -9.4 A 0 0 10 0 1 10 Figure 5. Capacitance Characteristics ©2014 Fairchild Semiconductor Corporation FQPF9P25 YDTU Rev. C0 5 10 15 20 25 30 35 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQPF9P25 YDTU — P-Channel QFET® MOSFET Typical Characteristics 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -4.7 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 6 2 10 Operation in This Area is Limited by R DS(on) 5 1 ms 1 100 µs 10 ms -I D, Drain Current [A] -I D, Drain Current [A] 10 100 ms DC 0 10 -1 ※ Notes : 10 o 1. TC = 25 C 4 3 2 1 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 0 25 2 10 10 50 ZJC(t), Thermal Response [oC/W] Figure 9. Maximum Safe Operating Area 10 75 100 125 150 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 0 0 .2 ※ N o te s : 1 . Z θ J C ( t ) = 2 . 5 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2014 Fairchild Semiconductor Corporation FQPF9P25 YDTU Rev. C0 4 www.fairchildsemi.com FQPF9P25 YDTU — P-Channel QFET® MOSFET  !   



   FQPF9P25 YDTU — P-Channel QFET® MOSFET 200nF 200nF 12V VGS Same T Same Ty ype as DUT DUT 50KΩ 50K Ω Qg 300nF 300nF VDS VGS Qgs Qgd DUT DUT IG = const. Charg Ch arge e Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on d( on)) VDD VGS VGS t of offf tr td(of d( offf) tf 10 10% % DUT VGS VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDS DSS S 1 -----------------------------EAS = ---- L IAS2 ------2 BVDS DSS S - VDD L tp ID RG VGS Tim Ti me VDD VDD VDS (t) (t)) ID (t DUT DUT IAS BVDSS tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FQPF9P25 YDTU Rev. C0 5 www.fairchildsemi.com VDS DUT _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Compliment of DUT Comp (N-C (N-Channel hannel)) VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod Gate Pul ulsse W idth D = -------------------------Gate te Pu Ga Pullse Per Period 10 10V V Body Bo dy Diod ode e Reverse Curren entt IRM di//dt di IFM , Bo Body dy Diod ode e For orw ward Curren entt VDS ( DUT ) VSD Body Bo dy Diode Forw For ward Vol olttag age e Drop Drop VDD Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FQPF9P25 YDTU Rev. C0 6 www.fairchildsemi.com FQPF9P25 YDTU — P-Channel QFET® MOSFET + A B 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 6.88 6.48 1 X 45° B 16.00 15.60 1 R0.30 3 2.96 2.56 R0.30 1.47 1.24 10.45 9.45 B 2.14 16.07 15.67 B 10.00 9.00 0.90 0.70 0.50 M 2.54 A B 2.54 B 4.00 MIN B B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. DRAWING FILE NAME: TO220Q03REV2 0.60 0.45 6.00 4.00 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com